FORMOSA ASD501V

Formosa MS
Advanced Schottky Barrier Diodes
ASD501V
Surface mount small signal type
Extermely thin package
0.087 (2.2)
0.071 (1.8)
Low stored charge
0.012(0.3) Typ.
Majority carrier conduction
R0.3 (0.012) Typ.
0.055 (1.4)
0.039 (1.0)
0.043 (1.1)
0.028 (0.7)
Mechanical data
Case : Molded plastic, 0805
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
0805
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
45
V
Repetitive peak reverse voltage
VRM
Continuous reverse voltage
VR
40
V
Mean rectifying current
IO
100
mA
IFSM
1000
mA
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Capacitance between terminals
f=1MHz and applied 10VDC reverse voltage
Storage temperature
Operating temperature
CT
20
pF
TJ
-40
+125
o
C
TSTG
-40
+125
o
C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA DC
VF
0.55
V
Reverse current
VR = 10 V DC
IR
30
uA
RATING AND CHARACTERISTIC CURVES (ASD501V)
10m
1000
O
REVERSE CURRENT : (A)
100
10
1
0
0.1
0.2
C
25
O
O
1m
O
75 C
100
10
O
25 C
1
25
C
C
O
75
5C
O
12
FORWARD CURRENT : (mA)
125 C
0.3
0.4
0.5
0.1
0
0.6
10
FORWARD VOLTAGE : (V)
CAPACITANCE BETWEEN TERMINALS : (pF)
Io CURRENT (%)
80
60
40
20
0
0
25
50
75
100
AMBIENT TEMPERATURE : Ta
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
40
Fig. 2 Reverse characteristics
Fig. 1 Forward characteristics
100
20
REVERSE VOLTAGE : (V)
10
1
0
5
101
52
02
53
03
5
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics