NTE NTE6236

NTE6236
Powerblock Module
Description:
The NTE6236 uses 2 high voltage power diodes in series and the semiconductors are electrically
isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This
device is intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are required.
Features:
D High Voltage
D Electrically Isolated Base Plate
D 3000VRMS Isolating Voltage
D High Surge Capability
D Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (TC = +100°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . 250A
Maximum RMS Forward Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 393A
Maximum Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse Current (TJ = +150°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.16°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . . 0.02°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
IFSM
Test Conditions
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Rating
Unit
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +150°C
°
5900
A
6180
A
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +150°C
°
7015
A
7345
A
Electrical Specifications (Cont’d):
Maximum
I2t
Parameter
Symbol
for Fusing
I2t
Test Conditions
Rating
Unit
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +150°C
°
174
kA2s
159
kA2s
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +150°C
°
246
kA2s
225
kA2s
t = 0.1 to 10ms, no voltage reapplied
2460
kA2pt
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2pt
I2pt
Threshold Voltage, Low level
VF(TO)1
TJ = +150°C, (16.7% x π x IT(AV) < I < π x IT(AV))
0.79
V
Threshold Voltage, High level
VF(TO)2
TJ = +150°C, (π x IT(AV) < I < 20 x π x IT(AV))
0.92
V
Forward Slope Resistance, Low Level
rf1
TJ = +150°C, (16.7% x π x IT(AV) < I < π x IT(AV))
0.63
mΩ
Forward Slope Resistance, High Level
rf2
TJ = +150°C, (π x IT(AV) < I < 20 x π x IT(AV))
0.49
mΩ
VFM
TJ = +25°C, IFM = π x IF(AV),
Av. Power = VF(TO) x IT(AV) + rf x (IF(RMS))2
1.29
V
Maximum Forward Voltage Drop
Circuit Diagram
+
AC
AC
M8 x 1.25 Screw
(3 Places)
+
–
–
1.380
(35.0)
K2
G2
G1
K1
1.120 (28.0)
.240 (6.0)
1.500
(38.0)
.790
(20.0)
1.970
(50.0)
3.150 (80.0)
.350 (9.0)
.240 (6.0)
4.530 (115.0)
2.010
(51.0)
1.260
(32.0)
.390
(10.0)
3.620 (92.0)