NTE784 Integrated Circuit Wide–Band Power Amplifier Description: The NTE784 is a multistage, multipurpose, wide–band power amplifier on a single monolithic silicon chip. This device employs a highly versitile and stable direct–coupled circuit configuration featuring wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety of applications in military, industrial, and commercial equipment. The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum power output of 1W from a 12V DC supply with a typical power gain of 75dB. Features: D High Power Output D Wide Frequency Range D High Power Gain D Single Power Supply for Class B Operation with Transformer D Built–In Temperature Tracking Voltage Regulator Provides Stable Operation Applications: D AF Power Amplifiers for Portable and Fixed Sound and Communications Systems D Servo–Control Amplifier D Wide–Band Linear Mixers D Video Power Amplifiers D Transmission–Line Driver Amplifier (Balanced and Unbalanced) D Fan–In and Fan–Out Amplifiers for Computer Logic Circuits D Lamp–Control Amplifiers D Motor–Control Amplifiers D Power Multivibrators D Power Switches Absolute Maximum Ratings: Power Dissipation (Without Heatsink, TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/°C Power Dissipation (With Heatsink, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Breakdown Voltage V(BR)CER V(BR)CEO Test Conditions Min Typ Max Unit (Q6 & Q7) IC = 10mA 25 – – V (Q1) IC = 0.1mA 10 – – V Idle Currents I4, I7 (Q6 & Q7) VCC1 =9V, VCC2 = 2V – 5.5 – mA Peak Output Currents I4, I7 (Q6 & Q7) VCC1 =9V, VCC2 = 2V 180 – – mA Cutoff Currents I4, I7 (Q6 & Q7) VCC1 =9V, VCC2 = 2V – – 1.0 mA Differential Amplifier Current Drain ICC1 VCC1 = 9V, VCC2 = 9V 6.3 9.4 12.5 mA Total Current Drain ICC1 + ICC2 VCC1 = 9V, VCC2 = 9V 14.5 21.5 30.0 mA Differential Amplifier Input Pin Voltages V2, V3 VCC1 = 9V, VCC2 = 2V – 11.1 – V Regulator Pin Voltage V11 VCC1 = 9V, VCC2 = 2V – 2.35 – V Collector–Emitter Cutoff Current ICEO (Q) VCC1 = 10V – – 100 µA Emitter–Base Cutoff Current IEBO (Q) VCC1 = 3V – – 0.1 µA Collector–Base Cutoff Current ICBO (Q) VCC1 = 3V – – 0.1 µA Forward Current Transfer Ratio hFE1 (Q1) IC = 3mA, VCC1 = 6V 30 75 – Bandwidth BW VCC1 = 6V, VCC2 = 6V, –3dB – 8 – MHz VCC1 = 6V, VCC2 = 6V, RCC = 130Ω 200 300 – mW VCC1 = 9V, VCC2 = 9V, RCC = 130Ω 400 550 – mW VCC1 = 9V, VCC2 = 12V, RCC = 200Ω 800 1000 – mW Maximum Power Output PO(max) Sensitivity eIN VCC1 = 9V, VCC2 = 12V, POUT = 800mW, RCC = 200Ω – 50 100 mV Input Resistance RIN3 VCC1 = 6V, VCC2 = 6V, Pin3 to GND – 1000 – Ω Pin Connection Diagram (Top View) Optional Bias Short to VCC 8 VCC 9 6 Emitter Output Q2 Buffer Amp Input 10 2.1V Bias Point 11 GND 5 Emitter Output Q1 4 Collector Output Q 1 12 Buffer Amp Output 67 Collector Output Q2 1 3 Differential Amp Input “A” 12 Differential Amp Input “B” .370 (9.4) Dia Max .335 (8.5) Dia Max .180 (4.57) Max .500 (12.7) Min .018 (0.48) Dia Typ .245 (6.23) Dia 4 3 5 2 6 7 1 8 12 11 10 9