Photocoupler K4N28 These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. (Unit : mm) 7.62 FEATURES 6 6.4 0.25 1 0 -15 0.25 MAXIMUM RATINGS Reverse Voltage VR 5 V IFP 3 A PD 150 Power Dissipation Rating 80 *4 mW Collector-Emitter Breakdown Voltage BVCEO 35 Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage BVECO 70 V IC 50 mA Collector Current Collector Power Dissipation Input to Output Isolation Voltage *2 Storage Temperature Operating Temperature *3 Total Power Dissipation 0.25 (Ta=25℃ ) Unit mA Symbol IF Peak Forward Current 5 4 1 2 3 0.5 2.54 Parameter Forward Current *1 6 0.51Min. 2.7Min. • Traffic Controller System • Programmable Controller Lead Soldering Temperature 3 0.25 3.8 • Interface between two circuits of different potential • Vending Machine, Voltage Regulator Output 2 8.9 Orientation Mark APPLICATIONS Input 0.25 6.4 4 0.25 • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) • Electrical Isolation Voltage : AC2500Vrms • UL Recognized File No. E107486 5 V PC 150 mW Viso AC2500 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec *4. Customer Option 1/3 1.2 Photocoupler K4N28 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol (Ta=25℃ , unless otherwise noted) Min. Max. Unit. Typ. Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 ㎂ Capacitance CT V=0, f=1MHz - 30 - pF 35 - - V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage BVCBO IC=0.1mA 70 - - V - - 100 nA Collector Dark Current Capacitance Current Transfer Ratio *5 Collector-Emitter Saturation Voltage Coupled Condition Input-Output Capacitance ICEO IF=0, VCE=10V - 10 - pF 10 - - % IF=50mA, IC=1mA - 0.15 0.4 V V=0, f=1MHz - 1 - pF CCE VCE=0, f=1MHz CTR IF=10mA, VCE=10V VCE(SAT) CIO RH=40~60%, V=500V - 10 - Ω Rise Time tr VCE=5V, RL=100 - 3 - ㎲ Fall Time tf IC=2mA - 3 - ㎲ Input-Output Isolation Resistance RIO *5. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler K4N28 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta ( ℃ ) Dark Current I CEO (㎂) Collector current I C (mA) 40 20 60 80 I F=20mA P C (MAX.) I F =5mA 10 Ta=-55℃ 0.4 100 0.8 1.2 1.6 Forward Voltage VF (V) Collector Current vs. Ambient Temperature 100 I F=30mA I F=10mA 20 0 0 1 20 T a=25℃ Dark Current vs. Ambient Temperature T a=25℃ 30 Ta=70℃ 40 Ambient Temperature Ta ( ℃ ) Collector Current vs. Collector-Emitter Voltage 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 0.1 V CE =10V 0.01 I F=20mA 10 I F=10mA I F=5mA 1 I F=1mA I F=1mA 0 2 4 6 8 10 0.001 0 Collector-Emitter voltage VCE (V) 100 Collector Current I C (mA) Response Time tr , t f (μ s) 100 tr 60 80 100 tf 1 0 -20 0 20 40 60 Switching Time Test Circuit R VIN VCC RL T a=25℃ V CE =10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1.0 Load Resistance R L (㏀ ) 2.0 0.001 0.1 80 Ambient Temperature Ta (℃ ) Collector Current vs. Forward Current VCE =5V I C=2mA T a=25℃ 10 40 Ambient Temperature Ta (℃ ) Response Time vs. Load Resistance 500 20 1 10 Forward Current I F (mA) 3/3 100 90% tr tf Waveform