MICROWAVE CORPORATION HMC216MS8 v01.0801 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 is ideal for: IP3 (Input): +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB • PCMCIA LO / RF Isolation: 32 dB • Portable Wireless Functional Diagram General Description 12 MIXERS - SMT The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface mount package (MSOP). This MMIC mixer is constructed of switched GaAs FETs and novel planar transformer baluns on the chip. In addition to an LO drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9 to -1.6 Vdc is required. The device can be used as an upconverter or downconverter for 1900 or 2400 MHz applications. The consistent MMIC performance will improve system operation and assure regulatory compliance. Electrical Specifications, TA = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc LO = +11 dBm LO = +7 dBm LO = +3 dBm Parameter Units Min. Frequency Range, RF & LO Frequency Range, IF 12 - 54 Typ. Max. Min. Typ. Max. Min. Typ. Max. 1.3 - 2.5 1.6 - 2.3 1.7 - 2.0 GHz DC - 0.65 DC - 0.5 DC - 0.4 GHz Conversion Loss 9 10.5 8.5 10 9 10.5 dB Noise Figure (SSB) 9 10.5 8.5 10 9 10.5 dB LO to RF Isolation 27 30 27 32 27 32 dB LO to IF Isolation 17 20 17 20 17 20 dB IP3 (Input) 21 25 14 18 8 12 dBm 1 dB Gain Compression (Input) 8 11 5 10 3 8 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC216MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Conversion Loss vs Temperature @ LO = +7 dBm Isolation @ LO = +7 dBm -6 0 -40 C -10 +25 C -10 RF/IF ISOLATION (dB) -12 -14 +85 C -16 -20 -30 LO/IF LO/RF -40 -18 -50 -20 -22 -60 1 1.5 2 2.5 3 1 1.5 FREQUENCY (GHz) Conversion Loss vs. LO Drive 3 0 LO -5 -5 +11 dBm RETURN LOSS (dB) CONVERSION LOSS (dB) 2.5 Return Loss @ LO = +7 dBm 0 +9 dBm -10 +5 dBm -15 RF -10 -15 IF -20 +7 dBm +3 dBm 12 -25 -20 1 1.5 2 2.5 0 3 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature for LO = +7 dBm, Vgg = -1.2 Vdc IF Bandwidth @ LO = +7 dBm 0 14 -5 12 P1dB (dBm) CONVERSION LOSS (dB) 2 FREQUENCY (GHz) MIXERS - SMT CONVERSION LOSS (dB) -8 -10 -15 -40 C 10 8 +25 C +85 C 6 -20 4 -25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 IF FREQUENCY (GHz) 1.6 1.8 2 2 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 55 HMC216MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Input IP3 vs. Temperature and Vgg for @ LO = +7 dBm Input IP3 vs. LO Drive and Vgg 25 +11 dBm +9 dBm 20 +7 dBm 15 +5 dBm 10 -1.6 -1.5 -1.3 -1.2 -1.1 -0.9 22 -40C 21 20 +25C 19 18 17 +85C 16 15 -1.6 -0.8 -1.5 -1.3 GATE VOLTAGE (V) -1.2 -1.1 -0.9 -0.8 GATE VOLTAGE (V) Input IP2 vs. Temperature and Vgg for @ LO = +7 dBm MIXERS - SMT 12 23 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) 30 SECOND ORDER INTERCEPT (dBm) 60 55 50 +85C 45 40 +25C 35 30 -40C 25 20 -1.6 -1.5 -1.3 -1.2 -1.1 -0.9 -0.8 GATE VOLTAGE (V) MxN Spurious Outputs Harmonics of LO nLO mRF 0 1 2 3 4 0 xx -1 14 24 40 1 14 0 28 21 46 2 45 45 59 55 50 3 83 67 62 59 77 4 >105 >105 >105 85 96 RF = 1.975 GHz @ -10 dBm LO = 1.8 GHz @ +7 dBm, Vgg = -1.2V All values in dBc below IF power level (-1RF + 1LO). 12 - 56 nLO Spur at RF Port LO Freq. (GHz) 1 2 3 4 1.5 41 47 61 78 1.7 38 47 72 71 1.9 34 41 69 72 2.1 31 37 72 79 2.3 29 38 74 74 2.5 32 45 65 74 LO = +7 dBm, Vgg = 1.2V Values in dBc below input LO level measured at the RF port. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC216MS8 v01.0801 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 12 MIXERS - SMT Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 57 MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Evaluation Circuit Board MIXERS - SMT 12 List of Material Item Description J1 - J3 PC Mount SMA RF Connector J4, J5 DC Pin U1 HMC216MS8 Mixer PCB* 102035 Evaluation Board * Circuit Board Material: Rogers 4350 12 - 58 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC216MS8 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Notes: MIXERS - SMT 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 12 - 59