bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK™ TECHNOLOGY FOR USE WITH THE bq29312A FEATURES • • • • • • • • • • • • • • • • Patented Impedance Track™ Technology Accurately Measures Available Charge in Li-Ion and Li-Polymer Batteries Better than 1% Error Over Lifetime of the Battery Instant Accuracy – No Learning Cycle Required Supports the Smart Battery Specification SBS V1.1 Works With the TI bq29312A Analog Front-End (AFE) Protection IC to Provide Complete Pack Electronics Solution Full Array of Programmable Voltage, Current, and Temperature Protection Features Integrated Time Base Removes Need for External Crystal with Optional Crystal Input Electronics for 7.2-V, 10.8-V or 14.4-V Battery Packs With Few External Components Based on a Powerful Low-Power RISC CPU Core With High-Performance Peripherals Integrated Field Programmable FLASH Memory Eliminates the Need for External Configuration Memory Measures Charge Flow Using a High-Resolution, 16-Bit Integrating Delta-Sigma Converter – Better Than 0.65 nVh of Resolution – Self-Calibrating – Offset Error Less Than 1 µV Uses 16-Bit Delta-Sigma Converter for Accurate Voltage and Temperature Measurements Extensive Data Reporting Options For Improved System Interaction Optional Pulse Charging Feature for Improved Charge Times Drives 3-, 4- or 5-Segment LED Display for Remaining Capacity Indication Supports SHA-1 Authentication • • Lifetime Data Logging 38-Pin TSSOP (DBT) APPLICATIONS • • • Notebook PCs Medical and Test Equipment Portable Instrumentation DESCRIPTION The bq20z80 SBS-compliant gas gauge IC, incorporating patented Impedance Track™ technology, is designed for battery-pack or in-system installation. The bq20z80 measures and maintains an accurate record of available charge in Li-ion or Li-polymer batteries using its integrated high-performance analog peripherals. The bq20z80 monitors capacity change, battery impedance, open-circuit voltage, and other critical parameters of the battery pack, and reports the information to the system host controller over a serial-communication bus. It is designed to work with the bq29312A analog front-end (AFE) protection IC to maximize functionality and safety, and minimize component count and cost in smart battery circuits. The Impedance Track technology continuously analyzes the battery impedance, resulting in superior gas-gauging accuracy. This enables remaining capacity to be calculated with discharge rate, temperature, and cell aging all accounted for during each stage of every cycle. AVAILABLE OPTIONS PACKAGE TA 38-PIN TSSOP (DBT) Tube 38-PIN TSSOP (DBT) Tape and Reel –40°C to 85°C bq20z80DBT-V102 (1) bq20z80DBTR-V102 (2) (1) (2) A single tube quantity is 50 units. A single reel quantity is 2000 units Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Impedance Track is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005–2007, Texas Instruments Incorporated bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. SYSTEM DIAGRAM Discharge / Charge / Precharge FETs Fuse Pack + bq20z80 PCH FET Drive Supply V oltage Power Management LDO, TOUT, and Power Mode control Temperature Measurement <1% Error 768 Bytes of User Flash SMBus bq29312A PF Input Fail-Safe Protection TINT 32-kHz Clock Generator Precharge FET Drive Cell Balancing Drive LDO, Therm Output Drive & UVLO T1 System Watchdog Delay Counters System Interface RAM Registers 32 kHz Cell Balancing Algorithm and Control SBS v1.1 Data I2 C System Interface XAlert bq29312 RAM/Comms Validation 1st Level OC Protection 1st Level OV and UV Protection Pack Undervoltage Power Mode Control Cell and Pack Voltage Measurement Sleep Power Mode Control bq294xx 2-Tier Overcurrent Protection Impedance Track (TM) + Lifetime Data Logging Voltage Level Translator Pack Sense Resistor (5 m - 20 mW typ) TSSOP (DBT) (TOP VIEW) VIN TS1 TS2 PU PRES SCLK SAFE VDDD RBI SDATA VSSD SAFE NC NC SMBC SMBD DISP PFIN VSSD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 38 37 36 35 34 33 32 31 30 29 28 VSSD NC NC CLKOUT XCK1 / VSSA XCK2 / ROSC FILT VDDA VSSA VSSA 27 SR1 SR2 26 25 24 23 22 21 20 MRST XALERT LED1 LED2 LED3 LED4 LED5 NC - No internal connection 2 2 nd Level Overvoltage Protection Precharge Control Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 TERMINAL FUNCTIONS TERMINAL NO. NAME I/O (1) DESCRIPTION 1 VIN I Voltage measurement input from the AFE 2 TS1 I 1st Thermistor voltage input connection to monitor temperature 3 TS2 I 2nd Thermistor voltage input connection to monitor temperature 4 PU O Output to pull up the PRES pin for system detection 5 PRES I Active low input to sense system insertion and typically requires additional ESD protection 6 SCLK I/OD 7 SAFE O Active high output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 12) 8 VDDD P Positive supply for digital circuitry and I/O pins 9 RBI P Backup power to the bq20z80 data registers during periods of low operating voltage. RBI accepts a storage capacitor or a battery input. 10 SDATA I/O Data transfer to and from the AFE 12 SAFE O Active low output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 7) 13 NC – Not used— leave floating Not used— leave floating Communication clock to the AFE 14 NC – 15 SMBC I/OD SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the bq20z80 16 SMBD I/OD SMBus data open-drain bidirectional pin used to transfer address and data to and from the bq20z80 17 DISP I Display control for the LEDs. This pin is typically connected to bq29312A REG via a 100-kΩ resistor and a push-button switch to VSSD. 18 PFIN I Active low input to detect secondary protector output status and allows the bq20z80 to report the status of the 2nd level protection output 20 LED5 O LED5 display segment that drives an external LED depending on the firmware configuration 21 LED4 O LED4 display segment that drives an external LED depending on the firmware configuration 22 LED3 O LED3 display segment that drives an external LED depending on the firmware configuration 23 LED2 O LED2 display segment that drives an external LED depending on the firmware configuration 24 LED1 O LED1 display segment that drives an external LED depending on the firmware configuration 25 XALERT I Input from bq29312A XALERT output. 26 MRST I Master reset input that forces the device into reset when held high 27 SR2 IA Connections for a small-value sense resistor to monitor the battery charge- and discharge-current flow 28 SR1 IA Connections for a small-value sense resistor to monitor the battery charge- and discharge-current flow 31 VDDA P Positive supply for analog circuitry 32 FILT IA Analog input connected to the external PLL filter components which are a 150-pF capacitor to VSSA, in parallel with a 61.9-kΩ resistor and a 2200-pF capacitor in series. Place these components as close as possible to the bq20z80 to ensure optimal performance. 33 XCK2/ROSC O 32.768-kHz crystal oscillator output pin or connected to a 100k, 50ppm or better resistor if the internal oscillator is used 34 XCK1/VSSA I 32.768-kHz crystal oscillator input pin or connected to VSSA if the internal oscillator is used 35 CLKOUT O 32.768-kHz output for the bq29312. This pin should be directly connected to the AFE. 36, 37 NC - Not used— leave floating 11, 19, 38 VSSD P Negative supply for digital circuitry 29, 30 VSSA P Negative supply for analog circuitry. (1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power Submit Documentation Feedback 3 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) RANGE VDDAand VDDD relative to VSS (2) Supply voltage range V(IOD) relative to VSS (2) Open-drain I/O pins VI relative to VSS (2) –0.3 V to 4.1 V –0.3 V to 6 V Input voltage range to all other pins –0.3 V to VDDA + 0.3 V TA Operating free-air temperature range –40°C to 85°C Tstg Storage temperature range –65°C to 150°C (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VSS refers to the common node of V(SSA) and V(SSD). ELECTRICAL CHARACTERISTICS VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER VDD IDD TEST CONDITIONS Supply voltage VDDA and VDDD Operating mode current TYP MAX 3.3 3.6 350 (1) bq20z80 + bq29312A 375 Sleep mode 8 (1) bq20z80 + bq29312A Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE, SAFE, PU IOL = 0.5 mA µA 0.1 0.4 LED1 – LED5 IOL = 10 mA VOH Output high voltage, SMBC, SMBD, SDATA, SCLK, SAFE, SAFE, PU IOH = –1 mA VIL Input voltage low SMBC, SMBD, SDATA, SCLK, XALERT, PRES, PFIN –0.3 0.8 DISP VIH CIN 0.4 VDD– 0.5 –0.3 0.8 2 6 DISP 2 VDD + 0.3 Input capacitance 5 V(AI2) Input voltage range SR1, SR2 V V V Input voltage high SMBC, SMBD, SDATA, SCLK, XALERT, PRES, PFIN V(AI1) Input voltage range VIN, TS1, TS2 V µA 0.1 (1) bq20z80 + bq29312A UNIT µA 28 Shutdown Mode I(SLP) Shutdown Current V V V V pF VSS– 0.3 0.8 x VDD VSS– 0.25 0.25 V Z(AI1) Input impedance SR1, SR2 0 V–1 V 2.5 MΩ Z(AI2) Input impedance VIN, TS1, TS2 0 V–1 V 8 MΩ (1) 4 3 No flash programming I(SLP) Low-power storage mode current VOL MIN This value does not include the bq29312A Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 POWER-ON RESET VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) TYP MAX Negative-going voltage input PARAMETER TEST CONDITIONS 2.1 2.3 2.5 V VHYS Power-on reset hysteresis 50 150 200 mV MAX UNIT 0.25 V UNIT POWER ON RESET BEHAVIOR vs FREE-AIR TEMPERATURE 2.50 140 2.45 135 2.40 130 VIT- 2.35 125 2.30 120 2.25 115 Vhys 2.20 110 2.15 105 2.10 -20 -10 V hys - Hysterisis Voltage - mV V IT - Negative Going Input Threshold Voltage - V MIN VIT– 100 0 10 20 30 40 50 60 70 80 TA - Free-Air Temperature - °C INTEGRATING ADC (Coulomb Counter) CHARACTERISTICS VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER V(SR) Input voltage range, V(SR2) and V(SR1) V(SROS) Input offset INL Integral nonlinearity error TEST CONDITIONS V(SR) = V(SR2) – V(SR1) MIN TYP –0.25 µV 1 0.004% 0.019% TYP MAX 2 5 PLL SWITCHING CHARACTERISTICS VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER t(SP) (1) Start-up time (1) TEST CONDITIONS MIN 0.5% frequency error UNIT ms The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally 4.194 MHz. OSCILLATOR VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS ROSC = 100 kΩ f(exo) Frequency error from 32.768 kHz ROSC = 100 kΩ, VDD = 3.3 V XCK1 = 12-pF XTAL f(sxo) (1) Start-up time (1) TYP MAX –2% 0.25% MIN 2% –1% 0.25% –0.25% UNIT 1% 0.25% ROSC = 100 kΩ 250 µs XCK1 = 12-pF XTAL 200 ms The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency. Submit Documentation Feedback 5 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 DATA FLASH MEMORY CHARACTERISTICS VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Data retention See (1) 10 Years Flash programming write-cycles See (1) 20,000 Cycles t(WORDPROG) Word programming time See (1) I(DDPROG) See (1) tDR (1) Flash-write supply current 2 ms 8 15 mA TYP MAX UNIT 10 100 nA Assured by design. Not production tested REGISTER BACKUP VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER I(RBI) V(RBI) (1) 6 RBI data-retention input current RBI data-retention TEST CONDITIONS MIN V(RBI) > 3 V, VDD < VIT voltage (1) 1.3 Specified by design. Not production tested. Submit Documentation Feedback V bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 SMBus TIMING SPECIFICATIONS VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS fSMB SMBus operating frequency Slave mode, SMBC 50% duty cycle fMAS SMBus master clock frequency Master mode, no clock low slave extend tBUF Bus free time between start and stop tHD:STA Hold time after (repeated) start tSU:STA Repeated start setup time tSU:STO Stop setup time MIN TYP 10 MAX 100 51.2 kHz 4.7 4 µs 4.7 4 Receive mode 0 Transmit mode 300 tHD:DAT Data hold time tSU:DAT Data setup time tTIMEOUT Error signal/detect tLOW Clock low period tHIGH Clock high period See (2) tLOW:SEXT Cumulative clock low slave extend time See (3) 25 tLOW:MEXT Cumulative clock low master extend time See (4) 10 tF Clock/data fall time (VILMAX– 0.15 V) to (VIHMIN + 0.15 V) tR Clock/data rise time 0.9 VDD to (VILMAX – 0.15 V) (1) (2) (3) (4) UNIT ns 250 See (1) 25 35 4.7 4 50 300 1000 ms µs ms ns The bq20z80 times out when any clock low exceeds tTIMEOUT. tHIGH:MAX. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving the bq20z80 that is in progress. tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop. tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop. SMBus TIMING DIAGRAM Submit Documentation Feedback 7 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 FEATURE SET NOTE: The bq20z80-V102 is designed to work with the bq29312A AFE. The bq20z80 features are only available with the bq29312A. . Primary (1st Level) Safety Features The bq20z80 supports a wide range of battery and system protection features that can easily be configured. The primary safety features includes: • • • • • • • Battery cell over/under voltage protection Battery pack over/under voltage protection 2 independent charge overcurrent protection 3 independent discharge overcurrent protection Short circuit protection Over temperature protection Host watchdog Secondary (2nd Level) Safety Features The secondary safety features of the bq20z80 can be used to indicate more serious faults via the SAFE (pin 7) and SAFE (pin 12) pins. These pins can be used to blow a in-line fuse to permanently disable the battery pack from charging or discharging. The secondary safety features includes: • • • • • • • • • • • Safety over voltage Battery cell imbalance 2nd level protection IC input Safety over current Safety over temperature Open thermistor Charge FET and 0 Volt Charge FET fault Discharge FET fault Fuse blow failure detection AFE communication error Internal flash data error Charge Control Features The bq20z80 charge control features includes: • • • • • • • 8 Report the appropriate charging current needed for constant current charging and the appropriate charging voltage needed for constant voltage charging to a smart charger using SMBus broadcasts. Determines the chemical state of charge of each battery cell using Impendance Track™ and can reduce the charge difference of the battery cells in fully charged state of the battery pack gradually using cell balancing algorithm during charging. This prevents fully charged cells from overcharging causing excessive degredation and also increases the usable pack energy by preventing to early charge termination supports pre-charging/zero-volt charging support fast charging supports pulse charging detects charge termination report charging faults and also indicate charge status via charge and discharge alarms. Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 FEATURE SET (continued) Gas Gauging The bq20z80 uses the Impedance Track™ Technology to measure and calculate the available charge in battery cells. The archievable accuracy is better than the coloumb counting method over the lifetime of the battery and there is no full charge discharge learning cycle required. See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note (SLUA364) for further details. LED Display The bq20z80 can drive 3-, 4-, or 5- segment LED display for remaining capacity indication. LifeTime Data Logging Features The bq20z80 offers a lifetime data logging array, where all important measurements are stored for warranty and analysis purposes. The data monitored includes: • • • • • • • • • • • • • Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime Lifetime maximum temperature minimum temperature maximum battery cell voltage minimum battery cell voltage maximum battery pack voltage minimum battery pack voltage maximum charge current maximum discharge current maximum charge power maximum discharge power maximum average discharge current maximum average discharge power average temperature Authentication The bq20z80 supports authentication by the host using SHA-1. Power Modes The bq20z80 supports 3 different power modes to reduce power consumption: • • • In Normal Mode, the bq20z80 performs measurements, calculations, protection decicions, data update in 1 second intervals. Between these intervals, the bq20z80 is in a reduced power stage. In Sleep Mode, the bq20z80 performs measurements, calculations, protection decicions, data update in adjustable time intervals. Between these intervals, the bq20z80 is in a reduced power stage. In Shutdown Mode the bq20z80 is completety disabled. CONFIGURATION Oscillator Function The oscillator of the bq20z80 can be set up for internal or external operation. On power up, the bq20z80 automatically attempts to start the internal oscillator. If a 100-kΩ resistor is not connected to ROSC (pin 33), then it attempts to start the oscillator using an external 32.768-kHz crystal. NOTE: Install either the 100-kΩ ROSC resistor or the 12-pF, 32.768-kHz crystal. Do not install both. Submit Documentation Feedback 9 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 FEATURE SET (continued) The performance of the internal oscillator depends on the tolerance of the 100-kΩ resistor between RSOC (pin 33) and VSSA (pin 34). Choose a resistor with a tolerance of ±0.1%, and 50-ppm or better temperature drift. Place this resistor as close as possible to the bq20z80. If a 12-pF crystal is used, place it as close as possible to the XCK1 (pin 34) and XCK2 (pin 33) pins. If not properly implemented, the PCB layout in this area can degrade oscillator performance. System Present Operation The bq20z80 pulls the PU pin high periodically (1 s). Connect this pin to the PRES pin of the bq20z80 via a resistor of approximately 5 kΩ. The bq20z80 measures the PRES input during the PU-active period to determine its state. If PRES input is pulled to ground by external system, the bq20z80 detects this as system present. BATTERY PARAMETER MEASUREMENTS The bq20z80 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and a second delta-sigma ADC for individual cell and battery voltage, and temperature measurement. Charge and Discharge Counting The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage drop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolar signals from -0.25 V to 0.25 V. The bq20z80 detects charge activity when VSR = V(SR1)-V(SR2)is positive and discharge activity when VSR = V(SR1)-V(SR2) is negative. The bq20z80 continuously integrates the signal over time, using an internal counter. The fundamental rate of the counter is 0.65 nVh. Voltage The bq20z80 updates the individual series cell voltages through the bq29312A at one second intervals. The bq20z80 configures the bq29312A to connect the selected cell, cell offset, or bq29312A VREF to the CELL pin of the bq29312A, which is required to be connected to VIN of the bq20z80. The internal ADC of the bq20z80 measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the impedance of the cell for the Impedance Track™ gas-gauging. Current The bq20z80 uses the SR1 and SR2 inputs to measure and calculate the battery charge and discharge current using a 5 mΩ to 20 mΩ typ. sense resistor. Auto Calibration The bq20z80 provides an auto-calibration feature to cancel the voltage offset error across SR1 and SR2 for maximum charge measurement accuracy. The bq20z80 performs auto-calibration when the SMBus lines stay low continuously for a minimum of 5 s. Temperature The bq20z80 TS1 and TS2 inputs, in conjunction with two identical NTC thermistors (default are Semitec 103AT), measure the battery environmental temperature. The bq20z80 can also be configured to use its internal temperature sensor. COMMUNICATIONS The bq20z80 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBS specification. SMBus On and Off State The bq20z80 detects an SMBus off state when SMBC and SMBD are logic-low greater than an adjustable period of time. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, the communication bus is available. 10 Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 FEATURE SET (continued) SBS and Dataflash Values Table 1. SBS COMMANDS SBS Cmd Mode Name Format Size in Bytes Min Value Max Value Default Value 0x00 R/W ManufacturerAccess hex 2 0x0000 0xffff — 0x01 R/W RemainingCapacityAlarm unsigned int 2 0 65535 — mAh or 10mWh 0x02 R/W RemainingTimeAlarm unsigned int 2 0 65535 — min 0x03 R/W BatteryMode hex 2 0x0000 0xffff — 0x04 R/W AtRate signed int 2 -32768 32767 — mA or 10mW 0x05 R AtRateTimeToFull unsigned int 2 0 65535 — min 0x06 R AtRateTimeToEmpty unsigned int 2 0 65535 — min 0x07 R AtRateOK unsigned int 2 0 65535 — 0x08 R Temperature unsigned int 2 0 65535 — 0.1°K 0x09 R Voltage unsigned int 2 0 20000 — mV 0x0a R Current signed int 2 -32768 32767 — mA 0x0b R AverageCurrent signed int 2 -32768 32767 — mA 0x0c R MaxError unsigned int 1 0 100 — % 0x0d R RelativeStateOfCharge unsigned int 1 0 100 — % 0x0e R AbsoluteStateOfCharge unsigned int 1 0 100 — % 0x0f R RemainingCapacity unsigned int 2 0 65535 — mAh or 10mWh 0x10 R FullChargeCapacity unsigned int 2 0 65535 — mAh or 10mWh 0x11 R RunTimeToEmpty unsigned int 2 0 65535 — min 0x12 R AverageTimeToEmpty unsigned int 2 0 65535 — min 0x13 R AverageTimeToFull unsigned int 2 0 65535 — min 0x14 R ChargingCurrent unsigned int 2 0 65535 — mA 0x15 R ChargingVoltage unsigned int 2 0 65535 — mV 0x16 R BatteryStatus unsigned int 2 0x0000 0xffff — 0x17 R/W CycleCount unsigned int 2 0 65535 — 0x18 R/W DesignCapacity unsigned int 2 0 65535 0x19 R/W DesignVoltage unsigned int 2 7000 16000 14400 0x1a R/W SpecificationInfo unsigned int 2 0x0000 0xffff 0x0031 0x1b R/W ManufactureDate unsigned int 2 0 65535 0 0x1c R/W SerialNumber hex 2 0x0000 0xffff 0x0001 0x20 R/W ManufacturerName String 11+1 — — Texas Instruments ASCII 0x21 R/W DeviceName String 7+1 — — bq20z80 ASCII 0x22 R/W DeviceChemistry String 4+1 — — LION ASCII 0x23 R ManufacturerData String 14+1 — — — ASCII 0x2f R/W Authenticate String 20+1 — — — ASCII 0x3c R CellVoltage4 unsigned int 2 0 65535 mV 0x3d R CellVoltage3 unsigned int 2 0 65535 mV 0x3e R CellVoltage2 unsigned int 2 0 65535 mV 0x3f R CellVoltage1 unsigned int 2 0 65535 mV Submit Documentation Feedback Unit mAh or 10mWh mV 11 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 2. EXTENDED SBS COMMANDS SBS Cmd Mode Name Format Size in Bytes Min Value Max Value Default Value Unit 0x45 R AFEData String 11+1 — — — ASCII 0x46 R/W FETControl hex 1 0x00 0xff — 0x4f R StateOfHealth unsigned int 1 0 100 — 0x50 R SafetyAlert hex 2 0x0000 0xffff — 0x51 R SafetyStatus hex 2 0x0000 0xffff — 0x52 R PFAlert hex 2 0x0000 0xffff — 0x53 R PFStatus hex 2 0x0000 0xffff — 0x54 R OperationStatus hex 2 0x0000 0xffff — 0x55 R ChargingStatus hex 2 0x0000 0xffff — 0x57 R ResetData hex 2 0x0000 0xffff — 0x58 R WDResetData unsigned int 2 0 65535 — 0x5a R PackVoltage unsigned int 2 0 65535 — 0x5d R AverageVoltage unsigned int 2 0 65535 0x60 R/W UnSealKey hex 4 0x00000000 0xffffffff — 0x62 R/W PFKey hex 4 0x00000000 0xffffffff — 0x63 R/W AuthenKey3 hex 4 0x00000000 0xffffffff — 0x64 R/W AuthenKey2 hex 4 0x00000000 0xffffffff — 0x65 R/W AuthenKey1 hex 4 0x00000000 0xffffffff — 0x66 R/W AuthenKey0 hex 4 0x00000000 0xffffffff — 0x70 R/W ManufacturerInfo String 8+1 — — — 0x71 R/W SenseResistor unsigned int 2 0 65535 — 0x77 R/W DataflashClass hex 2 0x0000 0xffff — 0x78 R/W DataFlashSubClass1 hex 32 — — — 0x79 R/W DataFlashSubClass2 hex 32 — — — 0x7a R/W DataFlashSubClass3 hex 32 — — — 0x7b R/W DataFlashSubClass4 hex 32 — — — 0x7c R/W DataFlashSubClass5 hex 32 — — — 0x7d R/W DataFlashSubClass6 hex 32 — — — 0x7e R/W DataFlashSubClass7 hex 32 — — — 0x7f R/W DataFlashSubClass8 hex 32 — — — % mV mV µΩ Table 3. DATAFLASH VALUES Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Units 1st Level Safety 0 Voltage 0 COV Threshold U2 3700 5000 4300 mV 2 COV Time U1 0 60 2 Sec 3 COV Recovery U2 0 4400 3900 mV 5 COV Delta U1 0 200 20 mV 6 COV Temp. Hys U1 0 250 100 0.1°C 7 POV Threshold U2 0 18000 17500 mV 9 POV Time U1 0 60 2 Sec 10 POV Recovery U2 0 17000 16000 mV 12 CUV Threshold U2 0 3500 2200 mV 14 CUV Time U1 0 60 2 Sec 15 CUV Recovery U2 0 3600 3000 mV 17 PUV Threshold U2 0 16000 11000 mV 19 PUV Time U1 0 60 2 Sec 20 PUV Recovery U2 0 16000 12000 mV 12 Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Units 1st Level Safety 1 Current 0 OC (1st Tier) Chg U2 0 20000 6000 mA 2 OC (1st Tier) Chg Time U1 0 60 2 sec 3 OC Chg Recovery I2 -1000 1000 200 mA 5 OC (1st Tier) Dsg U2 0 20000 6000 mA 7 OC (1st Tier) Dsg Time U1 0 60 2 sec 8 OC Dsg Recovery U2 0 1000 200 mA 10 OC (2nd Tier) Chg U2 0 20000 8000 mA 12 OC (2nd Tier) Chg Time U1 0 60 2 Sec 13 OC (2nd Tier) Dsg U2 0 22000 8000 mA 15 OC (2nd Tier) Dsg Time U1 0 60 2 Sec 16 Current Recovery Time U1 0 60 8 Sec 17 AFE OC Dsg H1 0x00 0x1f 0x12 hex 18 AFE OC Dsg Time H1 0x00 0x0f 0x0f hex 19 AFE OC Dsg Recovery U2 10 1000 100 mA 21 AFE SC Chg Cfg H1 0x00 0xff 0x77 hex 22 AFE SC Dsg Cfg H1 0x00 0xff 0x77 hex 23 AFE SC Recovery U2 0 200 1 mA 0 Over Temp Chg U2 0 1200 550 0.1°C 2 OT Chg Time U1 0 60 2 Sec 3 OT Chg Recovery U2 0 1200 500 0.1°C 5 Over Temp Dsg U2 0 1200 600 0.1°C 7 OT Dsg Time U1 0 60 2 Sec 8 OT Dsg Recovery U2 0 1200 550 0.1°C 1st Level Safety 2 Temperature 1st Level Safety 3 Host Comm 0 Host Watchdog Timeout U1 0 255 0 Sec 2nd Level Safety 16 Voltage 0 SOV Threshold U2 0 20000 18000 mV 2 SOV Time U1 0 30 0 Sec 3 Cell Imbalance Current U1 0 200 5 mA 4 Cell Imbalance Fail Voltage U2 0 5000 1000 mV 6 Cell Imbalance Time U1 0 30 0 Sec 7 Battery Rest Time U2 0 65535 1800 Sec 9 PFIN Detect Time U1 0 30 0 Sec 0 SOC Chg U2 0 30000 10000 mA 2 SOC Chg Time U1 0 30 0 Sec 3 SOC Dsg U2 0 30000 10000 mA 5 SOC Dsg Time U1 0 30 0 Sec 0 SOT Chg U2 0 1200 650 0.1°C 2 SOT Chg Time U1 0 30 0 Sec 3 SOT Dsg U2 0 1200 750 0.1°C 5 SOT Dsg Time U1 0 30 0 Sec 6 Open Thermistor I2 -1000 1200 -333 0.1°C 8 Open Time I1 0 30 0 Sec 0 FET Fail Limit U2 0 500 20 mA 2 FET Fail Time U1 0 30 0 Sec 0 AFE Check Time U1 0 255 0 Sec 1 AFE Fail Limit U1 0 255 10 cnt 2 AFE Fail Recovery Time U1 0 255 20 Sec 3 AFE Init Retry Limit U1 0 255 6 num 4 AFE Init Limit U1 0 255 20 cnt 0 Fuse Fail Limit U2 0 20 2 mA 2 Fuse Fail Time U1 0 30 0 Sec 2nd Level Safety 2nd Level Safety 17 18 2nd Level Safety 19 2nd Level Safety 20 2nd Level Safety 21 Current Temperature FET Verification AFE Verification Fuse Verification Submit Documentation Feedback 13 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Units Charge Control 32 Charge Inhibit Cfg 0 Chg Inhibit Temp Low I2 -400 1200 0 0.1°C 2 Chg Inhibit Temp High I2 -400 1200 450 0.1°C 4 Temp Hys I2 0 100 10 0.1°C 0 Pre-chg Current U2 0 2000 250 mA 2 Pre-chg Temp I2 -400 1200 120 0.1°C 4 Pre-chg Voltage U2 0 20000 3000 mV 6 Recovery Voltage U2 0 20000 3100 mV 0 Fast Charge Current U2 0 10000 4000 mA 2 Charging Voltage U2 0 20000 16800 mV 4 Over Charging Voltage U2 0 2000 500 mV 6 Delta Temp I2 0 500 50 0.1°C 8 Suspend Low Temp I2 -400 1200 -50 0.1°C 10 Suspend High Temp I2 -400 1200 550 0.1°C 0 Turn ON Voltage U2 0 5000 4150 mV 2 Turn OFF Voltage U2 0 5000 4250 mV 4 Max ON Pulse Time U1 0 240 240 S/4 5 Min OFF Pulse Time U1 0 240 0 S/4 6 Max OFF Voltage U2 0 5000 4270 mV 0 Maintenance Current U2 0 1000 0 mA 2 Taper Current U2 0 1000 250 mA 6 Termination Voltage U2 0 1000 300 mV 8 Current Taper Window U1 0 60 40 Sec 9 TCA Set % I1 -1 100 -1 % 10 TCA Clear % I1 -1 100 95 % 11 FC Set % I1 -1 100 -1 % Charge Control Charge Control Charge Control Charge Control 33 34 35 36 Pre-Charge Cfg Fast Charge Cfg Pulse Charge Cfg Termination Cfg. 12 FC Clear % I1 -1 100 98 % Charge Control 37 Cell Balancing Cfg 0 Min Cell Deviation U2 0 65535 1750 Sec/mAH Charge Control 38 Charging Faults 0 Over Charging Voltage U2 0 3000 500 mV 2 Over Charging Volt Time U1 0 60 2 Sec 3 Over Charging Current U2 0 2000 500 mA 5 Over Charging Curr Time U1 0 60 2 Sec 6 Over Charging Curr Recov U2 0 2000 100 mA 8 Depleted Voltage U2 0 16000 8000 mV 10 Depleted Voltage Time U1 0 60 2 Sec 11 Depleted Recovery U2 0 16000 8500 mV 13 Over Charge Capacity U2 0 4000 300 mAh 15 Over Charge Recovery U2 0 100 2 mAh 17 FC-MTO U2 0 65535 10800 Sec 19 PC-MTO U2 0 65535 3600 Sec 21 Charge Fault Cfg H1 0x00 0xff 0 14 Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Units SBS Configuration 48 Data 0 Rem Cap Alarm U2 0 700 300 mAh 2 Rem Time Alarm U2 0 30 10 Min 4 Init Battery Mode H2 0x0000 0xffff 0x0081 hex 6 Design Voltage U2 7000 18000 14400 mV 8 Spec Info H2 0x0000 0xffff 0x0031 hex 10 Manuf Date U2 0 65355 0 date 12 Ser. Num. H2 0x0000 0xffff 0x0001 hex 14 Cycle Count U2 0 65355 0 cnt 16 CC Threshold I2 100 32767 4400 mAh 18 CC % U1 0 100 90 % 19 CF MaxError Limit U1 0 100 100 % 20 Design Capacity U2 0 65355 4400 mAh 22 Design Energy U2 0 65355 6336 10mWh 24 Manuf Name S12 - - Texas Inst. 36 Device Name S8 - - bq20z80 44 Device Chemistry S5 - - LION 0 TDA Set % I1 -1 100 6 % 1 TDA Clear % I1 -1 100 8 % 2 FD Set % I1 -1 100 2 % 3 FD Clear % I1 -1 100 5 % 4 TDA Set Volt Threshold U2 0 16800 5000 mV 6 TDA Set Volt Time U1 0 60 5 Sec 7 TDA Clear Volt U2 0 16800 5500 mV 9 FD Set Volt Threshold U2 0 16800 5000 mV 11 FD Volt Time U1 0 60 5 Sec 12 FD Clear Volt U2 0 16800 5500 mV 0 Pack Lot Code H2 0x0000 0xffff 0x0000 2 PCB Lot Code H2 0x0000 0xffff 0x0000 4 Firmware Version H2 0x0000 0xffff 0x0000 6 Hardware Revision H2 0x0000 0xffff 0x0000 8 Cell Revision H2 0x0000 0xffff 0x0000 SBS Configuration System Data 49 56 Configuration Manufacturer Data System Data 58 Manufacturer Info 0 Manuf. Info S9 - - 12345678 System Data 59 LifeTime Data 0 Lifetime Max Temp I2 0 1400 300 0.1°C 2 Lifetime Min Temp I2 -600 1400 200 0.1°C 4 Lifetime Max Cell Voltage U2 0 65535 3500 mV 6 Lifetime Min Cell Voltage U2 0 65535 3200 mV 8 Lifetime Max Pack Voltage U2 0 65535 14000 mV 10 Lifetime Min Pack Voltage U2 0 65535 12800 mV 12 Lifetime Max Chg Current I2 -32768 32767 1500 mA 14 Lifetime Max Dsg Current I2 -32768 32767 -3000 mA 16 Lifetime Max Chg Power I2 -32768 32767 1500 10mW 18 Lifetime Max Dsg Power I2 -32768 32767 -1500 10mW 22 Life Max AvgDsg Cur I2 -32768 32767 -1000 mA 26 Life Max AvgDsg Pow I2 -32768 32767 -1500 10mW 28 Lifetime Avg Temp I2 0 1400 250 0.1°C 0 LT Temp Samples U4 0 140000000 0 num System Data 60 LifeTime Temp Samples Submit Documentation Feedback 15 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Configuration 64 Registers 0 Operation Cfg A H2 0x0000 0xffff 0x0F29 2 Operation Cfg B H2 0x0000 0xffff 0x6440 4 Permanent Fail Cfg H2 0x0000 0xffff 0x0000 6 Non-Removable Cfg H2 0x0000 0xffff 0x0000 hex 0 LED Flash Rate U2 0 65535 512 500µs 2 LED Blink Rate U2 0 65535 1024 500µs 4 LED Delay U2 1 65535 100 500µs 6 LED Hold Time U1 0 255 4 s 7 CHG Flash Alarm I1 -1 101 10 % 8 CHG Thresh 1 I1 -1 101 0 % 9 CHG Thresh 2 I1 -1 101 20 % 10 CHG Thresh 3 I1 -1 101 40 % 11 CHG Thresh 4 I1 -1 101 60 % 12 CHG Thresh 5 I1 -1 101 80 % 13 DSG Flash Alarm I1 -1 101 10 % 14 DSG Thresh 1 I1 -1 101 0 % 15 DSG Thresh 2 I1 -1 101 20 % 16 DSG Thresh 3 I1 -1 101 40 % 17 DSG Thresh 4 I1 -1 101 60 % 18 DSG Thresh 5 I1 -1 101 60 % 0 Flash Update OK Voltage U2 6000 20000 7500 mV 2 Shutdown Voltage U2 5000 20000 7000 mV 4 Shutdown Time U1 0 60 10 Sec 5 Charger Present U2 0 23000 12000 mV 7 Sleep Current U2 0 100 10 mA 9 Bus Low Time U1 0 255 5 Sec 10 Cal Inhibit Temp Low I2 -400 1200 50 0.1°C 12 Cal Inhibit Temp High I2 -400 1200 450 0.1°C 14 Sleep Voltage Time U1 0 100 5 Sec 15 Sleep Current Time U1 0 255 20 Sec 0 Load Select U1 0 255 3 num 1 Load Mode U1 0 255 0 num 45 Term Voltage I2 -32768 32767 12000 mV 60 User Rate-mA I2 -9000 -2000 0 mA 62 User Rate-mW I2 -14000 -3000 0 10mW 64 Reserve Cap-mAh I2 0 9000 0 mAh 66 Reserve Cap-mWh I2 0 14000 0 10mWh 0 Dsg Current Threshold U2 0 2000 100 mA 2 Chg Current Threshold U2 0 2000 50 mA 4 Quit Current U2 0 1000 10 mA 6 Dsg Relax Time U1 0 255 1 Sec 7 Chg Relax Time U1 0 255 60 Sec LED Support Power Gas Gauging Gas Gauging 16 67 68 80 81 LED Cfg Power IT Cfg Current Thresholds Submit Documentation Feedback Units bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Subclass ID Subclass Offset Name Data Type Min Value Max Value Default Value Units Gas Gauging 82 State 0 Qmax Cell 0 U2 0 65535 4400 mAh 2 Qmax Cell 1 U2 0 65535 4400 mAh 4 Qmax Cell 2 U2 0 65535 4400 mAh 6 Qmax Cell 3 U2 0 65535 4400 mAh 8 Qmax Pack U2 0 65535 4400 mAh 12 Update Status H1 0x00 0x06 0x00 num 21 Avg I Last Run I2 -32768 32767 -2000 mA 23 Avg P Last Run I2 -32768 32767 -3022 10mW 25 Delta Voltage I2 -32768 32767 0 mV 0 Cell0 R_a flag H2 0x0000 0xffff 0xff55 2 Cell0 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 Cell0 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 Cell0 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 Cell0 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 Cell0 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 Cell0 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 Cell0 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 Cell0 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 Cell0 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 Cell0 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 Cell0 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 Cell0 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 Cell0 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 Cell0 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 Cell0 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 Cell1 R_a flag H2 0x0000 0xffff 0xff55 2 Cell1 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 Cell1 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 Cell1 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 Cell1 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 Cell1 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 Cell1 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 Cell1 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 Cell1 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 Cell1 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 Cell1 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 Cell1 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 Cell1 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 Cell1 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 Cell1 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 Cell1 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 Cell2 R_a flag H2 0x0000 0xffff 0xff55 2 Cell2 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 Cell2 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 Cell2 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 Cell2 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 Cell2 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 Cell2 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 Cell2 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 Cell2 R_a 7 I2 -32768 32767 204 mΩ at 0°C Ra Table Ra Table Ra Table 88 89 90 R_a0 R_a1 R_a2 Submit Documentation Feedback 17 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Ra Table Ra Table Ra Table 18 Subclass ID 91 92 93 Subclass R_a3 R_a0x R_a1x Offset Name Data Type Min Value Max Value Default Value Units 18 Cell2 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 Cell2 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 Cell2 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 Cell2 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 Cell2 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 Cell2 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 Cell2 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 Cell3 R_a flag H2 0x0000 0xffff 0xff55 2 Cell3 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 Cell3 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 Cell3 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 Cell3 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 Cell3 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 Cell3 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 Cell3 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 Cell3 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 Cell3 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 Cell3 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 Cell3 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 Cell3 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 Cell3 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 Cell3 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 Cell3 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 xCell0 R_a flag H2 0x0000 0xffff 0xffff 2 xCell0 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 xCell0 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 xCell0 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 xCell0 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 xCell0 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 xCell0 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 xCell0 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 xCell0 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 xCell0 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 xCell0 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 xCell0 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 xCell0 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 xCell0 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 xCell0 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 xCell0 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 xCell1 R_a flag H2 0x0000 0xffff 0xffff 2 xCell1 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 xCell1 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 xCell1 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 xCell1 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 xCell1 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 xCell1 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 xCell1 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 xCell1 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 xCell1 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 xCell1 R_a 9 I2 -32768 32767 254 mΩ at 0°C Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class Ra Table Ra Table PF Status Subclass ID 94 95 96 Subclass R_a2x R_a3x Device Status Data Offset Name Data Type Min Value Max Value Default Value Units 22 xCell1 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 xCell1 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 xCell1 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 xCell1 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 xCell1 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 xCell2 R_a flag H2 0x0000 0xffff 0xffff 2 xCell2 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 xCell2 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 xCell2 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 xCell2 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 xCell2 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 xCell2 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 xCell2 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 xCell2 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 xCell2 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 xCell2 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 xCell2 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 xCell2 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 xCell2 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 xCell2 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 xCell2 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 xCell3 R_a flag H2 0x0000 0xffff 0xffff 2 xCell3 R_a 0 I2 -32768 32767 160 mΩ at 0°C 4 xCell3 R_a 1 I2 -32768 32767 166 mΩ at 0°C 6 xCell3 R_a 2 I2 -32768 32767 153 mΩ at 0°C 8 xCell3 R_a 3 I2 -32768 32767 151 mΩ at 0°C 10 xCell3 R_a 4 I2 -32768 32767 145 mΩ at 0°C 12 xCell3 R_a 5 I2 -32768 32767 152 mΩ at 0°C 14 xCell3 R_a 6 I2 -32768 32767 176 mΩ at 0°C 16 xCell3 R_a 7 I2 -32768 32767 204 mΩ at 0°C 18 xCell3 R_a 8 I2 -32768 32767 222 mΩ at 0°C 20 xCell3 R_a 9 I2 -32768 32767 254 mΩ at 0°C 22 xCell3 R_a 10 I2 -32768 32767 315 mΩ at 0°C 24 xCell3 R_a 11 I2 -32768 32767 437 mΩ at 0°C 26 xCell3 R_a 12 I2 -32768 32767 651 mΩ at 0°C 28 xCell3 R_a 13 I2 -32768 32767 1001 mΩ at 0°C 30 xCell3 R_a 14 I2 -32768 32767 1458 mΩ at 0°C 0 PF Flags 1 H2 0x0000 0xffff 0x0000 2 Fuse Flag H2 0x0000 0xffff 0x0000 4 PF Voltage U2 0 65535 0 mV 6 PF C4 Voltage U2 0 9999 0 mV 8 PF C3 Voltage U2 0 9999 0 mV 10 PF C2 Voltage U2 0 9999 0 mV 12 PF C1 Voltage U2 0 9999 0 mV 14 PF Current I2 -32768 32767 0 mA 16 PF Temperature U2 0 9999 0 0.1°K 18 PF Batt Stat H2 0x0000 0xffff 0x0000 20 PF RC-mAh U2 0 65535 0 mAh 22 PF RC-10mWh U2 0 65535 0 10mWh 24 PF Chg Status H2 0x0000 0xffff 0x0000 Submit Documentation Feedback 19 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 3. DATAFLASH VALUES (continued) Class PF Status Calibration Calibration Calibration Calibration 20 Subclass ID 97 104 105 106 107 Subclass AFE Regs Data Config Temp Model Current Offset Name Data Type Min Value Max Value Default Value 26 PF Safety Status H2 0x0000 0xffff 0x0000 28 PF Flags 2 H2 0x0000 0xffff 0x0000 0 AFE Status H1 0x00 0xffff 0x00 1 AFE Output H1 0x00 0xffff 0x00 2 AFE State H1 0x00 0xffff 0x00 3 AFE Function H1 0x00 0xffff 0x00 4 AFE Cell Select H1 0x00 0xffff 0x00 5 AFE OLV H1 0x00 0xffff 0x00 6 AFE OLT H1 0x00 0xffff 0x00 7 AFE SCC H1 0x00 0xffff 0x00 8 AFE SCD H1 0x00 0xffff 0x00 0 CC Gain F4 1.00E+128 1.00E+128 0.471 num 4 CC Delta F4 1.00E+128 1.00E+128 140500 num 8 Ref Voltage I2 0 32767 24500 50µV 10 AFE Corr U2 0 65535 1288 num 12 AFE Pack Gain U2 0 65535 30625 num 14 CC Offset I2 -32768 32767 -12250 num 16 Board Offset I1 -128 127 0 num 17 Int Temp Offset I1 -128 127 0 num 18 Ext1 Temp Offset I1 -128 127 0 num 19 Ext2 Temp Offset I1 -128 127 0 num 0 CC Current U2 0 65535 3000 mA 2 Voltage Signal U2 0 65535 16800 mV 4 Temp Signal U2 0 65535 2980 0.1°K 6 CC Offset Time U2 0 65535 250 ms 8 ADC Offset Time U2 0 65535 32 ms 10 CC Gain Time U2 0 65535 250 ms 12 Voltage Time U2 0 65535 1984 ms 14 Temperature Time U2 0 65535 32 ms 17 Cal Mode Timeout U2 0 65535 38400 sec/128 0 Ext Coef 1 I2 -32768 32767 -28285 Sec 2 Ext Coef 2 I2 -32768 32767 20848 Sec 4 Ext Coef 3 I2 -32768 32767 -7537 Sec 6 Ext Coef 4 I2 -32768 32767 4012 Sec 8 Ext Min AD I2 -32768 32767 0 Sec 10 Ext Max Temp I2 -32768 32767 4012 Sec 12 Int Coef 1 I2 -32768 32767 0 Sec 14 Int Coef 2 I2 -32768 32767 0 Sec 16 Int Coef 3 I2 -32768 32767 -11136 Sec 18 Int Coef 4 I2 -32768 32767 5754 Sec 20 Int Min AD I2 -32768 32767 0 Sec 22 Int Max Temp I2 -32768 32767 5754 Sec 0 Filter U1 0 255 239 mA 1 Deadband U1 0 255 3 mA 2 CC Deadband U1 0 255 34 nV+ 3 CC Max Deadband U1 0 255 5 nV+ 4 CC Deadband Sample U2 0 65535 256 num 6 CC Max Offset Sample U2 0 65535 64 num Submit Documentation Feedback Units bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Firmware Version Changes bq20z80-V101 to bq20z80-V102 Changes Table 4. CHANGE DETAILS CHANGE bq0z80-V102 bq20z80-V101 COMMENTS Corrected to allow display to turn off when charging and button pushed. LED display operates correctly during charging. LED display would stay on until Correct operation of the LED charging terminated after the button display under all conditions was pushed. Only occurs when LED display not configured to be always on during charging. Allow negative LED thresholds to permit LED alarms to be disabled Configuring negative LED alarm threshold disables LED alarm functionality. Feature not available Allow better customization Allow zero values for ALARM Configuring zero value for the and CHARGING LED blink LED blink rates disables them. rates to disable them Feature not available Allow better customization Restore initialization of dodcharge initialized to the dodcharge in relaxed state correct value so that the correct dodcharge value is used in capacity estimation dodcharge value set to zero Improved gauging accuracy with correct initialization of dodcharge value. Only clear offset calibration flag when SMBus lines go high. Prevents offset calibration occurring just because a safety condition occurs and then clears when the SMBus lines are low. Offset calibration occurs multiple times if safety condition occurs when SMBus lines are low. More appropriate period between offset calibrations when SMBus lines are low. Change so that setting AFE Fail Limit to zero disables PF_AFE_C Configurable option to allow disabling PF_AFE_C trigger Feature not available. Allow better customization Enable LED display to turn off after charge termination and if SMBus lines are detected low and LEDs enabled during charging. LED display turns off after charge LED display stays on when charging Correct operation of the LED termination. terminates after SMBus lines are display under all conditions detected low. Set charge FET state immediately when entering sleep Charge FET state set correctly, immediately after entering sleep Change DF:Operation Cfg B [CCT = 0], so that SBS.CycleCount( ) threshold is in mAH, not in % of FCC Data flash default bases DF:Operation Cfg B [CCT = 1], SBS.CycleCount( ) calculation on making the default mAh and not % of FCC SBS.CycleCount( ) calculation to be based on % of FCC Data flash default changed to reflect common customer usage When DF:Operation Cfg B [CCT = 1], so that SBS.CycleCount( ) threshold is % of FCC, then DF:CC Threshold is used as a minimum for the SBS.CycleCount( ) threshold Use DF:CC Threshold as the Small or negative SBS.Full Charge minimum to prevent rapid Capacity( ) values (should not occur incrementing of the under normal operation) from SBS.Cyclecount( ), damaging the causing the SBS.CycleCount( ) data flash incrementing rapidly, potentially damaging the data flash Improved system reliability When exiting the relaxed state to sleep, the initial charge capacity is correctly calculated Corrected initial charge capacity calculation to be accurate when exiting relaxed state to sleep More reliable SBS:FullChargeCapacity( ) calculation under all system conditions The CHG FET would not get set to the correct state for sleep until the first voltage measurement. If the relaxed state was exited to sleep after a valid DOD measurement (30-minute default value), then the initial charge capacity would not be recalculated and would result in an incorrect FCC value if the sleep state was exited before another valid DOD measurement (30-minute default value) Submit Documentation Feedback Quicker transition of FET to the correct state in sleep 21 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 4. CHANGE DETAILS (continued) CHANGE Correct update of Remcap in relaxed state to use passed charge bq0z80-V102 Charge or discharge current accumulated in a relaxed state used to update Remcap bq20z80-V101 COMMENTS If the relaxed state was exited after the accumulation of significant charge or discharge current (over at most 100 seconds with default values), the RemCap and FCC would be in error by this charge. This is only significant if the relaxed state can exist with significant current as determined by application settings. More reliable SBS:FullChargeCapacity( ) SBS:RemainingCapacity( ) calculation under all system conditions Implement disable of Prevent invalid soc values from resistance update based on causing incorrect resistance accumulative scale. If the updates product of 15 consecutive (default value) resistance scale factors is less than 0.5 or more than 1.5, then resistance update is disabled until the next valid soc measurement. Sets bit 2 of Operation Status to indicate resistance update disabled. Incorrect resistance updates that could result from invalid soc values More reliable resistance updates under all system conditions Implement disable of Prevent invalid soc values from resistance update based on causing incorrect resistance estimated capacity error. updates Sets bit 2 of Operation Status to indicate resistance update disabled. Incorrect resistance updates that could result from invalid soc values More reliable resistance updates under all system conditions Disable Qmax increment if due to Grid 14 and exit of discharge Prevent unnecessary Qmax increments Qmax increments can occur due to Grid 14 and exit of discharge Improved Qmax data reliability under all system conditions. Drive all unused pins low Provides better ESD immunity Not all unused pins driven low Improved ESD immunity Initial charge capacity calculation when dod0 is measured in the overdischarged state is corrected Overdischarged state does not affect the accuracy of FCC calculations An incorrect initial charge capacity affects FCC that is calculated during discharge or a Qmax update. If FCC is not changed by a Qmax update, then reported RemainingCapacity could be negative after 5 hours of relaxation More reliable SBS:FullChargeCapacity( ) SBS:RemainingCapacity( ) calculation under all system conditions Correct calculation of FCC and RemCap when dod0 is taken when the battery is overdischarged or overcharged. This allows RemCap to go negative, or greater than FCC (though is only reported from 0 - FCC). Overcharged/Overdischarged does not affect the accuracy of FCC and RemCap calculations The RemainingCapacity will increment (or decrement) during charging (discharging) even when the battery is in an overdischarged (overcharged) state. More reliable SBS:FullChargeCapacity( ) SBS:RemainingCapacity( ) calculation under all system conditions Change cell imbalance DF:Battery Rest Time from 1 byte to 2 bytes and set the default value to 1800 seconds New feature providing improved customization Feature not available Improved customization for Cell Imbalance detection Use upper and lower limit for resistance accumulative scale. Set default values to 300% and 30%. More reliable resistance updates under all system conditions Add DF:CF MaxError limit for New feature providing improved setting SBS.BatteryMode( ) customization [CONDITION FLAG]. Set default value to 100%. 22 Feature not available Submit Documentation Feedback Improved customization bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 Table 4. CHANGE DETAILS (continued) CHANGE bq0z80-V102 bq20z80-V101 Use SBS.AtRate( ), UserRate and C/5 rate for relaxed capacity calculation, respectively, if set by Load Select; otherwise, use previous rate. COMMENTS More reliable SBS:FullChargeCapacity( ) SBS:RemainingCapacity( ) calculation under all system conditions Correct Host Watchdog from being reset by broadcasts Host Watchdog functionality not affected by alarm or charger broadcasts Host Watchdog reset by alarm or charger broadcasts Reliable Host Watchdog functionality under all system conditions The voltage table chemistry ID can be read by writing 0x0008 to ManufacturerAccess and then reading from ManufacturerAccess. The default chemistry ID is 0x0100 New feature providing more information Feature not available Improved information access SBS.BatteryMode( ) is initialized on high transition of the SMBus lines to DF:Init BatteryMode, instead of always clearing SBS.BatteryMode( ) defined bits on high transition of the SMBus lines. Customization allows for preserving SBS.BatteryMode( ) settings through SMBus line transitions Feature not available Improved customization Broadcast timers are set correctly on high transition of SMBus lines. The timers are set to 10 seconds on high transition of SMBus lines. Broadcast timer accurate regardless of CC offset calibration or entry to sleep Broadcast timer accuracy required a Improved broadcast timing CC offset calibration and entry to accuracy to meet Smart Battery sleep. Data spec bq20z80 to bq20z80-V101 Changes CHANGE bq20z80 bq20z80-V101 COMMENTS Added authentication (optional SBS command 0x2f) Command 0x2f has no function and is Command 0x2f is the not acknowledged. SBS.Authenticate( ) command to the bq20z80 to begin the SHA1 authentication. Additional feature to enable host to authenticate the battery Added Cell Balancing Cell balancing not available Added State of Charge cell balancing algorithm Additional feature to enable longer lifetime of battery Added charge fault FET Enable register When charge faults occur, FET action is taken. When charge faults occur, FET action is taken if enabled in DF:FET Enable register. Adds flexibility to system interaction Added pulse compensation for end of discharge Applications with pulsed current loads and minimum voltage requirements can have less RemainingCapacity than reported. The voltage pulses caused by pulsed Added additional feature to improve current loads are measured and used capacity prediction to better estimate RemainingCapacity. Added SBS.BatteryStatus( ) [TDA, FD] voltage thresholds SBS.BatteryStatus( ) [TDA, FD] are only set on SBS.RSOC, detection of charge termination or faults SBS.BatteryStatus( ) [TDA, FD] are now set and cleared based on SBS.Voltage( ) Adds flexibility to system interaction Added option for LEDs in series with current source LED display is only in parallel. LED display is available in series (with current source) or parallel. Adds capability for higher brightness LEDs Configured pin 7 as active high fuse blow Pin 7 is not connected. Pin 7 is now an active high reflection of SAFE (pin 12). Adds flexibility to choose different circuits driven by the permanent failure signal Added State of Health calculation (command 0x4f) Command 0x4f has no function and is Command 0x4f is the not acknowledged. SBS.StateOfHealth( ) command where SOH is the ratio of SBS.DesignCapacity( ) to SBS.FullChargeCapacity( ). Additional feature to allow host to easily determine health of the battery Added Synchronization of SBS.RemainingCapacity( ) to SBS.FullChargeCapcity( ) at charge taper termination. SBS.RemainingCapacity( ) is not affected and could be < 100% at charge termination. Adds option to enable charge synchronization in order to display RelativeStateOfCharge as 100% at charge termination If DF:Operation Cfg [RMFCC] is set then SBS.RemainingCapacity( ) is updated to the value of SBS.FullChargeCapcity( ) at charge termination. Submit Documentation Feedback 23 bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 CHANGE bq20z80 bq20z80-V101 COMMENTS Improved thermal model A preliminary thermal mode was used. An updated thermal model is used. Improved thermal compensation of Impedance Track™ algorithm Improved cell capacity measurement by limiting valid temperature ranges Valid voltage measurements for cell capacity estimation can occur at any temperature. Valid voltage measurements for cell capacity estimation must occur within a defined temperature range. Improves capacity estimation Improved cell capacity measurement After a full reset, it may take several minutes for voltage reading to settle to the most accurate reading. Settling time of voltage measurements after a full reset is reduced. Improves initial voltage reading accuracy Improved default resistance tables A preliminary default resistance mode was used. An updated default resistance mode is used. Improved thermal accuracy of Impedance Track™ algorithm Prevented lifetime updates until IT is enabled Data flash lifetime data is updated under all conditions. Data flash lifetime data is not updated until Impedance Track™ is enabled. Improves suitability of lifetime data Aligned SBS.RemainingCapacity( ) with DF:Terminate Voltage SBS.RemainingCapacity( ) could be above zero when SBS.Voltage( ) reaches DF:Terminate Voltage. Forces SBS.RemainingCapacity( ) to zero when SBS.Voltage( ) is below terminate voltage Improves alignment between reporting and system status Disabled LEDs for undervoltage conditions When SBS.OperationStatus( ) [CUV or PUV] is set, then the LED display could be activated. When SBS.OperationStatus( ) [CUV or PUV] is set, the LED display is disabled. Reduces risk of deeply discharging the battery Clear SBS.BatteryStatus( ) [RCA] when not SBS.BatteryStatus( ) [DSG] SBS.BatteryStatus( ) [RCA] is not cleared when SBS.BatteryStatus( ) [DSG] is cleared. SBS.BatteryStatus( ) [RCA] is now cleared when SBS.BatteryStatus( ) [DSG] is cleared. Corrected to meet SBS specification Allowed sleep mode for undervoltage conditions When SBS.OperationStatus( ) [CUV or PUV] is set, then entry to sleep mode is disabled. When SBS.OperationStatus( ) [CUV or PUV] is set, then entry to sleep mode is allowed. Reduces risk of deeply discharging the battery Improvements made to Lifetime data Does not save maximum and minimum lifetime AverageCurrent or AveragePower. Only saves lifetime data when new values exceed old values by defined delta values Saves maximum and minimum lifetime AverageCurrent and AveragePower. Lifetime data is saved after a defined period of time even if new values do not exceed old values by defined delta values Improves lifetime data Changes made to pulse charging Voltages for pulse charging are sampled once a second. Voltages for pulse charging are sampled 4 times a second. Improves pulse charging Changes made to charging timeouts The precharge timeout timer runs when the charging current is below a defined threshold; so, it is possible that the precharge timer will run during charging taper current and cause an undesired precharge timeout during charging taper. The fast charge and precharge timeout timers only run when precharging or charging, as indicated by FCHG and PCHG bits in ChargingStatus. Improves operation of fast charge and precharge timeout timers Changes made to discharge faults Discharging fault is indicated whenever BatteryStatus [TDA] is set. Current discharging fault is not indicated for current faults detect by AFE. Separate discharging faults are indicated for voltage and temperature. Discharging fault is indicated for any safety condition resulting in turning off the discharge FET. Current discharging fault is indicated for all detected overcurrent conditions, including overcurrent detected by AFE. Temperature and voltage discharge faults are not indicated separately. Improves indication of discharging fault conditions Improvements made to calibration functions Voltage calibration functions may cause error in voltage calibration of several millivolts. Voltage calibration functions are capable of accuracy within 1 millivolt. Improved voltage calibration accuracy Protect against simultaneous writes to A SMBus-initiated data flash write A SMBus-initiated data flash write data flash may occur at the same time as a data cannot occur at the same time as any flash write initiated by the AGG, which other data flash write. my cause a data flash write error. Increased robustness of data flash writes Corrected SBS.ManufacturerAccess( ) access of SBS.ManufacturerAccess( ) access of silicon revision is not functional. silicon revision SBS.ManufacturerAccess( ) access of Allows host to determine bq20z80 silicon revision is functional. silicon revision Corrected data flash checksum operation The data flash checksum includes non-accessible portions of the data flash that change when writing the data flash checksum, invalidating the checksum. The data flash checksum only includes data flash that does not change when writing an updated data flash checksum. Data flash checksum operation works correctly. Corrections made to LED display Fixed LED thresholds cannot be selected. Fixed LED thresholds can be selected. Correct operation of LED threshold settings Erroneous readings are corrected that Erroneous SBS voltage, current, and occurred after offset calibration when temperature readings occur after sleep mode is not entered. current offset calibration if sleep mode is not entered, corrupting the lifetime data. 24 No erroneous SBS voltage, current, Improve reliability of lifetime data and temperature readings occur after current offset calibration if sleep mode is not entered. Submit Documentation Feedback bq20z80-V102 www.ti.com SLUS681B – NOVEMBER 2005 – REVISED JANUARY 2007 CHANGE bq20z80 bq20z80-V101 COMMENTS Corrected the length of SBS.ManufacturerData( ) command SBS.ManufactureData( ) returned additional data not specified in the data sheet. Only returns the appropriate data Correct data set made available to host Changed DF:Charger Present default voltage to 12000 mV DF:Charger Present default was 16800 mV. Default changed to 12000 mV. More realistic default for most applications Corrected LED display lock-up fault when exiting sleep with LEDs on LED display locks up if LEDs are ON as the bq20z80 exits sleep mode. LED display operates normally regardless of power state transitions. Correct operation of the LED display under all conditions Added report of any inability to write DFF as flash write error in calibration mode If writing the data flash is not allowed either due to a permanent failure or low voltage, then no indication is given when attempting to write data flash in calibration mode. The inability to write data flash in Improved calibration system calibration mode is reported as a flash interaction write error. Corrected issue of improperly clearing AFE faults were detected and the AFE faults pack protected but the fault would be cleared up to three times at an interval of 250 milliseconds before the defined recovery requirements would apply. AFE faults are correctly handled, including the flags. Modified code to save open-circuit OCV data was saved after a full reset voltage (OCV) data on IT enable only, which could have disturbed the OCV not a full reset measurements if the battery was not in a completely relaxed state. OCV tables are only updated when IT Improved OCV data reliability under enabled, or the IT enable command is all system conditions resent. Corrected range check for calibration of analog-to-digital converter (ADC) offset In calibration mode, if the measurement ADC offset was out of range, no error would be reported. In calibration mode, if the measurement ADC offset is out of range, an error is reported. Improved calibration system interaction Implemented a validation time for DOD0 There is a possibility of erroneous DOD0 measurement if charge or discharge current occurs at the same time. DOD0 measurement is not saved unless the battery remains in the relaxed state for a defined time after the DOD0 measurement is made. More reliable SBS.FullChargeCapacity( ) and SBS.RemainingCapacity under all system conditions Implemented a bounds limit to a QMAX change QMAX changes are not limited to filter-bad readings. QMAX changes are bounds limited to filter-bad readings. More reliable SBS.FullChargeCapacity( ) and SBS.RemainingCapacity under all system conditions Implemented a double hit for dv/dt detection for QMAX qualification The dv/dt qualification for QMAX update requires only one sample to be valid. The dv/dt qualification for QMAX update requires two samples to be valid. More reliable SBS.FullChargeCapacity( ) and SBS.RemainingCapacity( ) under all system conditions Corrected parameter update issue caused by exiting sleep mode during current measurement If bq20z80 exits sleep during a current measurement, the SBS parameters do not update again until the pack enters and exits sleep mode again. SBS parameter updates operate normally regardless of power state transitions. Improved system interaction for sleep mode transitions Implemented an option to leave charge FET on for a nonremovable pack in sleep mode, enabled by DF:Operation Cfg B [NRCHG]. When DF:Operation Cfg B [NR] is set, When DF:Operation Cfg B [NR, then the CHG is turned off at entry to NRCHG] are set, then the CHG sleep mode. remains on at entry to sleep mode. Improved system interaction options Modified code such that if QMAX has not been updated, old valid OCV readings are discarded when a new valid OCV reading is detected and the conditions for QMAX update do not exist. Valid OCV is only discarded when all conditions for QMAX update are satisfied, but the accumulated error in the measured capacity exceeds 1% (default value). If QMAX has been updated, the same conditions for discarding an OCV reading are the same as for the bq20z80. Otherwise, old OCV readings are discarded and new OCV readings are used when the conditions for a valid OCV reading exist, but the conditions for QMAX update do not exist. Enables QMAX measurement for full charge or discharge for the first QMAX update, even if initial OCV measurement is made when battery is only partially charged. Modified code such that if QMAX has not been updated, then for QMAX update to occur, the measured capacity must be greater than or equal to 90% (default value) of design capacity. The measured capacity must be greater than 20% (default value) or a value as determined from the QMAX update filter constant for a QMAX update to occur. For the first QMAX, the measured capacity must be greater than 90% (default value) for a QMAX update to occur. If QMAX update has occurred the conditions for measured capacity are the same as for the bq20z80. Improved QMAX data reliability for the first update of QMAX Default minimum passed charge for QMAX update has been changed from 20% to 37% Internal flash value of Min Passed Charge is 20%. The default setting for the QMAX update filter constant of 64 means actual Min Passed Charge for QMAX update is 25%. Internal flash value of Min Passed Charge is 37%. This 37% is consistent with the QMAX update filter constant of 96. Improved QMAX data reliability under all system conditions. Default QMAX update filter constant has been changed from 64 to 94. Internal flash value of QMAX update filter is 64. Internal flash value of QMAX update filter is 94. Improved QMAX data reliability under all system conditions. DF:Qmax Cell 2..4 are updated to = DF:Design Capacity if not used when QMAX is updated. Ensure all QMAX values are reasonable, even if not used QMAX values for nonexistent cells will DF:Qmax Cell 2..4 written with be updated to Design Capacity. random values if not used when QMAX is updated Submit Documentation Feedback Improved system interaction when faults occur 25 PACKAGE OPTION ADDENDUM www.ti.com 13-Mar-2008 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BQ20Z80DBT-V102 NRND TSSOP DBT 38 BQ20Z80DBTR-V102 NRND TSSOP DBT BQ20Z80DBTR-V102G4 NRND TSSOP BQ20ZDBT-V102G4 NRND BQ20ZDBTR-V102G4 NRND 50 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 38 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR DBT 38 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TSSOP DBT 38 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TSSOP DBT 38 TBD Call TI 50 Call TI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. 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