PHOTOMULTlPLlER TUBE R1767 S-1 Spectral Response, High Infrared Sensitivity (QE0.08% at 1.06 µm) 38mm(1-1/2 Inch) Diameter, 10-Stage, Head-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Base SuitabIe Socket Description/Value 400 to 1200 800 Ag–O–Cs 34 Borosilicate glass Circular–cage 10 12–pin base JEDEC No. B12–43 E678–12A (supplied) Unit nm nm mm dia. MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Parameter Between Anode and Cathode Between Anode and Last Dynode Avarage Anode Current Ambient Temperature CHARACTERISTlCS (at 25 Cathode Sensitivity Anode Sensitivity Unit Vdc Vdc mA °C Value 1500 250 0.01 -30 to +50 ) Parameter Luminous (2856K) Radiant at 800nm Red/White Ratio (Toshiba IR–D80A filter) Quantum Efficiency at 1.06 m Luminous (2856K) Radiant at 800nm Min. 10 Typ. 25 2.4 Max. Unit A/lm mA/W 0.14 1 Gain Anode Dark Current (at 4 A/lm) Anode Pulse Rise Time Time Response Electron Transit Time 0.08 5 480 2 105 7000 2.2 37 % A/lm A/W 20000 nA ns ns NOTE: Anode characteristics are measured with the voItage distribution ratio shown below. VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Electrodes Ratio 2 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode P Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBE R1767 Figure 1: Typical Spectral Response CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 TPMHB0288EA CATHODE RADIANT SENSITIVITY 10 1 QUANTUM EFFICIENCY 0.1 0.01 200 400 600 800 1000 WAVELENGTH (nm) Figure 2: Dimensional Outline and Basing Diagram (Unit: mm) Socket 38 1 (E678 – 12A) 34MIN. 47 PHOTOCATHODE 40 17 DY10 P 6 DY9 7 5 DY8 8 DY7 4 9 DY6 10 DY4 99 2 12 PIN BASE JEDEC No. B12-43 116MAX. DY5 3 DY3 11 2 1 DY1 12 DY2 K BOTTOM VIEW (BASING DIAGRAM) 2- 3.2 34 8 5 TPMHA0228EA 15 FACEPLATE TACCA0009EB 37.3 0.5 HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 TPMH1116E02 DEC. 1999