DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V • DC Current Gain hFE = 70 to 200 • TO-3P Package 1 Type Number Package 2SA1988 MP-88 2 3 19 MIN. 3.4MAX. ORDERING INFORMATION 1.5 4.5±0.2 FEATURES 4.7 MAX. φ 3.2±0.2 15.7 MAX. 2.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO −200 V Collector to Emitter Voltage Emitter to Base Voltage VCEO VEBO −200 −5.0 V V Collector Current (DC) Collector Current (pulse) IC (DC) IC (pulse) *1 −7.0 -10 A A Total Power Dissipantion JunctionTemperature P2 *2 TJ 100 150 W °C −55 to +150 *2 TC = 25 °C Storage Tempreature Tstg *1 PW ≤ 300 µs, Duty Cycle ≤ 10 % 1.0±0.2 0.6±0.1 5.45 5.45 MP-88 2.8±0.1 1.Base 2.Collector 3.Emitter 4.Fin (Collector) °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL Collector Cutoff Current MIN. TYP. ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 70 DC Current Gain hFE2 20 MAX. UNIT −50 µA VCB = −200 V, IE = 0 −50 µA VEB = −3.0 V, IC = 0 200 − VCE = −5.0 V, IC = −1.0 A ∗ − VCE = −5.0 V, IC = −3.5 A ∗ V IC = −5.0 V, IE = −0.5 V ∗ V IC = −5.0 V, IE = −0.5 V ∗ Collector Saturation Voltage VCE (sat) −0.6 −2.0 Base Saturation Voltage VBE (sat) −1.3 −2.0 Gain Band width Product fT 40 MHz Cob 270 pF Output Capacitance ∗ TEST CONDITIONS VCE = −5.0 V, IC = 1.0 mA VCB = −10 V, IC = 0, f = 1.0 MHz Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2 % The information in this document is subject to change without notice. Document No. D11176EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan © 1996 2SA1988 CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 S/b 60 Di Lim ited ss ipa tio n 40 Lim ite d 20 0 50 100 120 100 80 60 40 20 0 150 TC - Case Temperature - °C IC - Collector Current - A =1 ss m ipa tio n s 10ms 100ms 200ms Lim ite d -1 im bL S/ IC - Collector Current - A PW Di 100 120 140 160 -12 IB=120mA -10 100mA Pulsed 80mA -8 60mA -6 40mA -4 20mA d -0.1 -1 80 -2 ite TC = 25 °C Single Pulse 60 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -100 -10 40 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA IC(Pulse) IC(DC) 20 -10 -100 -1000 0 VCE - Collector to Emitter Voltage - V -20 -10 -30 VCE - Collector to Emitter Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 100 10 Rth (J-C) 1 0.1 0.01 100 µ Single Pulse TC=25°C 1m 10 m 100 m 1 PW - Pulse Width - s 2 10 100 1 000 2SA1988 COLLECTOR SATURATION VOLTAGE AND BASE SATURATION VOLTAGE VS COLLECTOR CURRENT 1.0 0.1 TA=-25°C 25°C 75°C 150°C VBE (sat) TA= 150°C 75°C 25°C -25°C 0.01 0.01 1 000 IC=10IB Pulsed hFE - DC Current Gain VCE - Collector Saturation voltage - V VBE - Base Saturation Voltage - V 10 DC CURRENT GAIN VS COLLECTOR CURRENT VCE (sat) 0.1 1.0 10 IC - Collector Current - A VCE =-5V Pulsed TA = 150°C 75°C 25°C -25°C 100 10 -0.01 -0.1 -1.0 -10 IC - Collector Current - A OUTOPUT CAPASITANCE VS COLLECTOR TO BASE VOLTAGE Cob - Output Cpacitance - pF IE=0 f=1MHz 1 000 100 10 -0.1 -1.0 -10 -100 -1000 VCB - Collector to Base Voltage -V REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Semoconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 3 2SA1988 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11