ETC IRL830S

Bay Linear
Linear Excellence
IRF830
POWER MOSFET
Advance Information
Description
Features
The Bay Linear MOSFET’s provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
•
•
•
•
•
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
VDSS = 500V
RDS (ON) = 1.5 Ω
ID = 4.5A
Ordering Information
Device
IRL830T
IRL830S
Package
Temp.
TO-220
TO-263 ( D2 )
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Parameter
[email protected] TC =25°°C
[email protected] TC =100°°C
IDM
PD @ TC =25°°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @10V
Continuous Drain Current, VGS @10V
Pulsed Drain Current (1)
Power Dissipation
Linear Derating Factor
Linear Derating Factor ( PCB Mount, D2 ) (1)
Gate-to- Source Voltage
Single Pulse Avalanche Energy (2)
Avalanche Current (1)
Repetitive Avalanche Energy (1)
Peak Diode Recovery dv/dt (3)
Junction & Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
Unit
4.5
2.9
18
74
0.59
0.025
±20
280
4.5
7.4
3.5
−55 to +150
300 (1.6mm from case)
A
W
W/°°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Bay Linear, Inc
Parameter
Min
Typ
Max
Junction-to Case
Case-to-Sink, Flat, Greased Surface ( TO-220)
Junction-to Ambient ( PCB Mount, D2 )
Junction-to Ambient
-
0.50
1.7
-
-
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
40
62
Units
°C/W
www.baylinear.com
IRF830
Electrical Characteristics ( TC =
Symbol
Parameter
VGS(TH)
Drain-to-source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
On-State Drain Current
(note 2)
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage
Current
V(BR)DSS
V(BR)DSS /
∆TJ
ID(ON)
RDS(ON)
td ( on)
Tr
td (off)
Tf
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”)
Charge
Turn-On Delay Time
Rise Time
Turn -Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Qg
Qqs
Qgd
25°°C unless otherwise specified)
Conditions
Min
VGS = 0V, ID = 250µA
500
Reference to 25°C,
ID = 1mA
-
Typ
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V,
TC= 125°C
0.61
V/°°C
4.5
A
1.5
Ω
-
4.0
V
2.5
-
-
S
25
-
-
µA
-
-
250
100
VG = -20V
nA
-100
-
-
38
5.0
VGS = 10V (note 4)
VDD = 250V
ID = 3.1.1A
RG = 12Ω
RD = 79Ω (note 4)
Between lead 6mm (0.25in.)
from package and center or die
contact
VGS = 0V
VDS = 25V
F = 1.0MHZ
-
2.0
VGS = 20V
ID =3.1A
VDS = 400V
Units
V
VGS > ID(ON) x RDS(ON)Max
VGS =10V, ID = 2.7A
(note 4)
VDS = VGS, ID = 250µA
VDS = 50V, ID = 2.7A
Max
nC
22
-
8.2
16
42
16
-
4.5
-
7.5
610
160
68
-
ns
nH
pF
Source-Drain Rating Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
ton
Parameter
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) (Note 1)
Diode Forward Voltage (note 4)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol showing the
integral reverse p-n junction
diode.
Min Typ
Max Units
-
-
4.5
-
-
18
A
1.6
V
TJ=25°C, IS=2.5A,VGS=DV
°
320
640
ns
TJ=25 C, IF=2.1A
1.0
2.0
µC
di/dt=100A/µs (Note 4)
Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2. VDD = 50V, starting Tj = 25°C, L = 24 mH RG = 25Ω, IAS = 4.5A
3. ISD ≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com