RL1N1000F RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RL1N1800F PHOTOFLASH RECTIFIER VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere FEATURES * * * * High reliability Low leakage Low forward voltage drop High current capability A-405 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.20 gram 1.0 (25.4) MIN. .205 (5.2) .166 (4.2) .025 (0.6) DIA. .021 (0.5) .107 (2.7) .080 (2.0) DIA. 1.0 (25.4) MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL RL1N1000F RL1N1200F RL1N1400F RL1N1600F RL1N1800F UNITS Maximum Recurrent Peak Reverse Voltage VRRM 1000 1200 1400 1600 1800 Volts Maximum RMS Voltage VRMS 700 840 980 1120 1260 Volts VDC 1000 1200 1400 1600 1800 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range IO 500 Amps I FSM 25 Amps CJ 10 T J , T STG -65 to + 175 SYMBOL VF RL1N1000F RL1N1200F RL1N1400F RL1N1600F RL1N1800F 1.8 UNITS Volts 5.0 uAmps 100 uAmps 300 nSec pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 0.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 oC Maximum Full Load Reverse Current Average, Full Cycle .375” (9.5mm) lead length at T L = 55 oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, I RR = -0.25A 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts IR trr 2001-6 RATING AND CHARACTERISTIC CURVES ( RL1N1000F THRU RL1N1800F ) FIG. 2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) CURRENT, (mA) AVERAGE FORWARD RECTIFIED FIG. 1 - FORWARD CURRENT DERATING CURVE 600 500 400 Single Phase Half Wave 60Hz Resistive or Inductive Load 300 200 1.0 .8 .6 .4 .2 .1 .06 .04 .01 100 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( ) .8 .9 1.0 1.1 1.2 1.3 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 4 - TYPICAL JUNCTION CAPACITANCE FIG. 3 - MAXIMUM NON-REPETITIVE SURGE CURRENT 40 200 JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A) TJ=25 Pulse Width = 300uS 1% Duty Cycle .02 30 8.3ms Single Half Sine-Wave (JEDEC Method) 20 10 0 100 60 40 20 10 6 TJ = 25 4 2 1 1 .1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (+) 25 Vdc (approx) (-) (-) D.U.T PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) 0 -0.25A (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. 1cm SET TIME BASE FOR 50/100 ns/cm RECTRON