APT10M25SVR 75A 0.025Ω 100V POWER MOS V ® D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested • Lower Leakage • Surface Mount D3PAK Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10M25SVR UNIT 100 Volts Drain-Source Voltage Continuous Drain Current @ T C = 25°C 1 5 75 5 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ T C = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 300 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 5 75 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 100 Volts 75 Amps On State Drain Current 2 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.025 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (V DS = VGS , ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-802 8 FAX: (541) 388-036 4 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5518 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT10M25SVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 4300 5160 Coss Output Capacitance VDS = 25V 1600 2240 Reverse Transfer Capacitance f = 1 MHz 650 975 Crss Qg 3 Total Gate Charge Qgs VGS = 10V 150 225 VDD = 0.5 VDSS 28 42 ID = 0.5 ID[Cont.] @ 25°C 75 115 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 13 26 VDD = 0.5 VDSS 22 44 ID = ID[Cont.] @ 25°C 40 60 RG = 1.6Ω 10 20 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Continuous Source Current 5 MIN 75 (Body Diode) UNIT Amps Pulsed Source Current 1 5 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) t Reverse Recovery Time (IS = -I D[Cont.], dl S /dt = 100A/µs) 150 ns Reverse Recovery Charge (IS = -I D[Cont.], dl S /dt = 100A/µs) 1.0 µC rr Q rr 300 (Body Diode) 1.3 Volts THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.42 1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 4 Starting T = +25°C, L = 0.53mH, R = 25Ω, Peak I = 75A j G L 5 The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5518 Rev A 0.5 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT °C/W APT10M25SVR 150 VGS=10V & 15V 125 7V 100 6.5V 75 6V 50 5.5V 5V 25 4.5V I , DRAIN CURRENT (AMPERES) D 4V 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS VDS> I D (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ < 0.5 % DUTY CYCLE 100 T J = +125°C 75 50 25 T J = +125°C T J = -55°C T J = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 0 , DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 60 40 0 DS 25 6.5V 75 6V 50 5.5V 5V 25 4.5V 1.2 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.1 VGS=10V 1.0 0.9 VGS =20V 0.8 0 25 50 75 100 125 150 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 2.00 GS 1.50 1.25 1.00 0.75 0.50 -50 1.2 ID = 0.5 I D [Cont.] V = 10V 1.75 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0.90 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 T C, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE R 100 DSS 20 BV I , DRAIN CURRENT (AMPERES) D 80 (ON), DRAIN-TO-SOURCE ON RESISTANCE 125 DS TJ = +25°C 7V 4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS R I , DRAIN CURRENT (AMPERES) D T J = -55°C 10V 0 0 150 V GS=15V 125 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5518 Rev A I , DRAIN CURRENT (AMPERES) D 150 APT10M25SVR 400 1mS 50 10mS 10 5 100mS TC =+25°C TJ =+150°C SINGLE PULSE VDS =20V VDS =50V 12 VDS=80V 8 4 0 Ciss Ciss 5,000 Coss Crss 1,000 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE ID = ID [Cont.] 16 10,000 100 1 5 10 50 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 Coss DC 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 100 IDR, REVERSE DRAIN CURRENT (AMPERES) ID , DRAIN CURRENT (AMPERES) 100µS OPERATION HERE LIMITED BY R DS (ON) 15,000 0 50 100 150 200 250 300 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150°C T J =+25°C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 Drain (Heat Sink) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 1.04 (.041) 1.15 (.045) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Revised 8/29/97 13.79 (.543) 13.99 (.551) 0.46 (.018) 0.56 (.022) {3 Plcs} 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 11.51 (.453) 11.61 (.457) Heat Sink (Drain) and Leads are Plated 5.45 (.215) BSC {2 Plcs.} 050-5518 Rev A 13.41 (.528) 13.51 (.532) 5,019,522 5,434,095 5,262,336 5,528,058