SAMSUNG K4S640832K

K4S640832K
K4S641632K
Synchronous DRAM
64Mb K-die SDRAM Specification
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
Revision History
Revision
Month
Year
History
0.0
January
2005
- Target spec release
0.1
March
2005
- Change DC current
0.2
April
2005
- Delete bit organization for x4
0.3
July
2005
- Delete 7ns speed bin
1.0
September
2005
- Final spec release
1.1
February
2006
- Added 5ns speed bin for x16
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
2M x 8Bit x 4Banks / 1M x 16Bit x 4Banks SDRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
GENERAL DESCRIPTION
The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8
bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows
precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies,
programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information
Part No.
Orgainization
Max Freq.
K4S640832K-T(U)C/L75
8Mb x 8
133MHz(CL=3)
K4S641632K-T(U)C/L50
200MHz(CL=3)
4Mb x 16
K4S641632K-T(U)C/L60
K4S641632K-T(U)C/L75
166MHz(CL=3)
Interface
Package
LVTTL
54pin TSOP(II)
Pb (Pb-free)
133MHz(CL=3)
Organization
Row Address
Column Address
8Mx8
A0~A11
A0-A8
4Mx16
A0~A11
A0-A7
Row & Column address configuration
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
Package Physical Dimension
0~8°C
#1
#27
10.16
0.400
0.125+0.075
-0.035
0.005+0.003
-0.001
22.62
MAX
0.891
22.22
0.875
0.10
MAX
0.004
(
0.71
)
0.028
+0.10
± 0.10
0.30 -0.05
0.012 +0.004
-0.002
0.21
0.008
± 0.004
± 0.05
± 0.002
1.00
0.039
0.80
0.0315
± 0.10
± 0.004
( 0.50 )
0.020
#28
11.76±0.20
0.463±0.008
#54
0.45~0.75
0.018~0.030
0.25
TYP
0.010
1.20
MAX
0.047
0.05
MIN
0.002
54Pin TSOP(II) Package Dimension
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
FUNCTIONAL BLOCK DIAGRAM
I/O Control
Data Input Register
LWE
LDQM
Bank Select
2M x 8 / 1M x 16
2M x 8 / 1M x 16
Output Buffer
2M x 8 / 1M x 16
Sense AMP
Row Decoder
ADD
Row Buffer
Refresh Counter
DQi
Column Decoder
Col. Buffer
LCBR
LRAS
Address Register
CLK
2M x 8 / 1M x 16
Latency & Burst Length
LCKE
Programming Register
LRAS
LCBR
LCAS
LWE
LWCBR
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
5 of 14
Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
PIN CONFIGURATION (Top view)
x8
x16
VDD
VDD
DQ0
DQ0
VDDQ
VDDQ
DQ1
N.C
DQ2
DQ1
VSSQ
VSSQ
DQ3
N.C
DQ4
DQ2
VDDQ
VDDQ
DQ5
N.C
DQ6
DQ3
VSSQ
VSSQ
DQ7
N.C
VDD
VDD
LDQM
N.C
WE
WE
CAS
CAS
RAS
RAS
CS
CS
BA0
BA0
BA1
BA1
A10/AP A10/AP
A0
A0
A1
A1
A2
A2
A3
A3
VDD
VDD
x8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
x16
VSS
DQ7
VSSQ
N.C
DQ6
VDDQ
N.C
DQ5
VSSQ
N.C
DQ4
VDDQ
N.C
VSS
N.C/RFU
DQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11,
Column address : (x8 : CA0 ~ CA8 , x16 : CA0 ~ CA7)
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM
Data input/output mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
DQ0 ~ N
Data input/output
Data inputs/outputs are multiplexed on the same pins.
(x8 : DQ0 ~ 7), (x16 : DQ0 ~ 15)
VDD/VSS
Power supply/ground
Power and ground for the input buffers and the core logic.
VDDQ/VSSQ
Data output power/ground
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
N.C/RFU
No connection
/reserved for future use
This pin is recommended to be left No Connection on the device.
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Storage temperature
Note : Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDD+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
ILI
-10
-
10
uA
3
Supply voltage
Input leakage current
Note
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Symbol
Min
Max
Unit
CCLK
2.5
4.0
pF
CIN
2.5
5.0
pF
Address
CADD
2.5
5.0
pF
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~DQ15)
COUT
4.0
6.5
pF
Clock
RAS, CAS, WE, CS, CKE, DQM
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Note
Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
DC CHARACTERISTICS (x8)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x8)
Parameter
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Symbol
Version
Test Condition
75
Unit
Note
1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
55
mA
CKE ≤ VIL(max), tCC = 10ns
1
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
1
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
CKE ≤ VIL(max), tCC = 10ns
3
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
3
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
25
80
mA
1
85
mA
2
C
1
mA
3
L
400
uA
4
ICC1
ICC2P
ICC2NS
ICC3P
ICC3NS
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh current
ICC5
tRC ≥ tRC(min)
Self refresh current
ICC6
CKE ≤ 0.2V
mA
mA
mA
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640832K-T(U)C
4. K4S640832K-T(U)L
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x16 only)
Parameter
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Symbol
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
60
75
80
70
55
CKE ≤ VIL(max), tCC = 10ns
1
1
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
CKE ≤ VIL(max), tCC = 10ns
3
CKE & CLK ≤ VIL(max), tCC = ∞
3
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
25
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh current
ICC5
tRC ≥ tRC(min)
ICC6
50
CKE & CLK ≤ VIL(max), tCC = ∞
Operating current
(Burst mode)
Self refresh current
Version
Test Condition
CKE ≤ 0.2V
Unit
Note
mA
1
mA
mA
mA
mA
110
100
85
mA
1
110
100
85
mA
2
C
1
mA
3
L
400
uA
4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632K-T(U)C
4. K4S641632K-T(U)L
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
Unit
2.4/0.4
V
1.4
V
tr/tf = 1/1
ns
1.4
V
See Fig. 2
3.3V
Vtt = 1.4V
1200Ω
50Ω
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
870Ω
Output
Z0 = 50Ω
30pF
30pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
50
60
75
Unit
Note
Row active to row active delay
tRRD(min)
10
12
15
ns
1
RAS to CAS delay
tRCD(min)
15
18
20
ns
1
tRP(min)
15
18
20
ns
1
tRAS(min)
40
42
45
ns
1
Row precharge time
Row active time
tRAS(max)
100
Row cycle time
tRC(min)
55
60
Last data in to row precharge
tRDL(min)
2
us
65
ns
1, 6
CLK
2,5,6
Last data in to Active delay
tDAL(min)
2 CLK + tRP
-
5
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
ea
4
Number of valid output data
CAS latency = 3
2
CAS latency = 2
1
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
6. tRC =tRFC, tRDL = tWR.
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
Output data
hold time
Symbol
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
tCC
tSAC
tOH
50
Min
60
Max
5
1000
-
Min
75
Max
6
1000
10
Min
Max
7.5
1000
10
-
4.5
-
5
-
5.4
-
-
-
6
-
6
2
-
2.5
-
3
-
-
-
3
-
3
-
Unit
Note
ns
1
ns
1,2
ns
2
CLK high pulse width
tCH
2
-
2.5
-
2.5
-
ns
3
CLK low pulse width
tCL
2
-
2.5
-
2.5
-
ns
3
Input setup time
tSS
1.5
-
1.5
-
1.5
-
ns
3, 4
Input hold time
tSH
1
-
1
-
0.8
-
ns
3, 4
CLK to output in Low-Z
tSLZ
1
-
1
-
1
-
ns
2
-
4.5
-
5
-
5.4
-
-
-
6
-
6
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
ns
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
4. tSS applies for address setup time, clock enable setup time, commend setup time and data setup time
tSH applies for address holde time, clock enable hold time, commend hold time and data hold time
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
Output fall time
tfh
Output rise time
Output fall time
Typ
Max
Unit
Notes
1.37
4.37
Volts/ns
3
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
Notes : 1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
IBIS SPECIFICATION
200MHz/133MHz Pull-up
0
IOH Characteristics (Pull-up)
(V)
3.45
3.30
3.00
2.70
2.50
1.95
1.80
1.65
1.50
1.40
1.00
0.20
200MHz/133MHz 200MHz/133MHz
Min
Max
I (mA)
I (mA)
-1.68
-19.11
-0.35
-51.87
-3.75
-90.44
-6.65
-107.31
-13.75
-137.9
-17.75
-158.34
-20.55
-173.6
-23.55
-188.79
-26.2
-199.01
-36.25
-241.15
-46.5
-351.68
1
1.5
2
2.5
3
3.5
3
3.5
-100
-200
mA
Voltage
0.5
0
-300
-400
-500
-600
Voltage
IOH Min (200MHz / 133MHz)
IOH Max (200MHz / 133MHz)
200MHz/133MHz Pull-down
IOL Characteristics (Pull-down)
(V)
3.45
3.30
3.00
1.95
1.80
1.65
1.50
1.40
1.00
0.85
0.65
0.40
200MHz/133MHz 200MHz/133MHz
Min
Max
I (mA)
I (mA)
43.92
155.82
43.36
153.72
41.20
148.40
40.56
146.02
39.60
141.75
38.40
136.08
37.28
131.39
30.08
105.84
26.64
93.66
21.52
75.25
14.16
49.14
250
200
150
mA
Voltage
100
50
0
0
0.5
1
1.5
2
2.5
Voltage
IOL Min (200MHz / 133MHz)
IOL Max (200MHz / 133MHz)
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K4S641632K
Synchronous DRAM
Minimum VDD clamp current
(Referenced to VDD)
VDD Clamp @ CLK, CKE, CS, DQM & DQ
I (mA)
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.23
1.34
3.02
5.06
7.35
9.83
12.48
15.30
18.31
20
15
mA
VDD (V)
0.0
0.2
0.4
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
10
5
0
0
1
2
3
Voltage
I (mA)
Minimum VSS clamp current
VSS Clamp @ CLK, CKE, CS, DQM & DQ
I (mA)
-57.23
-45.77
-38.26
-31.22
-24.58
-18.37
-12.56
-7.57
-3.37
-1.75
-0.58
-0.05
0.0
0.0
0.0
0.0
-3
-2
-1
0
0
-10
-20
mA
VSS (V)
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.9
-0.8
-0.7
-0.6
-0.4
-0.2
0.0
-30
-40
-50
-60
Voltage
I (mA)
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Rev. 1.1 February 2006
K4S640832K
K4S641632K
Synchronous DRAM
SIMPLIFIED TRUTH TABLE
Command
Register
Mode register set
Auto refresh
Refresh
Self
refresh
Entry
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
H
X
L
L
L
L
X
OP code
L
L
L
H
X
X
X
X
H
H
L
L
H
H
H
X
X
X
X
L
L
H
H
X
V
X
L
H
L
H
X
V
H
Bank active & row addr.
H
Read &
column address
H
Auto precharge disable
Auto precharge enable
Auto precharge disable
H
X
L
H
L
L
X
H
X
L
H
H
L
X
H
X
L
L
H
L
X
Entry
H
L
H
X
X
X
L
V
V
V
Exit
L
H
Auto precharge enable
Burst stop
Precharge
Bank selection
All banks
Clock suspend or
active power down
Entry
H
L
Precharge power down mode
Exit
L
DQM
H
No operation command
H
BA0,1
H
L
Write &
column address
Exit
(V=Valid, X=Don′t care, H=Logic high, L=Logic low)
H
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
H
X
X
X
L
H
H
H
X
V
A10/AP
A11,
A9 ~ A0
Note
1,2
3
3
3
3
Row address
L
Column
address
H
L
Column
address
H
X
V
L
X
H
4
4,5
4
4,5
6
X
X
X
X
X
X
V
X
X
X
7
Notes : 1. OP Code : Operand code
A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
14 of 14
Rev. 1.1 February 2006