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C 2 C1 + C 2 ZKHUH 9287 LVWKHRXWSXWYROWDJHPHDVXUHGUHODWLYHWR$*1' && DUHWKHDVVRFLDWHGFDSDFLWDQFHVRIWKHFRQQHFWHGVHQVRU 9R LVKDOIWKHVXSSO\YROWDJH 9''966$W\SLFDOO\9 %DQGZLGWKFRQWURO 7KH WUDQVIHU IXQFWLRQ RI WKH FLUFXLW FDQ EH FKDUDFWHULVHG DV D ILUVW RUGHU ORZ SDVV ILOWHU 7KH EDQGZLGWK RI WKH HTXLYDOHQWILOWHUPD\EHSURJUDPPHGE\LQVHUWLQJDQRSWLRQDOH[WHUQDOFDSDFLWDQFH&IH[WEHWZHHQSLQ90DQGSLQ &) C0 = 50 pF 100000 C0 = 35 pF 10000 C0 = 25 pF 1000 100 10 0 Cfext (pF) Fig.2: Band-width in function of external capacitance $QH[DFWYDOXHIRUWKHEDQGZLGWKIF+]FDQEHFDOFXODWHGIURPWKHIROORZLQJHTXDWLRQ fc = fs ⋅ π 2 .77 ⋅ ( 1 37 +Cfext Co )−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⋅ (VDD −VSS )⋅ C1 − C 2 C1 + C 2 7KH GHIDXOW JDLQ IDFWRU RI LQYHUWLQJ DPSOLILHU EHWZHHQ WKH RXWSXW 90 DQG 9287 FDQ EH PRGLILHG E\ FRQQHFWLQJUHVLVWRUV5DQG5LQSDUDOOHOZLWKLQWHJUDWHGUHVLVWRUV5LQWDQG5LQWUHVSHFWLYHO\5LQW NΩ VHH)LJEHORZ ,IWKHQRPLQDOJDLQIDFWRULVGHQRWHGE\*120WKHQWKHPRGLILHGJDLQ*02'IDFWRUFDQEHIRXQGDV 1+ α 2 β + 1+ α1 ⋅ GMOD = GNOM ⋅ 1+ α1 β + 1+ α 2 β β ≈ GNOM ⋅ 1+ α2 − α β +1 β + 1 1 ZKHUH β 5LQW5 α1LVWKHUHODWLYHFKDQJHLQ5 α 2 LVWKHUHODWLYHFKDQJHLQ5 5 5 α 1 2 5 5 α 5LVWKHQRPLQDOYDOXHRIWKHH[WHUQDOUHVLVWRU5 7KHSUHFLVLRQREWDLQHGGHSHQGVRQWKHSUHFLVLRQRIWXQLQJ5DQGRU57KHPD[LPXPYDOXHVIRU α DQG α 1 DUH 7\SLFDOYDOXHFRXOGEHNΩIRU5DQGNΩIRU5(β=10). 2 ;( &DSDFLWLYH6HQVRU,QWHUIDFH&LUFXLW BBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBB 7KLVIHDWXUHLVPDLQO\XVHGIRUDGMXVWPHQWRIWKHJDLQRIDPRGXOHFRQWDLQLQJDVHQVRUDQGWKH;(FLUFXLW VDD 10 µF +100nF VGND 10 µF +100nF VSS VSS VOUT VM R1 . OR (optional) VDD 10 µF +100nF VGND 10 µF +100nF VSS + - 1 VSSD 2 NC NC 15 3 VOUT C1 14 4 VM 5 GAIN 6 CF R2 CF 5V VDD 16 CSEM 2003D + + 2.5 V - 2.5 V VDD CM 13 C1 C2 12 C2 VSSA 11 capacitive sensor VSS VDD 7 NC 100 kΩ 8 NC 10 OFADJ AGND 9 VGND VSS Fig. 4: Connection of XE2003D circuit in DIL16 version with gain and offset adjustment XEMICS SA, 2000 All rights reserved. Reproduction whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. The publisher for any consequence of its use will accept no liability. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in Switzerland ' Date of release: 10 - 00