2SA1768 Ordering number : EN3582A SANYO Semiconductors DATA SHEET 2SA1768 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons • Color TV sound output, converter, inverter Features • • • Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings --180 V --160 V VEBO IC --6 V --0.7 A ICP PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg °C • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2SA1768S-AN 2SA1768T-AN 1.05 Marking(NMP(Taping)) 1.0 A1768 1.0 4.5 W °C Product & Package Information 2.5 A 1 150 unit : mm (typ) 7540-001 1.45 --1.5 --55 to +150 Package Dimensions 6.9 Unit VCBO VCEO RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2 3 Electrical Connection 0.45 2 2.54 2.54 1 : Emitter 2 : Collector 3 : Base 3 SANYO : NMP(Taping) 1 http://www.sanyosemi.com/en/network/ 82212 TKIM TC-00002804/90503TN (KT)/83098HA (KT)/5110MO, TS No.3582-1/7 2SA1768 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=--120V, IE=0A VEB=--4V, IC=0A hFE1 VCE=--5V, IC=--100mA VCE=--5V, IC=--10mA hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Conditions Ratings min typ max 140* Unit --0.1 μA --0.1 μA 400* 90 VCE=--10V, IC=--50mA 120 VCB=--10V, f=1MHz MHz 11 VCE(sat) VBE(sat) IC=--250mA, IB=--25mA V(BR)CBO V(BR)CEO IC=--10μA, IE=0A IC=--1mA, RBE=∞ V(BR)EBO ton IE=--10μA, IC=0A tstg tf See specified Test Circuit. pF --0.2 --0.5 --0.85 --1.2 V V --180 V --160 V --6 V 60 ns 900 ns 60 ns * : The 2SA1768 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1768 IB1 IB2 PW=20μs D.C.≤1% OUTPUT INPUT VR RB + 50Ω 100μF VBE=5V RL + 470μF VCC= --100V IC=20IB1= --20IB2= --300mA Ordering Information Package Shipping 2SA1768S-AN Device NMP(Taping) 2,500pcs./box 2SA1768T-AN NMP(Taping) 2,500pcs./box memo Pb Free No.3582-2/7 2SA1768 IC -- VCE --500 --700 Collector Current, IC -- mA Collector Current, IC -- mA --600 A --120m A --100m --80mA --60mA --40mA --400 --20mA --300 --200 --100 mA --4.5 mA --4.0 mA --3.5 mA --3.0 --2.5mA 0m A From top --200mA --180mA --160mA --140mA --700 IC -- VCE --800 --600 --5 . --800 --500 --400 --2.0mA --300 --1.5mA --1.0mA --200 --0.5mA --100 IB=0 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV 0 --10 --20 --40 --50 --60 --70 --80 IT04538 hFE -- IC 5 VCE=--5V VCE=--5V Ta=75°C 3 2 DC Current Gain, hFE --800 --600 --400 Ta= 75° 25°C C --25°C Collector Current, IC -- mA --30 Collector-to-Emitter Voltage, VCE -- V IT04536 IC -- VBE --1000 IB=0 0 --1000 --200 100 --25°C 25°C 7 5 3 2 10 7 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 2 3 5 7 --10 3 5 7 --100 2 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 7--1000 IT04542 VCE(sat) -- IC 2 3 2 Collector Current, IC -- mA IT04540 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 5 --1.0 --1.2 IC / IB=10 --1000 2 VCE=--10V --5V 100 7 5 3 2 7 5 3 2 °C 25 --100 Ta=75°C 7 5 --25°C 3 10 5 7 --10 2 3 5 7 --100 2 3 5 Collector Current, IC -- mA 3 2 --1.0 Ta=--25°C 7 75°C 5 25°C 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT04546 Cob -- VCB f=1MHz 7 Output Capacitance, Cob -- pF 5 3 100 IC / IB=10 7 2 Collector Current, IC -- mA VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 7 --1000 IT04544 5 3 2 10 7 5 3 2 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT04548 1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 IT04550 Collector-to-Base Voltage, VCB -- V No.3582-3/7 2SA1768 --1.0 7 5 ASO ICP= --1.5A IC= --0.7A 10 0m 10 1m m s s s 3 2 DC --0.1 7 5 op era tio n 3 2 --0.01 7 5 PC -- Ta 1.2 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 Ta=25°C Single Pulse 3 --1.0 2 3 1.0 0.8 0.6 0.4 0.2 0 5 7 --10 2 3 5 7 --100 Collector-to-Emitter Voltage, VCE -- V 2 3 IT04551 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04552 No.3582-4/7 2SA1768 Bag Packing Specification 2SA1768S-AN, 2SA1768T-AN No.3582-5/7 2SA1768 Outline Drawing 2SA1768S-AN, 2SA1768T-AN Mass (g) Unit 0.275 mm * For reference No.3582-6/7 2SA1768 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.3582-7/7