VOIS (CHINA) LTD RB751G-40 SOD-723 Schottky barrier Diodes FEATURES zSmall surface mounting type zLow reverse current and low forward voltage zHigh reliability MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25Я Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA IFSM 200 mA Junction temperature Tj 125 Я Storage temperature Tstg -40~125 Я Peak forward surge current Electrical Ratings @TA=25Я Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 A VR=30V Capacitance between terminals CT pF VR=1V,f=1MHZ 2 Typical Characteristics RB751G-40