ASI MV1807J1

MV1807J1
SILICON VARACTOR DIODE
DESCRIPTION:
PACKAGE STYLE DO-4
The ASI MV1807J1 is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
MAXIMUM RATINGS
I
100 mA
V
80 V
PDISS
21 W @ TC = 25 C
TJ
-65 C to +150 C
TSTG
-65 C to +175 C
θJC
O
O
O
O
O
O
Cathode to case
6.0 C/W
CHARACTERISTICS
SYMBOL
NONE
O
TC = 25 C
TEST CONDITIONS
VB
IR = 10 µA
CT
VR = 6.0 V
f = 1.0 MHz
RS
VR = 6.0 V
f = 50 MHz
MINIMUM
TYPICAL
UNITS
V
80
10.8
13.2
pF
Ohms
0.25
FOUT
POUT
MAXIMUM
1000
MHz
W
25.1
FIN
500
MHz
PIN
37.0
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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