KODENSHI KIT

Photointerrupter(Transmissive)
KIT-1001A
DESCRIPTION
DIMENSIONS
The photointerrupter high-performance standard type
KIT-1001A combines a high-output GaAs IRED with
a high sensitivity phototransistor.
FEATURES
• PWB direct mount type
• GAP : 1.0mm
• Ultra - compact
APPLICATIONS
• Cameras
• Floppy disk drives
• Encoders
ABSOLUTE MAXIMUM RATINGS
Rating
Unit
IF
50
mA
IFP
0.5
A
Forward Current
Input
Output
Pulse Forward Current
(Ta=25℃)
Symbol
Parameter
*1
Reverse Voltage
VR
5
V
Power Dissipation
PD
75
mW
Collector Emitter Voltage
VCEO
30
V
Emitter Collector Voltage
VECO
5
V
Collector Current
IC
20
mA
Collector Power Dissipation
PC
75
mW
TOPR
-20 ~ +85
℃
TSTG
-30 ~ +100
℃
TSOL
260
℃
Operating Temperature
Storage Temperature
*2
*2
Soldering Temperature
*3
*1. Pulse width : tw≤100μsec.period : T=10msec
*2. No icebound or dew
*3. For MAX. 5 seconds at the position of 1mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Output
MIN.
TYP.
MAX.
Unit
-
1.2
1.4
V
IF=20mA
Reverse Current
IR
VR=5V
-
-
10
μA
Peak Wavelength
λP
IF=20mA
-
940
-
nm
1
100
nA
VCE=5V, IF=10mA (Non-shading)
0.5
-
-
mA
IL2
VCE=5V, IF= 5mA (Non-shading)
0.2
-
-
mA
μA
ICEOD
Leakage Current
Collector Emitter Saturation Voltage
Response Time
-
IL1
ICEO
Dark Current
Light Current (Collect Current)
Coupled
Conditions
VF
Forward Voltage
Input
(Ta=25℃)
Symbol
VCE(SAT)
Rise Time
tr
Fall Time
tf
VCE=10V, 0lx
VCE=5V, IF=10mA (shading)
-
0.5
10
IF=10mA, IC=0.3mA
-
0.15
0.4
V
VCE=5V, IC=1mA,
RL=100Ω
-
10
-
µs
-
10
-
µs
1/2
Photointerrupter(Transmissive)
KIT-1001A
VCE=5V
Ta=25℃
0
5
Light current Vs.
Collentor-Emitter voltage
4
IF=40㎃
3
IF=30㎃
2
IF=20㎃
1
IF=10㎃
0
0
0
Relative light current Vs.
Ambient temperature
VCE=5V
IF=20㎃
100
50
0
0
-20 0 20 40 60 (℃)
Ambienttemperature(Ta)
temperature( Ta )
Ambient
Switching time Vs.
Load resistance
Relative light current Vs.
Moving distance
(㎲)
VCE=5V
IC=2㎃
Ta=25℃
102
101
tf
tr
10 2
10 3
10 4 (Ω)
Load Resistance( RL )
Road Resistance(R L )
Relative
light
current(I
Relative
light current(
IL) L)
10
(%) X
3
3
2
1
0
0.5 1.0 1.5 2.0 (V)
Forward
Forwardvoltage(V
voltage( VFF))
(%)
2 4 6 8 10 12 (V)
Collector-Emitter Voltage( VCE )
Collector-Emitter Voltage(VCE)
4
L
50
0
20
40
60
80 (℃)
Ambient
Ambienttemperature(Ta)
temperature(Ta)
IF=50㎃
100
Light
Current(IL )
Light Current( I )
50
Ta=25℃
L
(㎃)
Y
VCE=5V
IF=20㎃
Ta=25℃
100
0
10
20
30
40 (mA)
Forward
ForwardCurrent(I
Current( IFF))
Dark current Vs.
Ambient temperature
(nA)
Collector dark
current(
I CEO ) CEO )
Collector
dark
current(I
Forward
current( I FF))
Forward
current(I
100
(㎃)
Response
time
tr,
Response
time tr,
tf tf
Light current Vs.
Forward current
Ta=25℃
0
Light
Current(IL )
Light Current( I )
(㎃)
L)
Relative
light
current(I
Relative
light current(
I L)
Power
dissipation(P
C)
Power dissipartion(
P C)
(㎽)
Forward current Vs.
Forward voltage
VCE=10V
102
101
100
10-1
0
20
40
60
80 100 (℃)
Ambient temperature(
Ta )
Ambient
temperature(Ta)
Response
measurement
circuit
Response
timetime
measurement
circuit
VCC
Input
VCE=5V
IF=20㎃
Ta=25℃
IC
RL
VOUT
Input
90%
10%
Output
td
tr
50
tf
Method
ofofmeasuring
position
Method
measuring position
detection
characteristic
detection characteristic
Optical Axis(X)
Optical
Axis(X)
0
-2
0 +2
-2 0
Moving distance( L )
Moving
distance(L)
2/2
+2 (mm)
-
0
+
Optical
Axis(Y)
Optical Axis(Y)
Collector power dissipation Vs.
Ambient temparature