DCR1660Y DCR1660Y Phase Control Thyristor Target Information DS5499-1.2 February 2002 FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS VDRM IT(AV) (max) ITSM dV/dt dI/dt 6500V 1665A 28000A 1000V/µs 300A/µs APPLICATIONS ■ High Power Converters ■ DC Motor Control ■ High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR1660Y65 DCR1660Y64 DCR1660Y63 DCR1660Y62 DCR1660Y61 DCR1660Y60 Repetitive Peak Voltages VDRM and VDRM V 6500 6400 6300 6200 6100 6000 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: Y (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1660Y63 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR1660Y CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 1665 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 2600 A Continuous (direct) on-state current - 2478 A 1112 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1746 A Continuous (direct) on-state current - 1556 A Max. Units 1323 A IT Half wave resistive load Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 2077 A Continuous (direct) on-state current - 1944 A 876 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1376 A Continuous (direct) on-state current - 1196 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR1660Y SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Test Conditions Max. Units 22.0 kA 2.4 x 106 A2s 28.0 kA 3.92 x 106 A2s 10ms half sine, Tcase = 125˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM, - 150 A/µs - 300 A/µs IRRM/IRRM Repetitive 50Hz Gate source 30V, 15Ω, Non-repetitive tr ≤ 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - 1.2 V rT On-state slope resistance At Tvj = 125˚C - 0.61 mΩ tgd Delay time VD = 67% VDRM, gate source 30V, 15Ω 0.5 1.5 µs 1500 - µs VT(TO) tr = 0.5µs, Tj = 25˚C tq Turn-off time IT = 1000A, tp = 1ms, Tj =125˚C, VR = 100V, dIRR/dt = 10A/µs, VDR = 67% VDRM, dVDR/dt = 25V/µs linear IL Latching current Tj = 25˚C, VD = 10V - 600 mA IH Holding current Tj = 25˚C, VG–K = ∞ - 200 mA 3/9 www.dynexsemi.com DCR1660Y THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Test Conditions Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Min. Max. Units Double side cooled DC - 0.0095 ˚CW Single side cooled Anode DC - 0.019 ˚CW Cathode DC - 0.019 ˚CW Double side - 0.002 ˚CW (with mounting compound) Single side - 0.004 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 50kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 45.0 55.0 kN GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 4 150 W PG(AV) Mean gate power 5 W - - 4/9 www.dynexsemi.com DCR1660Y CURVES 2500 8000 Tj = 125˚C 7000 6000 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 2000 1500 1000 5000 4000 3000 2000 500 dc 1/2 wave 3 phase 6 phase 1000 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Instantaneous on-state voltage, VT - (V) 2.8 Fig.2 Maximum (limit) on-state characteristics 3.0 0 0 500 1000 1500 2000 2500 3000 Mean on-state current, IT(AV) - (A) Fig.3 Power dissipation 5/9 www.dynexsemi.com DCR1660Y 10 Upper limit Lower limit 9 Gate trigger voltage, VGT - (V) 8 7 6 Preferred gate drive area Table gives pulse power PGM in Watts Pulse Width 5 Tj = -40˚C 4 Tj = 25˚C 3 Tj = 125˚C µs 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 1.0 7 8 9 10 Fig.4 Gate characteristics 25 Upper Limit Lower Limit 5W 10W 20W 50W 100W Gate trigger voltage, VGT - (V) 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) Fig.5 Gate characteristics 6/9 www.dynexsemi.com DCR1660Y 0.1 Max Total stored charge, QRA3 - (µC) Min Conditions: Tj = 125˚C IT = 550A VR = 100V Anode side cooled Thermal impedance - (˚C/W) 10000 1000 IT 0.01 Double side cooled 0.001 QRA3 Conduction 100 0.1 25% IRR IRR 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) 100 0.0001 0.001 Fig.6 Stored charge 90 0.1 1 Time - (s) Anode side 0.019 0.020 0.0207 0.0234 10 100 30 Surge current (VR = 0) Surge current (VR = 50% VRRM) 4.0 I2t (VR = 0) 25 I2t (VR = 50% VRRM) 3.5 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 I2t value - (A2s x 106) Peak half sine on-state current - (kA) 4.5 ITSM (VR = 50% VRRM) 70 0.01 Double side 0.0095 0.0105 0.0112 0.0139 Fig.7 Maximum (limit) transient thermal impedance junction to case (˚C/W) ITSM (VR = 0) 80 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Peak half sine wave on-state current - (kA) dI/dt Effective thermal resistance Junction to case ˚C/W 20 15 10 5 0 0.0 1 2 3 4 5 6 7 8 9 Pulse length, half sine wave - (ms) Fig.8 Sub-cycle surge currents 10 0 0 10 20 30 40 Number of cycles @ 50Hz 50 60 Fig.9 Multi-cycle surge currents 7/9 www.dynexsemi.com DCR1660Y PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode tab Cathode Ø112.5 max Ø73 nom 37.7 36.0 Ø1.5 Gate Ø73 nom Anode Nominal weight: 1600g Clamping force: 50kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: Y 8/9 www.dynexsemi.com DCR1660Y POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5499-1 Issue No. 1.2 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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