ASI 1N4387

1N4387
SILICON MULTIPLIER VARACTOR DIODE
PACKAGE STYLE DO- 4
DESCRIPTION:
The 1N4387 is a High Power Silicon
Multiplier Varactor Diode.
MAXIMUM RATINGS
IO
200 mA
VR
150 V
PDISS
20 W @ TC = 25 C
TJ
-65 C to +150 C
TSTG
-65 C to +175 C
θJC
5.0 C/W
O
O
O
O
O
1 = Anode
2 = Cathode
O
NONE
CHARACTERISTICS
SYMBOL
O
TC = 25 C
TEST CONDITIONS
VBR
IR = 10 µA
CT
VR = 6.0 V
f = 1.0 MHz
Q
VR = 6.0 V
f = 50 MHz
MINIMUM
TYPICAL
PIN = 30 W
FIN = 150 MHz
35
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
pF
---
200
Specifications are subject to change without notice.
UNITS
V
fin
POUT(x3)
MAXIMUM
150
150
MHz
30
W
REV. A
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