STMICROELECTRONICS M25P40

M25P10
1 Mbit, Low Voltage, Serial Flash Memory
With 20 MHz SPI Bus Interface
FEATURES SUMMARY
■ 1 Mbit of Flash Memory
■
Page Program (up to 128 Bytes) in 3 ms
(typical)
■
Sector Erase (256 Kbit) in 1 s (typical)
■
Bulk Erase (1 Mbit) in 2 s (typical)
■
2.7 V to 3.6 V Single Supply Voltage
■
SPI Bus Compatible Serial Interface
■
20 MHz Clock Rate (maximum)
■
Deep Power-down Mode 1 µA (typical)
■
Electronic Signature
■
More than 100,000 Erase/Program Cycles per
Sector
■
More than 20 Year Data Retention
September 2001
Figure 1. Packages
8
1
SO8 (MN)
150 mil width
1/32
M25P10
SUMMARY DESCRIPTION
The M25P10 is a 1 Mbit (128K x 8) Serial Flash
Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible
bus.
The memory can be programmed 1 to 128 bytes at
a time, using the Page Program instruction.
The memory is organized as 4 sectors, each containing 256 pages. Each page is 128 bytes wide.
Thus, the whole memory can be viewed as consisting of 1024 pages, or 131,072 bytes.
The whole memory can be erased using the Bulk
Erase instruction, or a sector at a time, using the
Sector Erase instruction.
Figure 3. SO Connections
M25P10
S
Q
W
VSS
1
2
3
4
8
7
6
5
AI03745
Figure 2. Logic Diagram
VCC
D
Q
C
S
M25P10
W
HOLD
VSS
AI03744
Table 1. Signal Names
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
S
Chip Select
W
Write Protect
HOLD
Hold
VCC
Supply Voltage
VSS
Ground
2/32
VCC
HOLD
C
D
M25P10
SIGNAL DESCRIPTION
Serial Data Output (Q). This output signal is
used to transfer data serially out of the device.
Data is shifted out on the falling edge of Serial
Clock (C).
Serial Data Input (D). This input signal is used to
transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of
Serial Clock (C).
Serial Clock (C). This input signal provides the
timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are
latched on the rising edge of Serial Clock (C). Data
on Serial Data Output (Q) changes after the falling
edge of Serial Clock (C).
Chip Select (S). When this input signal is High,
the device is deselected and Serial Data Output
(Q) is at high impedance. Unless an internal Program, Erase or Write Status Register cycle is in
progress, the device will be in the Standby mode
(this is not the Deep Power-down mode). Driving
Chip Select (S) Low enables the device, placing it
in the active power mode.
After Power-up, a falling edge on Chip Select (S)
is required prior to the start of any instruction.
Hold (HOLD). The Hold (HOLD) signal is used to
pause any serial communications with the device
without deselecting the device.
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.
Write Protect (W). The main purpose of this input signal is to freeze the size of the area of memory that is protected against program or erase
instructions (as specified by the values in the BP1
and BP0 bits of the Status Register).
3/32
M25P10
SPI MODES
These devices can be driven by a microcontroller
with its SPI peripheral running in either of the two
following modes:
– CPOL=0, CPHA=0
– CPOL=1, CPHA=1
For these two modes, input data is latched in on
the rising edge of Serial Clock (C), and output data
is available from the falling edge of Serial Clock
(C).
The difference between the two modes, as shown
in Figure 5, is the clock polarity when the bus master is in Stand-by mode and not transferring data:
– C remains at 0 for (CPOL=0, CPHA=0)
– C remains at 1 for (CPOL=1, CPHA=1)
Figure 4. Bus Master and Memory Devices on the SPI Bus
SDO
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
C Q D
C Q D
C Q D
SPI Memory
Device
SPI Memory
Device
SPI Memory
Device
Bus Master
(ST6, ST7, ST9,
ST10, Others)
CS3
CS2
CS1
S
W
HOLD
S
W
HOLD
S
W
HOLD
AI03746C
Note: 1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate.
Figure 5. SPI Modes Supported
CPOL
CPHA
0
0
C
1
1
C
D or Q
MSB
LSB
AI01438
4/32
M25P10
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,
and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the
internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP)
instruction allows up to 128 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the
same page of memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to
be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all
1s (FFh). This can be achieved either a sector at a
time, using the Sector Erase (SE) instruction, or
throughout the entire memory, using the Bulk
Erase (BE) instruction.
Polling During a Program Cycle or Erase Cycle
A further improvement in the programming time or
erase time can be achieved by not waiting for the
worst case delay (t W, tPP, tSE, or tBE). The Write In
Progress (WIP) bit is provided in the Status Register so that the application program can monitor its
value, polling it to establish when the previous Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is enabled, and in the Active Power mode.
When Chip Select (S) is High, the device is disabled, but could remain in the Active Power mode
until all internal cycles have completed (Program,
Erase, Write Status Register). The device then
goes in to the Stand-by Power mode. The device
consumption drops to I CC1.
The Deep Power-down mode is entered when the
specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device
consumption drops further to ICC2. The device remains in this mode until another specific instruction (the Release from Deep Power-down Mode
and Read Electronic Signature (RES) instruction)
is executed.
All other instructions are ignored while the device
is in the Deep Power-down mode. This can be
used as an extra software protection mechanism,
when the device is not in active use, to protect the
device from inadvertant Write, Program or Erase
instructions.
Status Register
The Status Register contains a number of status
and control bits, as shown in Table 5, that can be
read or set (as appropriate) by specific instructions.
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected against Program and Erase
instructions.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits
of the Status Register (SRWD, BP1, BP0) become
read-only bits.
5/32
M25P10
Table 2. Protected Area Sizes
Status Register
Content
Memory Content
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
none
All sectors1 (four sectors: 0, 1, 2 and 3)
0
1
Upper quarter (Sector 3)
Lower three-quarters (three sectors: 0 to 2)
1
0
Upper half (two sectors: 2 and 3)
Lower half (two sectors: 0 and 1)
1
1
All sectors (four sectors: 0, 1, 2 and 3)
none
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) are 0.
Protection Modes
The environments where non-volatile memory devices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P10 boasts the
following data protection mechanisms:
■ Power-On Reset and an internal timer (tPUW)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
■
■
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
All instructions that modify data must be
preceded by a Write Enable (WREN) instruction
to set the Write Enable Latch (WEL) bit . This bit
is returned to its reset state by the following
events:
– Power-up
– Write Status Register (WRSR) instruction
completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
■
The Block Protect (BP1, BP0) bits allow part of
the memory to be configured as read-only. This
is the Software Protected Mode (SPM).
■
The Write Protect (W) signal allows the Block
Protect (BP1, BP0) bits and Status Register
Write Disable (SRWD) bit to be protected. This
is the Hardware Protected Mode (HPM).
■
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Powerdown instruction).
– Write Disable (WRDI) instruction completion
Figure 6. Hold Condition Activation
C
HOLD
Active
Hold
Active
Hold
Active
AI02029C
6/32
M25P10
Hold Condition
The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this
signal Low does not terminate any Program or
Erase cycle that is currently in progress.
To enter the Hold condition, the device must be
selected, with Chip Select (S) Low.
The Hold condition starts on the falling edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low (as shown in Figure 6).
The Hold condition ends on the rising edge of the
Hold (HOLD) signal, provided that this coincides
with Serial Clock (C) being Low.
If the falling edge does not coincide with Serial
Clock (C) being Low, the Hold condition starts
when Serial Clock (C) next goes Low. Similarly, if
the rising edge does not coincide with Serial Clock
(C) being Low, the Hold condition ends when Serial Clock (C) next goes Low. (This is shown in Figure 6).
During the Hold condition, the Serial Data Output
(Q) is high impedance, and Serial Data Input (D)
and Serial Clock (C) are Don’t Care.
Normally, the device is kept selected, with Chip
Select (S) driven Low, for the whole duration of the
Hold condition.
If Chip Select (S) goes High while the device is in
the Hold condition, this has the effect of resetting
the internal logic of the device. The memory remains in the Hold condition as long as Hold
(HOLD) is Low. To restart communication with the
device, it is necessary both to drive Hold (HOLD)
High, and to drive Chip Select (S) Low.
7/32
M25P10
MEMORY ORGANIZATION
The memory is organized as:
■ 131,072 bytes (8 bits each)
Table 3. Memory Organization
Sector
■
4 sectors (256 Kbits, 32768 bytes each)
■
1024 pages (128 bytes each).
Each page can be individually programmed (bits
are programmed from 1 to 0). The device is Sector
or Bulk Erasable (bits are erased from 0 to 1) but
not Page Erasable.
Address Range
3
18000h
1FFFFh
2
10000h
17FFFh
1
08000h
0FFFFh
0
00000h
07FFFh
Figure 7. Block Diagram
HOLD
W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Status
Register
128 Byte
Data Buffer
1FFFFh
Y Decoder
18000h
Size of the
read-only
memory area
10000h
08000h
0007Fh
00000h
128 Bytes (Page Size)
X Decoder
AI03747C
8/32
M25P10
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4.
Depending on the instruction, the one-byte instruction code is followed by address bytes, or by
data bytes, or by both or none. Chip Select (S)
must be driven High after the last bit of the instruction sequence has been shifted in.
At the end of a Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) or Write Status Register
(WRSR) instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the
instruction is rejected, and is not executed. That is,
Chip Select (S) must driven High when the number
of clock pulses after Chip Select (S) being driven
Low is an exact multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or
Erase cycle are ignored, and the internal Write
Status Register cycle, Program cycle or Erase cycle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-byte Instruction Code
WREN
Write Enable
0000 0110
WRDI
Write Disable
0000 0100
RDSR
Read Status Register
0000 0101
WRSR
Write Status Register
0000 0001
READ
Read Data Bytes
0000 0011
PP
Page Program
0000 0010
SE
Sector Erase
1101 1000
BE
Bulk Erase
1100 0111
DP
Deep Power-down
1011 1001
Release from Deep Power-down, and Read Electronic Signature
1010 1011
RES
9/32
M25P10
Figure 8. Write Enable (WREN) Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281D
(SE), Bulk Erase (BE) and Write Status Register
(WRSR) instruction.
The Write Enable (WREN) instruction is entered
by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S)
High.
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 8)
sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase
Figure 9. Write Disable (WRDI) Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750C
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9)
resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by
driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under
the following conditions:
10/32
– Power-up
– Write Disable (WRDI) instruction completion
– Write Status Register (WRSR) instruction completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
M25P10
Figure 10. Read Status Register (RDSR) Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
6
5
MSB
4
3
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031C
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a
Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress,
it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the
device. It is also possible to read the Status Register continuously, as shown in Figure 10.
Table 5. Status Register Format
b7
SRWD
b0
0
0
0
BP1
BP0
WEL
WIP
Note: SRWD, BP1 and BP0 are non-volatile read and write bits.
2. WEL and WIP are volatile read-only bits (WEL is set and
reset by specific instructions; WIP is automatically set
and reset by the internal logic of the device).
The status and control bits of the Status Register
are as follows:
WIP bit. The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1,
such a cycle is in progress, when reset to 0 no
such cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is
set, when set to 0 the internal Write Enable Latch
is reset and no Write Status Register, Program or
Erase instruction is accepted.
BP1, BP0 bits. The Block Protect (BP1, BP0) bits
are non-volatile. They define the size of the area to
be software protected against Program and Erase
instructions. These bits are written with the Write
Status Register (WRSR) instruction. When one or
both of the Block Protect (BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table
2) becomes protected against Page Program (PP)
and Sector Erase (SE) instructions. The Block
Protect (BP1, BP0) bits can be written provided
that the Hardware Protected mode has not been
set. The Bulk Erase (BE) instruction is executed if,
and only if, both Block Protect (BP1, BP0) bits are
0.
SRWD bit. The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode (when the Status Register Write
Disable (SRWD) bit is set to 1, and Write Protect
(W) is driven Low). In this mode, the non-volatile
bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register
(WRSR) instruction is no longer accepted for execution.
11/32
M25P10
Figure 11. Write Status Register (WRSR) Sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282C
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded and executed, the device sets
the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is
entered by driving Chip Select (S) Low, followed
by the instruction code and the data byte on Serial
Data Input (D).
The instruction sequence is shown in Figure 11.
The Write Status Register (WRSR) instruction has
no effect on b6, b5, b4, b1 and b0 of the Status
Register. b6, b5 and b4 are always read as 0.
Chip Select (S) must be driven High after the
eighth bit of the data byte has been latched in. If
not, the Write Status Register (WRSR) instruction
is not executed. As soon as Chip Select (S) is driven High, the self-timed Write Status Register cycle
12/32
(whose duration is tW) is initiated. While the Write
Status Register cycle is in progress, the Status
Register may still be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable
Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block
Protect (BP1, BP0) bits, to define the size of the
area that is to be treated as read-only, as defined
in Table 2. The Write Status Register (WRSR) instruction also allows the user to set or reset the
Status Register Write Disable (SRWD) bit in accordance with the Write Protect (W) signal. The
Status Register Write Disable (SRWD) bit and
Write Protect (W) signal allow the device to be put
in the Hardware Protected Mode (HPM). The Write
Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is
entered.
M25P10
Table 6. Protection Modes
W
Signal
SRWD
Bit
1
0
0
0
1
1
0
1
Mode
Write Protection of the
Status Register
Memory Content
Protected Area1
Unprotected Area1
Software
Protected
(SPM)
Status Register is
Writable (if the WREN
instruction has set the
WEL bit)
The values in the BP1
and BP0 bits can be
changed
Protected against Page
Program and Sector
Erase
Ready to accept Page
Program and Sector
Erase instructions
Hardware
Protected
(HPM)
Status Register is
Hardware write protected
The values in the BP1
and BP0 bits cannot be
changed
Protected against Page
Program and Sector
Erase
Ready to accept Page
Program and Sector
Erase instructions
Note: 1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 2.
The protection features of the device are summarized in Table 6.
When the Status Register Write Disable (SRWD)
bit of the Status Register is 0 (its initial delivery
state), it is possible to write to the Status Register
provided that the Write Enable Latch (WEL) bit has
previously been set by a Write Enable (WREN) instruction, regardless of the whether Write Protect
(W) is driven High or Low.
When the Status Register Write Disable (SRWD)
bit of the Status Register is set to 1, two cases
need to be considered, depending on the state of
Write Protect (W):
– If Write Protect (W) is driven High, it is possible
to write to the Status Register provided that the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
– If Write Protect (W) is driven Low, it is not possible to write to the Status Register even if the
Write Enable Latch (WEL) bit has previously
been set by a Write Enable (WREN) instruction.
(Attempts to write to the Status Register are rejected, and are not accepted for execution). As
a consequence, all the data bytes in the memory area that are software protected (SPM) by the
Block Protect (BP1, BP0) bits of the Status Register, are also hardware protected against data
modification.
Regardless of the order of the two events, the
Hardware Protected Mode (HPM) can be entered:
– by setting the Status Register Write Disable
(SRWD) bit after driving Write Protect (W) Low
– or by driving Write Protect (W) Low after setting
the Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode
(HPM) once entered is to pull Write Protect (W)
High.
If Write Protect (W) is permanently tied High, the
Hardware Protected Mode (HPM) can never be
activated, and only the Software Protected Mode
(SPM), using the Block Protect (BP1, BP0) bits of
the Status Register, can be used.
13/32
M25P10
Figure 12. Read Data Bytes (READ) Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Data Out 1
High Impedance
Q
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI03748C
Note: 1. Address bits A23 to A17 are Don’t Care.
Read Data Bytes (READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte
address (A23-A0), each bit being latched-in during
the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out
during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 12.
The first byte addressed can be at any location.
The address is automatically incremented to the
14/32
next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) instruction.
When the highest address is reached, the address
counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write Status Register
cycle is in progress, is rejected without having any
effects on the cycle that is in progress.
M25P10
Figure 13. Page Program (PP) Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
C
Instruction
24-Bit Address
23 22 21
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
MSB
MSB
1054
1055
1053
1052
1050
1051
1048
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
1049
S
1
0
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte 3
1
MSB
0
7
6
5
MSB
4
3
2
Data Byte 128
1
0
7
6
5
4
3
2
MSB
AI03749C
Note: 1. Address bits A23 to A17 are Don’t Care.
Page Program (PP)
The Page Program (PP) instruction allows bytes to
be programmed in the memory (changing bits from
1 to 0). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, three address bytes and at least
one data byte on Serial Data Input (D). If the 7
least significant address bits (A6-A0) are not all
zero, all transmitted data exceeding the addressed page boundary roll over, and are programmed from the start address of the same page
(the one whose 7 least significant address bits
(A6-A0) are all zero). Chip Select (S) must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 13.
If more than 128 bytes are sent to the device, previously latched data are discarded and the last 128
data bytes are guaranteed to be programmed correctly within the same page. If less than 128 Data
bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same
page.
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the selftimed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Page Program cycle, and is 0 when it is
completed. When the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page
which is protected by the Block Protect (BP1, BP0)
bits (see Table 2) is not executed.
15/32
M25P10
Figure 14. Sector Erase (SE) Sequence
S
0
1
2
3
4
5
6
7
8
9
29 30 31
C
Instruction
24 Bit Address
23 22
D
2
1
0
MSB
AI03751C
Note: 1. Address bits A23 to A17 are Don’t Care.
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the instruction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
16/32
The instruction sequence is shown in Figure 14.
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. When the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP1, BP0)
bits (see Table 2) is not executed.
M25P10
Figure 15. Bulk Erase (BE) Sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
AI03752C
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 15.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
tBE) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the selftimed Bulk Erase cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if
both Block Protect (BP1, BP0) bits are 0. The Bulk
Erase (BE) instruction is ignored if one, or more,
sectors are protected.
17/32
M25P10
Figure 16. Deep Power-down (DP) Sequence
S
0
1
2
3
4
5
6
7
tDP
C
Instruction
D
Stand-by Mode
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this
mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
to reduce the standby current (from I CC1 to I CC2,
as specified in Table 13).
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction. This releases
the device from this mode. The Release from
Deep Power-down and Read Electronic Signature
(RES) instruction also allows the Electronic Signa-
18/32
Deep Power-down Mode
AI03753C
ture of the device to be output on Serial Data Output (Q).
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 16.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of tDP before the
supply current is reduced to ICC2 and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that
is in progress.
M25P10
Figure 17. Release from Deep Power-down and Read Electronic Signature (RES) Sequence
S
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
C
Instruction
24-Bit Address
23 22 21
D
3
2
1
0
MSB
Electronic Signature Out
High Impedance
Q
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
Stand-by Mode
AI03755C
Release from Deep Power-down and Read
Electronic Signature (RES)
Once the device has entered the Deep Powerdown mode, all instructions are ignored except the
Release from Deep Power-down and Read Electronic Signature (RES) instruction. Executing this
instruction takes the device out of the Deep Power-down mode. The instruction can also be used to
read, on Serial Data Output (Q), the 8-bit Electronic Signature of the device.
Except while an Erase, Program or Write Status
Register cycle is in progress, the Release from
Deep Power-down and Read Electronic Signature
(RES) instruction always provides access to the
Electronic Signature of the device, and can be applied even if the Deep Power-down mode has not
been entered.
Any Release from Deep Power-down and Read
Electronic Signature (RES) instruction while an
Erase, Program or Write Status Register cycle is in
progress, is not decoded, and has no effect on the
cycle that is in progress.
This instruction serves a second purpose. The device features an 8-bit Electronic Signature, whose
value for the M25P10 is 10h. This can be read using the Release from Deep Power-down and Read
Electronic Signature (RES) instruction.
The device is first selected by driving Chip Select
(S) Low. The instruction code is followed by a
dummy 3-byte address (A23-A0), each bit being
latched-in on Serial Data Input (D) during the rising
edge of Serial Clock (C). Then, the 8-bit Electronic
Signature, stored in the memory, is shifted out on
Serial Data Output (Q), each bit being shifted out
during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 17.
The Release from Deep Power-down and Read
Electronic Signature (RES) instruction is terminated by driving Chip Select (S) High after the Electronic Signature has been read at least once.
Sending additional clock cycles on Serial Clock
(C), while Chip Select (S) is driven Low, cause the
Electronic Signature to be output repeatedly.
Once Chip Select (S) is driven High, the device is
put in the Standby mode. The device waits to be
selected, so that it can receive, decode and execute instructions.
19/32
M25P10
Figure 18. Release from Deep Power-down (RES) Sequence
S
0
1
2
3
4
5
6
7
tRES
C
Instruction
D
High Impedance
Q
Deep Power-down Mode
Stand-by Mode
AI03754C
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in Fig-
20/32
ure 18), still insures that the device is taken out of
the Deep Power-down mode, but incurs a delay
(tRES) before the device is put in Standby mode.
Chip Select (S) must remain High for at least
tRES(max), as specified in Table 14.
M25P10
POWER-UP, POWER-DOWN AND DELIVERY STATE
Moreover, the device ignores all Page Program
Power-up
(PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instructions until a
At Power-up, the device must not be selected (that
time delay of t PUW has elapsed after the moment
is Chip Select (S) must follow the voltage supplied
that VCC rises above the VWI threshold. However,
on V CC) until the supply voltage reaches
the correct operation of the device is not
VCC(min), and a further tVSL delay has elapsed.
guaranteed if, by this time, VCC is still below
To avoid data corruption and inadvertent write
VCC(min). No Write Status Register, Program or
operations during power up, a Power On Reset
Erase instructions should be sent until the later of:
(POR) circuit is included. The logic inside the
– tPUW after VCC passed the V WI threshold
device is held reset while V CC is less than the POR
threshold value, V WI – all operations are disabled,
– tVSL afterVCC passed the VCC(min) level
and the device will not respond to any instruction.
These values are specified in Table 7.
Similarly, when VCC drops from the operating
voltage, to below the POR threshold value, V WI, all
At Power-up, the device is in the following state:
operations are disabled and the device will not
respond to any instruction.
– The device is in the Standby mode (not the
Deep Power-down mode).
No instructions (including Read, Write Status
Register, Program or Erase instructions) should
– The Write Enable Latch (WEL) bit is reset.
be sent to the device until a time delay of t VSL after
VCC has risen above the VCC(min) level.
Figure 19. Power-up Timing
VCC
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
VCC(min)
tVSL
Reset State
of the
Device
Read Access allowed
Device fully
accessible
VWI
tPUW
time
AI04009B
Table 7. Power-Up Timing and VWI Threshold
Symbol
Parameter
tVSL1
VCC(min) to S low
tPUW1
Time delay to Write instruction
VWI1
Write Inhibit Voltage
Min.
Max.
10
1.5
Unit
µs
15
ms
2.5
V
Note: 1. These parameters are characterized only.
21/32
M25P10
Power-down
At Power-up and Power-down, the device must
not be selected (that is Chip Select (S) must follow
the voltage applied on VCC) until V CC reaches the
correct value:
– VCC(min) at Power-up
– VSS at Power-down
A simple pull-up resistor on Chip Select (S) can be
used to insure safe and proper Power-up and
Power-down.
22/32
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each byte contains
FFh). The Status Register contains 00h (all Status
Register bits are 0).
Table 8. Initial Status Register Format
b7
0
b0
0
0
0
0
0
0
0
M25P10
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 9. Absolute Maximum Ratings
Symbol
Parameter
TSTG
Storage Temperature
TLEAD
Lead Temperature during Soldering (20 seconds max.)1
Min.
Max.
Unit
–65
150
°C
235
°C
VIO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
VCC
Supply Voltage
–0.6
4.0
V
VESD
Electrostatic Discharge Voltage (Human Body model) 2
–2000
2000
V
Note: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)
23/32
M25P10
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parameters.
Table 10. Operating Conditions
Symbol
VCC
TA
Parameter
Min.
Max.
Unit
Supply Voltage
2.7
3.6
V
Ambient Operating Temperature
–40
85
°C
Min.
Max.
Unit
Table 11. AC Measurement Conditions
Symbol
CL
Parameter
Load Capacitance
30
Input Rise and Fall Times
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input and Output Timing Reference Voltages
0.3VCC to 0.7VCC
V
Note: 1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 20. AC Measurement I/O Waveform
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AI00825
Table 12. Capacitance
Symbol
COUT
CIN
Parameter
Output Capacitance (Q)
Input Capacitance (other pins)
Test Condition
Max.
Unit
VOUT = 0V
8
pF
VIN = 0V
6
pF
Note: Sampled only, not 100% tested, at TA=25°C and a frequency of 20 MHz.
24/32
Min.
M25P10
Table 13. DC Characteristics
Symbol
Parameter
Test Condition
(in addition to those in Table 10)
Min.
Max.
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
S = VCC, VIN = VSS or VCC
50
µA
ICC2
Deep Power-down Current
S = VCC, VIN = VSS or VCC
5
µA
ICC3
Operating Current (READ)
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
3
mA
ICC4
Operating Current (PP)
S = VCC
15
mA
ICC5
Operating Current (WRSR)
S = VCC
15
mA
ICC6
Operating Current (SE)
S = VCC
15
mA
ICC7
Operating Current (BE)
S = VCC
15
mA
VIL
Input Low Voltage
– 0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC+1
V
VOL
Output Low Voltage
IOL = 1.6 mA
0.4
V
VOH
Output High Voltage
IOH = –100 µA
VCC–0.2
V
25/32
M25P10
Table 14. AC Characteristics
Test conditions specified in Table 10 and Table 11
Symbol
Alt.
fC
fC
tSLCH
tCSS
tCHSL
Parameter
Clock Frequency
Min.
Max.
Unit
D.C.
20
MHz
S Active Setup Time (relative to C)
10
ns
S Not Active Hold Time (relative to C)
10
ns
tCH 1
tCLH
Clock High Time
22
ns
tCL 1
tCLL
Clock Low Time
22
ns
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
10
ns
tSHCH
S Not Active Setup Time (relative to C)
10
ns
50
ns
tSHSL
tCSH
S Deselect Time
tSHQZ 2
tDIS
Output Disable Time
20
ns
tCLQV
tV
Clock Low to Output Valid
20
ns
tCLQX
tHO
Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
10
ns
tCHHH
HOLD Hold Time (relative to C)
10
ns
tHHCH
HOLD Setup Time (relative to C)
10
ns
tCHHL
HOLD Hold Time (relative to C)
10
ns
tHHQX 2
tLZ
HOLD to Output Low-Z
20
ns
tHLQZ 2
tHZ
HOLD to Output High-Z
20
ns
tDP 2
S High to Deep Power-down Mode
1.6
µs
tRES 2
S High to Standby Mode
1.6
µs
tW
Write Status Register Cycle Time
5
ms
tPP
Page Program Cycle Time
5
ms
tSE
Sector Erase Cycle Time
2
s
tBE
Bulk Erase Cycle Time
4
s
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
26/32
M25P10
Figure 21. Serial Input Timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
D
Q
tCLCH
LSB IN
MSB IN
High Impedance
AI01447C
Figure 22. Hold Timing
S
tHLCH
tCHHL
tHHCH
C
tCHHH
tHLQZ
tHHQX
Q
D
HOLD
AI02032
27/32
M25P10
Figure 23. Output Timing
S
tCH
C
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
Q
tQLQH
tQHQL
D
ADDR.LSB IN
AI01449C
28/32
M25P10
PACKAGE MECHANICAL
SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width
h x 45˚
A
C
B
CP
e
D
N
E
H
1
α
A1
L
SO-a
Note: Drawing is not to scale.
SO8 narrow – 8 lead Plastic Small Outline, 150 mils body width
mm
inches
Symb.
Typ.
Min.
Max.
A
1.35
A1
Min.
Max.
1.75
0.053
0.069
0.10
0.25
0.004
0.010
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
–
–
–
–
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.40
0.90
0.016
0.035
α
0°
8°
0°
8°
N
8
e
CP
1.27
Typ.
0.050
8
0.10
0.004
29/32
M25P10
PART NUMBERING
Table 15. Ordering Information Scheme
Example:
M25P10
–
V MN
6
T
Device Type
M25P
Device Function
10 = 1 Mbit (128K x 8)
Operating Voltage
V = VCC = 2.7 to 3.6V
Package
MN = SO8 (150 mil width)
Temperature Range
6 = –40 to 85 °C
Option
T = Tape & Reel Packing
For a list of available options (speed, package,
etc.) or for further information on any aspect of this
30/32
device, please contact your nearest ST Sales Office.
M25P10
REVISION HISTORY
Table 16. Document Revision History
Date
Rev.
Description of Revision
24-Feb-2000
1.0
Document reformatted in preparation for full release; no parameters changed except data
retention, which has been changed to 20 years.
30-May-2000
1.1
Title changed from “Paged Non-Volatile Memory” to “Paged Flash Memory”
09-Feb-2001
2.0
Document restructured: no parameters changed
26-Mar-2001
2.1
Correction to descriptions on Hold condition and Power up: no parameters changed
13-Apr-2001
2.2
Descriptions made more precise: no behaviour or parameters changed
25-May-2001
2.3
Serial Paged Flash Memory renamed as Serial Flash Memory
29-Jun-2001
2.4
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Release from
Power-down and Read Electronic Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their contents
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL
11-Sep-2001
2.5
Changes to text: Protection modes; Power-up timing illustration; SO8W package removed
31/32
M25P10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2001 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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32/32