NPN SILICON TRANSISTORS MJ13335 HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ ℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO IC PC Tj Tstg 800 500 20 175 200 -50~150 V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ ℃) Characteristic Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Symbol ICBO ICEO hFE VCE(sat) VBE(sat) Test Condition VCB= 800V , IE=0 VCB= 500V , IB=0 VCE= 5V , IC=5.0A IC=10A , IB=2A Min Typ 10 Ic=10A, IB=2A Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] Max Unit 250 250 µA µA 60 1.8 1.8 V