Preliminary GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC–6.0 GHz AS196-307 Features ■ Positive Voltage Control (0/+3 to 0/+5 V) LPCC 4 x 4 (-307) TOP VIEW PIN 1 INDICATOR ■ High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) BOTTOM VIEW 0.013 (0.325 mm) REF. 0.10 -A- PIN 1 -B- 0.026 (0.65 mm) BSC 0.110 (2.79 mm) ± 0.002 (0.05 mm) ■ LPCC 4 x 4 mm Package ■ Integrated Silicon CMOS Driver 0.157 (4.00 mm) ± 0.008 (0.20 mm) SQ. ■ Non-Reflective Description The AS196-307 is a GaAs FET IC SPDT non-reflective switch packaged in a 16 lead leadless exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical. Typical applications include GSM, PCS, WCDMA, 2.4 and 5.8 GHz ISM and wireless local loop. 0.076 (1.95 mm) BSC 0.016 (0.40 mm) REF. 0.076 (1.95 mm) BSC 0.110 (2.79 mm) ± 0.002 (0.05 mm) 0.033 (0.85 mm) ± 0.004 (0.10 mm) 0.015 (0.387 mm) REF. Electrical Specifications (0, +5 V) 25°C Parameter1 Frequency Min. Typ. Max. Unit 0.9 1.0 1.2 2.0 1.15 1.25 1.4 2.5 dB dB dB dB Insertion Loss DC–2.0 DC–3.0 DC–4.0 DC–6.0 GHz GHz GHz GHz Isolation2 DC–2.0 DC–3.0 DC–4.0 DC–6.0 GHz GHz GHz GHz VSWR (On State) DC–2.0 GHz DC–6.0 GHz 1.3:1 1.3:1 1.5:1 1.6:1 VSWR (Off State) 0.5–6.0 GHz 1.35:1 1.7:1 Typ. Max. 50 43 35 25 55 50 40 30 dB dB dB dB Operating Characteristics at 25°C (0, +5 V) Parameter Condition Switching Characteristics3 Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru Input Power for 1 dB Compression 0/+3 V 0/+5 V Intermodulation Intercept Point (IP3) For Two-tone Input Power +8 dBm 0/+3 V 0/+5 V Control Voltages Frequency Unit 30 50 25 ns ns mV 0.9–6.0 GHz 0.9–6.0 GHz 21 27 dBm dBm 0.9–6.0 GHz 0.9–6.0 GHz 38 46 dBm dBm VCTL = “0” VCTL = “1” for VCC = 5 V @ 200 µA Max. 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Backside of exposed pad must be connected to RF ground to obtain specified isolation. Min. 0.0 3.5 0.5 5.0 V V 3. Video feedthru measured for 3 ns risetime pulse. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 11/00A 1 GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC–6.0 GHz AS196-307 Typical Performance Data (0, +5 V) 0 0 -0.25 -10 -0.75 Isolation (dB) Insertion Loss (dB) -0.50 J1–J3 -1.00 -1.25 J1–J2 -1.50 -1.75 -2.00 -30 -40 J1–J3 -50 J1–J2 -60 -2.25 -70 -2.50 0 1 2 3 4 5 6 0 1 2 3 4 5 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Isolation vs. Frequency Characteristic 1.8 S22 Off 1.6 1.4 S22 On Value RF Input Power 1 W Max. > 500 MHz, 0/+8 V Control Control Voltage -0.2 V, +8 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ΘJC 1.2 25°C/W S11 On J1–J3 0 Insertion Loss Isolation 1 Isolation Insertion Loss “0” = 0–0.5 V. “1” = 3.5–5 V. VCC = 5 V. N/C GND 16 1 VCC 11 2 VCTL GND 10 3 J1 J3 9 4 GND 5 J1–J2 12 GND VCTL J2 GND 6 Truth Table GND VSWR vs. Frequency 15 Pin Out (Bottom View) N/C 6 GND 5 14 4 13 3 7 2 Frequency (GHz) 8 1 N/C 0 GND 1.0 2 6 Absolute Maximum Ratings 2.0 VSWR -20 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 11/00A