NEC 2SC2570A

DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
• Wide dynamic range
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
IC
70
mA
Ptot
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Collector Current
Total Power Dissipation
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1980, 1999
2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
MIN.
TYP.
MAX.
Unit
VCE = 10 V, IC = 20 mA
40
–
200
–
VCE = 10 V, IC = 20 mA
–
5.0
–
GHz
VCB = 10 V, IE = 0, f = 1.0 MHz
–
0.7
0.9
pF
|S21e|
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
8
10
–
dB
NF
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
–
1.5
3.0
dB
Maximum Available Gain
MAG
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
–
11.5
–
dB
Collector Cutoff Current
ICBO
VCB = 15 V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2.0 V, IC = 0
–
–
0.1
µA
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Symbol
hFE
Note 1
fT
Note 2
COb
2
Test Conditions
Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2
Data Sheet P10404EJ3V0DS00
2SC2570A
TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation PT (mW)
600
free Air
400
200
0
50
100
150
Operating Ambient Temperature TA (°C)
200
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
VCE = 10 V
VCE = 10 V
Collector Current IC (mA)
DC Current Gain hFE
100
50
20
10
5
1
10
0.5
1
5
10
Collector Current IC (mA)
0.5
0.5
50
INSERTION GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
15
VCE = 10 V
f = 1.0 GHZ
VCE = 10 V
Insertion Gain S21e 2 (dB)
Gain Bandwidth Product fT (GHZ)
5
0.9
0.6
0.7
0.8
Base to Emitter Voltage VBE (V)
2
1
0.5
10
5
0.2
0.1
0.5
1
10
5
Collector Current IC (mA)
50 70
0
0.5
Data Sheet P10404EJ3V0DS00
1
5
10
Collector Current IC (mA)
50 70
3
2SC2570A
OUTPUT AND INPUT
CAPACITANCE vs. REVERSE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
2
7
VCE = 10 V
f = 1.0 GHZ
f = 1.0 MHZ
Noise Figure NF (dB)
1
Cib
Cob
0.5
5
4
3
2
1
0.5 1
2
5
10
20
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
0
0.5
30
1
20
Gmax
S21e 2
10
0.2
0.4 0.6 0.8 1.0
Frequency f (GHZ)
Gmax
S21e 2
10
0
2
0.1
S-PARAMETER
1.0
1.4
1.2
0.9
1.8
1.6
0.7
0.6
2.0
1.0
50
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.8
1.4
1.6
1.0
1.2
0.8
0.9
50
20
10
0.3
0.6
0.7
1.8
5.0
4.0
3.0
0.2
1.4
1.6
1.0
1.8
2.0
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.0
0.4 6
4
1.0
1.2
0.9
0.8
0.7
0.6
0.5
2.0
0.0
0.4 6
4
14
0
ER
EAC
T
 AN
 +JX CE C
Zo  OM
PO

14
0
ER
EAC
T
 AN
 +JX CE C
Zo  O M
P
O

40
−1
CE
AN
CT X 
EA −J 
 Zo

0.4
1
0.0
9
4
0.4 6
0.0
ER
−110
0.40
0.10
0.5
POS
ITIV
0.39
0.11
0.4
0.0 3
7
0.4
0.1
EN T
0.38
0.12
5
0.4 5
0.0
PON
−100
−90
0.37
0.13
WAVELENG
THS T
0
0.01
0.49
0.02 OWAR
0.48
0
D
0.49
0.01
0.03 GEN
0.48
0.02WARD LOAD
ER
0.47
0.47
A
.
S TO OF REFLECTION COEFFICIENT IN DEGRE
0.0 TOR
ES
6
0.03GTH ANGLE
0.4 4 ELEN 60
0.4 4
V
0
−1
6
0.0
0.0WA
0.4 5
15
50
0
5
−1
M
CO
−80
0.36
0.14
0.4
0.0 2
8
1.0
1.0
0.35
0.15
0
−1
2
POS
ITIV
0.5
4
0.3
6
0.1
−70
4.0
1.0
0.8
3.0
0.6
NE
GA
0.4
0
−5
2
0.3 8
0.1
2.0
0.5
0
−6
5.0
1.8
TIV
3
0.3 7
0.1
0.2
10
20
3
0.3 7
0.1
0
−6
4
0.3
6
0.1
0.2
1.6
2
0.3 8
0.1
−1
30
0.2
50
−70
0.35
0.15
−80
0.36
0.14
−100
−90
0.37
0.13
0.2
0.1
0.4
1.4
0.4
Data Sheet P10404EJ3V0DS00
0
−5
0.6
1.2
NE
GA
0.8
1.0
0.6
0.4
0.8
0.3
0.28
0.22
0.9
0.27
0.23
0.8
0.4
1.0
0.3
0.3
50
−10
0.38
0.12
0.39
0.11
0.7
S11e
0.26
0.24
0.5
20
RESISTANCE COMPONENT
R
0.2
 Zo 
0.3
0.1 1
9
0.3
0.1 1
9
−110
0.40
0.10
0
−1
2
0.4
1
0.0
9
0
−1
3
0.6
0.1
0.4
0.4
0.2
0.6
10
0
1.0
0.6
Z
0.4 1.5GH1.0
0.4
0.2 0.6 .8 S22e 0.2
0
0.25
0.25
0.1
0.8
0.8
0.24
0.26
NT
5.0
10
O NE
1.0
1.5GHZ
Z0 = 50 Ω
4.0
0.23
0.27
MP
CO
CE
AN
CT X 
EA −J 
E R  Zo

TIV
0.8
−4
0
0.4
0.0 2
8
40
3.0
0.6
0.3
0.2 0
0
−1
0.4
0.2
0.2 9
1
5
0.4 5
0.0
50
−3
0
−4
0
0.3
0.2 0
0
4
0.4 6
0.0
NT
IC = 20 mA
0.1
0.3 8
2
60
−20
0.28
0.22
WAVELENG
THS T
0
0.01
0.49
0.02 OWAR
0.48
0
D
0.49
0.01
0.03 GEN
0.48
2 ARD LOAD
0.0O
ER
0.47
EFLECTION COEFFICIENT IN DEG
T W
0.47
A
03.GTHS ANGLE OF R
0.0 TOR
REES
6
0.
N
0.4 4 ELE
0.4 4
V
0
−160
6
0.0
0.0WA
0.4 5
15
50
0
1
5
−
0.2
0.1
0.2
0.2
0.2 9
1
0.2
NE
0.1
0.3 7
3
0.22
0.28
0.27
0.23
0.2
−3
0
0.4
−10
S22e
−20
0.3
0.26
0.24
0.4
0.6
0.8
0
0.4
0.4
50
0.25
0.25
1.5GHZ
1.0
0.24
0.26
20
10
RESISTANCE COMPONENT
R
0.2
 Zo 
S11e
10
VCE = 10 V
0.1
6
0.3
4
20
0.23
0.27
1.0
0.8
0.6
20
5.0
70
1
0.2 9
0.2
30
1.0
0.22
0.28
4.0
0
12
0
13
0.15
0.35
80
40
0.8
1.5GHZ
Z0 = 50 Ω
1
0.2 9
0.2
30
3.0
0.6
7
0.0 3
0.4
0.14
0.36
90
100
110
0.13
0.37
0.12
0.38
0.11
0.39
0.10
0.40
0
0.2 0
0.3
0.4
40
0.4
0.0 3
7
4
50
9
0.0
1
0.4
8
0.0 2
0.4
9
0.1 1
0.3
NT
IC = 5 mA
0.1
0.3 8
2
60
0
0.2 0
0.3
NE
0.1
0.3 7
3
9
0.1 1
0.3
0.2
0.1
0.2
0.1
6
0.3
4
70
0.2
0
12
0
13
VCE = 10 V
0.15
0.35
80
0.3
7
0.0 3
0.4
0.14
0.36
90
100
110
0.13
0.37
0.12
0.38
0.11
0.39
0.10
0.40
0.4
9
0.0
1
0.4
0.8
S-PARAMETER
8
0.0 2
0.4
0.2
0.4 0.6 0.8 1.0
Frequency f (GHZ)
3.0
0.1
20
4.0
0
VCE = 10 V
IC = 20 mA
Insertion Power Gain S21e 2 (dB)
Maximum Available Gain Gmax. (dB)
VCE = 10 V
IC = 5 mA
50 70
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
5.0
Insertion Power Gain S21e 2 (dB)
Maximum Available Gain Gmax. (dB)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
5
10
Collector Current IC (mA)
10
20
0
50
0.3
0.2
Output Capacitance Cob (pF)
Input Capacitance Cib (pF)
6
2
2SC2570A
PACKAGE DIMENSION
TO-92 (UNIT:mm)
2.54
1.27
1
2
1. BASE
2. EMITTER
3. COLLECTOR
4.2 MAX.
1.77 MAX.
0.5
14.0 MIN.
5.5 MAX.
5.2 MAX.
3
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
Data Sheet P10404EJ3V0DS00
5
2SC2570A
[MEMO]
6
Data Sheet P10404EJ3V0DS00
2SC2570A
[MEMO]
Data Sheet P10404EJ3V0DS00
7
2SC2570A
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8