ETC ISP321-1

ISP321-1-88XSM
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : - STD
- G form
- SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
Dimensions in mm
2.54
1
2
7.0
6.0
4
3
1.2
5.08
4.08
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
3.35
0.26
DESCRIPTION
The ISP321-1-88XSM is an optically coupled
isolator consisting of infrared light emitting
diodes and NPN silicon photo transistors in a
space efficient dual in line plastic package.
FEATURES
l
Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Current Transfer Ratio ( 80 - 400% )
l
High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l
High BVCEO ( 80Vmin )
l
All electrical parameters 100% tested
l
External Creepage ≥ 7mm
APPLICATIONS
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
1.2
0.6
10.2
9.5
1.4
0.9
7.62
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail [email protected]
http://www.isocom.com
19/11/99
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92740-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
80V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.0
5
1.15
Collector-emitter Breakdown (BVCEO)
80
( Note 2 )
Emitter-collector Breakdown (BVECO)
6
Collector-emitter Dark Current (ICEO)
IF = 10mA
IR = 10µA
VR = 5V
V
IC = 0.5mA
100
V
nA
IE = 100µA
VCE = 48V
400
%
5mA IF , 5V VCE
0.4
V
8mA IF , 2.4mA IC
VRMS
VPK
See note 1
Ω
µs
µs
µs
µs
VIO = 500V (note 1)
VCC = 10V ,
IC = 2mA, RL = 100Ω
Current Transfer Ratio (CTR) (Note 2)
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage VISO
5300
7500
Input-output Isolation Resistance RISO 5x1010
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
19/11/99
V
V
µA
10
80
Note 1
Note 2
1.3
TEST CONDITION
2
3
3
3
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92740-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
TA = 25°C
25
Collector current I C (mA)
Collector power dissipation P C (mW)
200
150
100
50
0
15
50
40
30
20
10
10
5
20
5
IF = 2mA
0
-30
0
25
50
75
100
0
125
Ambient temperature TA ( °C )
0.2
50
50
Collector current I C (mA)
Forward current I F (mA)
1.0
TA = 25°C
30
50
40
30
20
10
0
20
40
15
30
10
20
10
IF = 5mA
0
-30
0
25
50
75
100
125
0
Ambient temperature TA ( °C )
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
Current Transfer Ratio vs. Forward Current
320
0.28
280
0.24
Current transfer ratio CTR (%)
CE(SAT)
0.8
Collector Current vs. Collector-emitter Voltage
60
Collector-emitter saturation voltage V
0.6
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
IF = 5mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
240
200
160
120
80
VCE = 5V
TA = 25°C
40
0
0
-30
0
25
50
75
Ambient temperature TA ( °C )
19/11/99
0.4
100
1
2
5
10
20
50
Forward current IF (mA)
DB92740-AAS/A1