NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV) Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . . . . 30A Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A Peak Repetitive Reverse Current, Per Diode (2µs, 1kHz), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . . . . . . +175°C Voltage Rate of Change (VR = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W Electrical Characteristics (Per Diode): (Note 1) Parameter Instantaneous Forward Voltage Instantaneous Reverse Current Symbol vF iR Test Conditions Min Typ Max Unit iF = 20A, TC = +125°C – – 0.60 V iF = 30A, TC = +125°C – – 0.72 V iF = 30A, TC = +25°C – – 0.76 V VR = 45V, TC = +125°C – – 100 mA VR = 45V, TC = +25°C – – 1 mA Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. TO3P Type Package .190 (4.82) .615 (15.62) K .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) A K A .215 (5.47) TO218 Type Package .626 (15.92) Max .166 (4.23) Dia Max K .200 (5.08) Max .050 (1.27) .147 (3.76) .815 (20.72) .490 (12.44) A1 K A2 .500 (12.7) Min .215 (5.47) .110 (2.79)