MOS FET FKV460 (under development) 72 Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V min max 40 External Dimensions FM20 (full-mold) Unit 3.3±0.2 V +10 –5 100 2.3 1.3 20.0 6 2000 1200 200 ID = 25A VDD 12V RL = 0.48Ω VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 8 1.5 µA µA V S mΩ pF pF pF ns ns ns ns V 4.2±0.2 10.0±0.2 2.8 16.9±0.3 8.4±0.2 0.8 4.0±0.2 Symbol (Ta=25ºC) Ratings typ ±0.2 40 (Tc=25ºC) 150 –55 to +150 100µs, duty 1% Unit V V A A W ºC ºC C 0.5 a b 1.35±0.15 1.35±0.15 3.9 * PW Ratings 40 +20, –10 ±60 ±180 ±0.2 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 13.0 min Absolute Maximum Ratings (Ta=25ºC) +0.2 0.85 –0.1 2.54 2.54 +0.2 0.45 –0.1 2.4±0.2 ±0.2 2.2 G D S a) Type No. b) Lot No. (Unit: mm)