Photocoupler K4N38 •K4N38A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. (Unit : mm) 7.62 5 4 1 2 3 0.25 6.4 0.25 FEATURES 6 6.4 • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.80V 0.25 • Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) 8.9 Orientation Mark • Electrical Isolation Voltage : AC2500Vrms 0.25 • UL Recognized File No. E107486 0 3.8 PIN NO. AND INTERNAL CONNECTION DIAGRAM • Interface between two circuits of different potential 0.25 4 1 2 3 1.2 • Traffic Controller System • Programmable Controller MAXIMUM RATINGS Parameter (Ta=25℃ ) Symbol Rating Unit Forward Current IF 60 mA Reverse Voltage VR 5 V IFP 3 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 80 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage BVCBO 80 V IC 100 mA Peak Forward Current *1 Power Dissipation Collector Current PC 150 mW Input to Output Isolation Voltage*2 Viso AC2500 Vrms Storage Temperature Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Collector Power Dissipation Operating Temperature Lead Soldering Temperature 5 0.5 2.54 • Vending Machine, Voltage Regulator Output 6 0.51Min. 2.7Min. APPLICATIONS Input -15 0.25 *3 Total Power Dissipation *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 Photocoupler K4N38 •K4N38A ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol (Ta=25℃ , unless otherwise noted) Min. Max. Unit. Typ. Forward Voltage VF IF=10mA - Reverse Current IR VR=5V Capacitance CT V=0, f=1MHz 1.15 1.30 - - 10 ㎂ - 30 - pF 80 - - V V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage BVCBO IC=0.1mA 70 - - V - - 50 nA Collector Dark Current Capacitance Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition Input-Output Capacitance ICEO IF=0, VCE=10V CCE VCE=0, f=1MHz - 10 - pF CTR IF=10mA, VCE=10V 10 - - % VCE(SAT) IF=10mA, IC=0.5mA - 0.15 0.3 V V=0, f=1MHz - 1 - pF CIO RH=40~60%, V=500V - 10 - Ω Rise Time tr VCE=10V, RL=100Ω - 3 10 ㎲ Fall Time tf IC=2mA - 3 10 ㎲ Input-Output Isolation Resistance RIO *4. CTR=(IC/IF) X 100 (%) 2/3 11 Photocoupler K4N38ㆍK4N38A Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta (℃ ) Dark Current I CEO (㎂) Collector Current I C (mA) I F =20mA I F =10mA I F =5mA I F =1mA 0 2 4 6 8 10 0 20 40 60 80 100 1 I F =20mA 10 I F =10mA I F =5mA 1 I F =1mA 0 -20 0 20 40 60 R VIN VCC RL Ta=25℃ VCE=10V VO 10 1 Test Circuit 0.1 Input 0.01 0.1 1.0 Load Resistance R L (㏀) 5.0 0.001 0.1 80 Switching Time Test Circuit Output 10% 0.1 1.6 Ambient Temperature Ta (℃ ) Collector Current vs. Forward Current tf tr 1.2 Collector Current vs. Ambient Temperature Ambient Temperature Ta (℃ ) VCE=10V I C =2mA Ta =25℃ 0.8 Forward Voltage VF (V) VCE =10V 100 10 Ta=-55℃ 0.4 100 0.01 0.001 Collector Current I C (mA) Response Time t r , t f (μs) 80 0.1 Response Time vs. Load Resistance 100 60 100 Collector-Emitter Voltage VCE (V) 500 40 20 I F =30mA 10 20 0 0 1 20 Ta=25℃ Dark Current vs. Ambient Temperature Ta=25℃ 30 Ta=70℃ 40 Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 1 10 Forward Current I F (mA) 3/3 100 90% tr tf Waveform