NEC 2SD2163

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
Electrode Connection
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
*
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
VCBO
VCEO
VEBO
IC(DC)
150
100
8.0
±10
V
V
V
A
Collector current (pulse)
IC(pulse)*
±20
A
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
1.0
30
A
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
hFE**
VCE(sat)**
VBE(sat)**
ton
Storage time
tstg
Fall time
tf
Conditions
MIN.
TYP.
VCB = 100 V, IE = 0
VCE = 2.0 V, IC = 10 A
IC = 10 A, IB = 25 mA
IC = 10 A, IB = 25 mA
IC = 10 A, IB1 = −IB2 = 25 mA
RL = 5.0 Ω, VCC ≅ 50 V
Refer to the test circuit.
1,000
6,000
1.1
1.8
1.0
MAX.
Unit
10
µA
30,000
1.5
2.0
V
V
µs
5.0
µs
2.0
µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
J
hFE
1,000 to 3,000
2,000 to 5,000
4,000 to 10,000
8,000 to 30,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2163
Collector Current IC (A)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
IC Derating dT (%)
Transient Thermal Resistance rth(j-c)(t) (°C/W)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
2
(with infinite heatsink)
Pulse Width PW (s)
DC Current Gain hFE
Collector Current IC (A)
Case Temperature TC (°C)
Ta = 25°C
(without heatsink)
Data Sheet D16139EJ1V0DS
Collector Current IC (A)
Collector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)
2SD2163
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D16139EJ1V0DS
3
2SD2163
• The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4