Product Bulletin OPB816 November 2000 Slotted Optical Switch Type OPB816 [30.73] 1.21 [1.02] 4X R .125 [24.38] .96 WIRE COLOR 2X [3.18] 2X R .125 [3.18] .125 [2.54] .10 NOTE 6 IDENTITY COLLECTOR WHITE GREEN EMITTER RED ANODE BLACK CATHODE [12.19] .48 [14.99 ± 0.38] .590 ± .015 [4.95] .195 [6.48] .255 [3.18] .125 [5.08] .20 OPTICAL CL [3.81] .15 Features [19.30] .760 [16.51] .650 REF • .20”(5.08 mm) wide gap • 24”minimum, 26 AWG wire leads .86” [609.6] 24.0 MIN (21.8 mm) deep slot • Dust protection WIRE: 26 AWG, 7 STRAND PVC INSUL., UL RATED [1.4 ± 0.51] .055 ± .02 [ 8.89 ± 0.51] .35 ± .02 Description The OPB816 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The deep slot allows for a longer reach of the optical center line from the mounting plane, .650” (16.51 mm). Internal apertures are .010” x 0.06”for the phototransistor “S side” and .050”x .06” for the LED “E side”. Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information. [ 7.62 ] .30 REF [ 8.13 ± 0.51] .32 ± .02 TOLERANCE ± .010 [0.25] DIMENSIONS ARE IN INCHES [MILLIMETERS] Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40°C to +80°C Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse DC Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Phototransistor Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) NOTES: (1) Derate lin early 1.67 mW/°C above 25°C. (2) All parameters tested using pulse technique. (3) Clear dust protection. Visit our website at www.optekinc.com or email us at [email protected] Optek Technology, Inc. PRECAUTIONS: Exposure of the plastic body to chlorinated hy drocarbons and ketones such as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents methanol and isopropanol are recommended. Spray or wipe do not submerge. 1215 W. Crosby Road Carrollton, Texas 75006 27 (972) 323-2200 Fax (972) 323-2396 Type OPB816 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage 1.8 V IF = 20 mA IR Reverse Current 100 µA VR = 2 V Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 1 mA, I F = 0, E e = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V IE = 100 µA, I F = 0, Ee = 0 100 nA VCE = 10 V, IF = 0, Ee = 0 10 mA VCE = 5.0, IF = 20 mA 0.40 V I CEO Collector-Emitter Leakage Current Coupled IC(ON) VCE(SAT) On-State Collector Current 1.0 Collector-Emitter Saturation Voltage IC = 100 µA, I F = 20 mA Optek re serves the right to make changes at any time in order to improve design and to supply the best product possi ble. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 28