Ultra-low Noise, Low Power, Wideband Amplifier Features General Description • • • • • • • The EL2125C is an ultra-low noise, wideband amplifier that runs on half the supply current of competitive parts. It is intended for use in systems such as ultrasound imaging where a very small signal needs to be amplified by a large amount without adding significant noise. Its low power dissipation enables it to be packaged in the tiny SOT23 package, which further helps systems where many input channels create both space and power dissipation problems. Voltage noise of only 0.83nV/√Hz Current noise of only 2.4pA/√Hz Low offset voltage ≤200µV 180MHz -3dB BW for AV=10 Low supply current - 10mA SOT23 package available ±2.5V to ±15V operation Applications • • • • • Ultrasound input amplifiers Wideband instrumentation Communication equipment AGC & PLL active filters Wideband sensors EL2125C - Preliminary EL2125C - Preliminary The EL2125C is stable for gains of 10 and greater and uses traditional voltage feedback. This allows the use of reactive elements in the feedback loop, a common requirement for many filter topologies. It operates from ±2.5V to ±15V supplies and is available in a 5-pin SOT23 package and 8-pin SO and 8-pin PDIP packages. The EL2125C is fabricated in Elantec’s proprietary complementary bipolar process, and is specified for operation from -45°C to +85°C. Ordering Information Part No EL2125CW Package Tape & Reel Outline # 5-Pin SOT23 MDP0038 EL2125CS 8-Pin SO MDP0027 EL2125CN 8-Pin PDIP MDP0031 Connection Diagrams NC 1 OUT 1 VS- 2 5 VS+ + IN+ 3 - IN+ 3 4 IN- VS- 4 + 7 VS+ 6 OUT 5 NC EL2125CS (8-Pin SO and 8-Pin PDIP) Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 2001 Elantec Semiconductor, Inc. October 2, 2001 EL2125CW (5-Pin SOT23) IN- 2 8 NC EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier Absolute Maximum Ratings (T VS+ to VSContinuous Output Current Any Input A = 25°C) 33V 40mA VS- - 0.3V to VS+ + 0.3V Power Dissipation Operating Temperature Storage Temperature See Curves -45°C to +85°C -60°C to +150°C Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Characteristics VS = ±5V, TA = 25°C, RF = 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified. Parameter Description Conditions Min Typ Max Unit -0.2 2 mV DC Performance VOS Input Offset Voltage (SO8 & PDIP8) Input Offset Voltage (SOT23-5) 3 TCVOS Offset Voltage Temperature Coefficient IB Input Bias Current IOS Input Bias Current Offset TCIB Input Bias Current Temperature Coefficient CIN Input Capacitance AVOL Open Loop Gain PSRR Power Supply Rejection Ratio CMRR Common Mode Rejection Ratio CMIR Common Mode Input Range VOUT Output Voltage Swing VOUTL Output Voltage Swing IOUT Output Short Circuit Current IS Supply Current TBD -30 -21 0.2 mV µV/°C µA 1 TBD µA nA/°C 2.2 pF 81 dB 75 96 dB 65 100 dB No load, RF = 1kΩ 3.5 3.8 RL = 100Ω 2.8 3.1 V 80 100 mA 65 [1] [2] V [3] 10.1 V 12 mA AC Performance - RG = 20Ω, CL = 5pF BW -3dB Bandwidth 175 MHz BW ±0.1dB ±0.1dB Bandwidth 34 MHz BW ±1dB ±1dB Bandwidth 150 MHz Peaking Peaking 0.4 dB SR Slew Rate VOUT = 2VPP, measured at 20% to 80% 190 V/µs OS Overshoot, 4Vpk-pk Output Square Wave Positive 0.6 Negative 2.7 TBD % % TS Settling Time to 0.1% of ±1V Pulse TBD ns VN Voltage Noise Spectral Density 0.83 nV/√Hz IN Current Noise Spectral Density 2.4 pA/√Hz HD2 2nd Harmonic Distortion [4] TBD dBc HD3 3rd Harmonic Distortion [4] TBD dBc THD Total Harmonic Distortion [5] TBD dBc IMD Intermodulation Distortion [6] TBD % 1. 2. 3. 4. 5. 6. Measured by moving the supplies from ±4V to ±6V Measured by moving the inputs from +3.5V to -4.4V Pulse test only Frequency = 10MHz, VOUT = 1Vpk-pk, into 100Ω and 5pF load Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500Ω and 15pF load Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500Ω and 15pF 2 Electrical Characteristics VS = ±15V, TA = 25°C, RF = 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified. Parameter Description Conditions Min Typ Max Unit -0.2 2 mV DC Performance VOS Input Offset Voltage (SO8 & PDIP8) Input Offset Voltage (SOT23-5) 3 TCVOS Offset Voltage Temperature Coefficient TBD IB Input Bias Current IOS Input Bias Current Offset 0.16 TCIB Input Bias Current Temperature Coefficient TBD CIN Input Capacitance AVOL Open Loop Gain PSRR Power Supply Rejection Ratio CMRR Common Mode Rejection Ratio CMIR Common Mode Input Range VOUT Output Voltage Swing No load, RF = 1kΩ VOUTL Output Voltage Swing Positive, RF = 180Ω, RL = 500Ω 12.1 Negative -11.3 -30 IOUT Output Short Circuit Current IS Supply Current [2] -21 µA 1 pF 86 dB 75 95 dB 75 100 dB 13.5 V TBD [3] µA nA/°C 2.2 75 [1] mV µV/°C 100 V V V 150 10.8 mA 12 mA AC Performance - RG = 20Ω, CL = 5pF BW -3dB Bandwidth 220 MHz BW ±0.1dB ±0.1dB Bandwidth 23 MHz BW ±1dB ±1dB Bandwidth 63 MHz Peaking Peaking 2.5 dB SR Slew Rate 225 V/µs VOUT = 2VPP, measured at 20% to 80% TBD OS Overshoot, 4Vpk-pk Output Square Wave 0.6 % TS Settling Time to 0.1% of ±1V Pulse TBD ns VN Voltage Noise Spectral Density 0.95 nV/√Hz IN Current Noise Spectral Density 2.1 pA/√Hz HD2 2nd Harmonic Distortion [4] TBD dBc HD3 3rd Harmonic Distortion [4] TBD dBc THD Total Harmonic Distortion [5] TBD dBc IMD Intermodulation Distortion [6] TBD % 1. 2. 3. 4. 5. 6. Measured by moving the supplies from ±13.5V to ±16.5V Measured by moving the inputs from +13.5V to -14.4V Pulse test only Frequency = 10MHz, VOUT = 1Vpk-pk, into 100Ω and 5pF load Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500Ω and 15pF load Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500Ω and 15pF 3 EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier Ultra-low Noise, Low Power, Wideband Amplifier Typical Performance Curves Non-Inverting Frequency Response for Various RF Non-Inverting Frequency Response for Various RF 5 VS=±5V AV=10 RL=500Ω CL=5pF VS=±15V AV=10 RL=500Ω CL=5pF RF=1kΩ RF=499Ω Normalized Gain (dB) Normalized Gain (dB) 5 RF=180Ω 0 RF=100Ω RF=700Ω RF=1kΩ RF=180Ω 0 RF=499Ω RF=100Ω -5 1M 10M 100M -5 1M 1G 10M 100M Frequency (Hz) Inverting Frequency Response for Various RF 6 6 RF=1kΩ RF=499Ω RF=1kΩ RF=499Ω 2 RF=97.6Ω RF=350Ω -2 Normalized Gain (dB) 2 Normalized Gain (dB) 1G Frequency (Hz) Inverting Frequency Response for Various RF RF=200Ω -6 -10 -14 1M RF=350Ω -2 RF=200Ω -6 RF=97.6Ω -10 VS=±5V AV=-10 CL=5pF 10M 100M -14 1M 1G VS=±15V AV=-10 CL=5pF 10M Frequency (Hz) Normalized Gain (dB) VS=±5V RL=500Ω CL=5pF RG=20Ω 0 -5 1M AV=20 10M 100M 1G Non-Inverting Frequency Response for Various Gain 5 AV=50 100M Frequency (Hz) Non-Inverting Frequency Response vs Gain 5 Normalized Gain (dB) EL2125C - Preliminary EL2125C - Preliminary AV=10 0 AV=50 -5 1M 1G Frequency (Hz) VS=±15V RL=500Ω CL=5pF RF=700Ω AV=20 10M 100M Frequency (Hz) 4 AV=10 1G Typical Performance Curves Inverting Frequency Response vs Gain Inverting Frequency Response vs Gain 6 6 VS=±5V RL=500Ω CL=5pF AV=-10 RF=350kΩ Normalized Gain (dB) Normalized Gain (dB) 2 -2 AV=-20 RF=700kΩ AV=-50 RF=1.75kΩ -6 AV=-10 0 VS=±15V RL=500Ω CL=5pF RG=50Ω -10 -14 1M 10M 100M -14 1M 1G 10M Frequency (Hz) Non-Inverting Frequency Response for Various Output Signal Levels VS=±5V AV=10 RF=180Ω RL= 500Ω CL=5pF 6 500mVPP 4VPP 1VPP 100M 3.3VPP 500mVPP 2.5VPP -14 1M 1G VS=±5V AV=-10 RF=350Ω RL= 500Ω CL=5pF 1VPP 10M Frequency (Hz) 1G Non-Inverting Frequency Response for Various C L 5 5 VS=±5V AV=10 RF=180Ω RL=500Ω VS=±5V AV=10 RF=700Ω RL=500Ω CL=28.5pF Normalized Gain (dB) Normalized Gain (dB) 100M Frequency (Hz) Non-Inverting Frequency Response for Various CL 3 250mVPP 0 2VPP 10M 1G Inverting Frequency Response for Various Output Signal Levels 3mVPP 30mVPP 0 -5 1M 100M Frequency (Hz) Normalized Gain (dB) Normalized Gain (dB) 5 AV=-20 AV=-50 CL=16pF 1 CL=5pF -1 CL=1pF CL=17pF CL=11pF 0 CL=5pF CL=1.2pF -3 -5 1M 10M 100M -5 1M 1G Frequency (Hz) 10M 100M Frequency (Hz) 5 1G EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier Ultra-low Noise, Low Power, Wideband Amplifier Typical Performance Curves Inverting Frequency Response for Various C L Inverting Frequency Response for Various C L 6 6 CL=29.4pF CL=29.4pF 2 0 Normalized Gain (dB) Normalized Gain (dB) CL=16.4pF CL=11.4pF CL=5.1pF CL=1.2pF VS=±5V AV=10 RF=350Ω RL=500Ω CL=16.4pF CL=11.4pF -2 CL=5.1pF -6 CL=1.2pF VS=±15V AV=10 RF=500Ω RL=500Ω -10 -14 1M 10M 100M -14 1M 1G 10M 100M 1G Frequency (Hz) Frequency (Hz) Open Loop Gain and Phase Supply Current vs Supply Voltage 100 250 80 150 60 50 40 -50 20 -150 2.4 -250 400M 0 0 10k 100k 1M 10M 100M Supply Current (mA) Phase (°) Open Loop Gain (dB) 12 9.6 7.2 4.8 0 3 6 3dB Bandwidth vs Supply Voltage 12 15 Peaking vs Supply Voltage 250 3 AV=10 200 2.5 Peaking (dB) AV=-10 150 100 AV=-20 50 0 9 Supply Voltage (±V) Frequency (Hz) Bandwidth (MHz) EL2125C - Preliminary EL2125C - Preliminary AV=20 AV=50 AV=-50 2 AV=10 AV=-10 1.5 1 0.5 2 4 6 8 10 12 14 0 16 VS (±V) AV=-20 2 4 6 8 AV=-50 10 VS (±V) 6 AV=20 12 AV=50 14 16 Typical Performance Curves Small Signal Step Response Small Signal Step Response VS=±15V RL=500Ω RF=180Ω AV=10 CL=5pF 20mV/div 20mV/div VS=±5V RL=500Ω RF=180Ω AV=10 CL=5pF VINx2 VO VINx2 VO 10ns/div 10ns/div Large-Signal Step Response Large-Signal Step Response VS=±15V RL=500Ω RF=180Ω AV=10 CL=5pF Output Voltage (0.5V/div) Output Voltage (0.5V/div) VS=±5V RL=500Ω RF=180Ω AV=10 CL=5pF Time (20ns/div) Time (20ns/div) 1MHz Harmonic Distortion vs Output Swing -40 -30 VS=±5V RF=180Ω AV=10 RL=500Ω -50 -60 -50 2nd H -70 -80 3rd H -90 2nd H -60 -70 -80 3rd H -90 -100 -110 VS=±15V RF=180Ω AV=10 RL=500Ω -40 Distortion (dBc) Distortion (dBc) 1MHz Harmonic Distortion vs Output Swing -100 0 1 2 3 4 5 6 -110 7 0 5 10 15 VOUT (VPP) VOUT (VPP) 7 20 25 EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier Ultra-low Noise, Low Power, Wideband Amplifier Typical Performance Curves -30 VS=±5V VO=2VPP AV=10 RF=180Ω RL=500Ω -40 -50 THD (dBc) Voltage and Current Noise vs Frequency Voltage Noise (nV/√Hz), Current Noise (pA/√Hz) Total Harmonic Distortion vs Frequency -60 -70 -80 -90 1k 10k 100k 1M 10M 100M 100 10 IN, VS=±5V VN, VS=±5V 0.1 10 100 14 VS=±15V VO=5VPP Group Delay (ns) Settling Time (ns) 40 30 VS=±15V VO=2VPP VS=±15V AV=20 6 2 AV=10 -2 10 0 0.1 100k 10 VS=±5V VO=5VPP VS=±5V VO=2VPP 10k Group Delay 60 20 1k Frequency (Hz) Settling Time vs Accuracy 50 IN, VS=±15V VN, VS=±15V 1 Frequency (Hz) 1 -6 10 1 10 100 400 Frequency (MHz) Accuracy (%) CMRR PSRR -10 110 -30 90 -50 70 PSRR (dB) PSRRCMRR (dB) EL2125C - Preliminary EL2125C - Preliminary -70 -99 -110 10 PSRR+ 50 30 100 1k 10k 100k 1M 10M 10 10K 100M Frequency (Hz) 100K 1M 10M Frequency (Hz) 8 100M 600M Typical Performance Curves Bandwidth vs Temperature 200 10 160 1 0.1 3 Bandwidth 2.5 120 2 Peaking 1.5 80 1 40 0.01 0.001 10k 3.5 100k 1M 10M 0 -40 100M 0.5 0 40 80 Temperature (°C) Frequency (Hz) 9 120 0 160 Peaking (dB) 100 -3dB Bandwidth (MHz) R out(¾) Closed Loop Output Impedance vs Frequency EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier EL2125C - Preliminary EL2125C - Preliminary Ultra-low Noise, Low Power, Wideband Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. October 2, 2001 WARNING - Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6020 Japan Technical Center: +81-45-682-5820 10 Printed in U.S.A.