NTE3122 Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Narrow Acceptance: ∆q = ±13° Typ D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 D Visible Light Cut–Off Applications: D VCRs, Cassette Tape Recorders D Floppy Disk Drives D Optoelectronic Switches D Automatic Stroboscopes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Disspation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Lead Temperature, TL During Soldering, 1.4mm from bottom face of resin package, 5sec . . . . . . . . . . . . . . . +260°C Electrical Characteristics: Parameter Collector Current Collector Dark Current Symbol IC ICBO Test Conditions VCE = 2V, Ee = Note 1 0.1mW/cm2, VCE = 10V, Ee = 0 Collector–Emitter Saturation Voltage VCE(sat) IC = 1.5mA, Ee = Note 1 Peak Emission Wavelength λP Response Time (Rise) tr Response Time (Fall) tf 1mW/cm2, VCE = 2V, IC = 10mA, RL = 100Ω Note 1. Ee: Irradiance by CIE standard light source A (tungsten lamp). Min Typ Max Unit 1.5 – 4.0 mA – – 10–6 A – 0.7 1.0 V – 860 – nm – 80 – µs – 70 – µs .116 (2.95) .085 (2.15) .118 (3.0) .059 (1.5) .157 (4.0) .728 (18.5) .118 (3.0) 1.575 (40.0) Emitter Collector .020 (0.5) .100 (2.54)