ETC RB751G-40

VOIS (CHINA) LTD
RB751G-40
SOD-723
Schottky barrier Diodes
FEATURES
zSmall surface mounting type
zLow reverse current and low forward voltage
zHigh reliability
MARKING: 5
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25Я
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
30
V
Mean rectifying current
IO
30
mA
IFSM
200
mA
Junction temperature
Tj
125
Я
Storage temperature
Tstg
-40~125
Я
Peak forward surge current
Electrical Ratings @TA=25Я
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
VF
0.37
V
IF=1mA
Reverse current
IR
0.5
­A
VR=30V
Capacitance between terminals
CT
pF
VR=1V,f=1MHZ
2
Typical Characteristics
RB751G-40