Photomicrosensor (Transmissive) EE-SH3 Series ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing Four, R1 aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. • Solder terminal models: EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS • PCB terminal models: EE-SH3-B/-SH3-C/-SH3-D/-SH3-G • RoHS Compliant. Two, C1.5 6.2 19±0.15 25.4 Two, 3.2±0.2 dia. holes Matted Solder terminal Cross section AA Center mark 3.4±0.2 PCB terminal Cross section AA ■ Absolute Maximum Ratings (Ta = 25°C) Item Emitter 10.2 7.2±0.2 7.2±0.2 Detector Four, 0.25 2.54±0.2 7.6±0.3 Model Internal Circuit K Aperture (a x b) EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Symbol Forward current IF Rated value 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Ambient tem- Operating perature Storage Topr –25°C to 85°C Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 3) C Unless otherwise specified, the tolerances are as shown below. A E Terminal No. Name A Anode K C E Cathode Collector Emitter Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. ±0.2 3 < mm ≤ 6 ±0.24 6 < mm ≤ 10 ±0.29 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 ■ Ordering Information Description Photomicrosensor (transmissive) Aperture (a x b) Model 2.1 x 0.5 EE-SH3(-B) 2.1 x 1.0 EE-SH3-C(S) 2.1 x 0.2 EE-SH3-D(S) 0.5 x 2.1 EE-SH3-G(S) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value EE-SH3(-B) Emitter Detector EE-SH3-C(S) Condition EE-SH3-D(S) EE-SH3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. Light current IL 0.5 to 14 mA typ. 1 to 28 mA typ. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA Rising time tr 4 μs typ. Falling time tf 4 μs typ. IF = 20 mA 0.1 mA min. --- Photomicrosensor (Transmissive) 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA EE-SH3 Series 169 ■ Engineering Data IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Collector−Emitter voltage VCE (V) VCC = 5 V Ta = 25°C IF = 20 mA VCE = 10 V Ta = 25°C − d 0 + Center of optical axis Light current IL (mA) IF = 20 mA VCE = 10 V Ta = 25°C Center of optical axis Sensing Position Characteristics (EE-SH3-C(S)) Distance d (mm) 170 Dark Current vs. Ambient Temperature Characteristics (Typical) Photomicrosensor (Transmissive) IF = 20 mA VCE = 10 V Ta = 25°C VCE = 10 V 0 lx Ambient temperature Ta (°C) Sensing Position Characteristics (EE-SH3(-B)) Distance d (mm) Relative light current IL (%) Relative light current IL (%) Sensing Position Characteristics (EE-SH3-G(S)) IF = 20 mA VCE = 5 V Sensing Position Characteristics (EE-SH3-D(S)) Load resistance RL (kΩ) Ta = 25°C VCE = 10 V Forward current IF (mA) Ambient temperature Ta (°C) Relative light current IL (%) Response time tr, tf (μs) Response Time vs. Load Resistance Characteristics (Typical) Ta = 70°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light current IL (mA) Ta = 25°C Ta = 25°C Forward voltage VF (V) Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Voltage Characteristics (EE-SH3(-B)) Ta = −30°C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C Relative light current IL (%) IF Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Center of optical axis Distance d (mm) Response Time Measurement Circuit Input Center of optical axis Output 90 % 10 % Input Output Distance d (mm) EE-SH3 Series MEMO Photomicrosensor (Transmissive) EE-SH3 Series All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527. OMRON ON-LINE OMRON ELECTRONIC COMPONENTS LLC Global - http://www.omron.com USA - http://www.components.omron.com 55 E. Commerce Drive, Suite B Schaumburg, IL 60173 847-882-2288 Cat. No. X305-E-1 10/10 Specifications subject to change without notice Photomicrosensor (Transmissive) EE-SH3 Series Printed in USA