Formosa MS Advanced Schottky Barrier Diodes ASD501V Surface mount small signal type Extermely thin package 0.087 (2.2) 0.071 (1.8) Low stored charge 0.012(0.3) Typ. Majority carrier conduction R0.3 (0.012) Typ. 0.055 (1.4) 0.039 (1.0) 0.043 (1.1) 0.028 (0.7) Mechanical data Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram 0805 MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT 45 V Repetitive peak reverse voltage VRM Continuous reverse voltage VR 40 V Mean rectifying current IO 100 mA IFSM 1000 mA Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Capacitance between terminals f=1MHz and applied 10VDC reverse voltage Storage temperature Operating temperature CT 20 pF TJ -40 +125 o C TSTG -40 +125 o C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA DC VF 0.55 V Reverse current VR = 10 V DC IR 30 uA RATING AND CHARACTERISTIC CURVES (ASD501V) 10m 1000 O REVERSE CURRENT : (A) 100 10 1 0 0.1 0.2 C 25 O O 1m O 75 C 100 10 O 25 C 1 25 C C O 75 5C O 12 FORWARD CURRENT : (mA) 125 C 0.3 0.4 0.5 0.1 0 0.6 10 FORWARD VOLTAGE : (V) CAPACITANCE BETWEEN TERMINALS : (pF) Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta Fig. 4 Derating curve (mounting on glass epoxy PCBs) 40 Fig. 2 Reverse characteristics Fig. 1 Forward characteristics 100 20 REVERSE VOLTAGE : (V) 10 1 0 5 101 52 02 53 03 5 REVERSE VOLTAGE : V Fig. 3 Capacitance between terminals characteristics