SANREX DD100HB120

DIODE MODULE
DD(KD)100HB120/160
UL;E76102 M
Power Diode Module DD100HB series are designed for various rectifier circuits.
DD100HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
Unit a
Maximum Ratings
Symbol
Tj 25
Ratings
Item
DF100HB120
DD100HB160
Unit
VRRM
Repetitive Peak Reverse Voltage
1200
1600
V
VRSM
Non-Repetitive Peak Reverse Voltage
1350
1700
V
Symbol
Item
IF
AV
IF (RMS)
IFSM
Conditions
Ratings
Unit
Average Forward Current
Single phase, half wave, 180 conduction, Tc 111
100
A
R.M.S. Forward Current
Single phase, half wave, 180 conduction, Tc 111
155
A
Surge Forward Current
1
I2t
I2t
Tj
Junction Temperature
Tstg
Storage Temperature
VISO
Isolation Voltage
Mounting
Torque
2 cycle, 50/60HZ, peak value, non-repetitive
Value for one cycle of surge current
1800/2000
16500
40
150
A.C.1minute
40
125
2500
Mounting M6
Recommended Value 2.5 3.9 25 40
4.7 48)
Terminal M5
Recommended Value 1.5 2.5 15 25
2.7 28)
170
Mass
A
A2S
V
N m
f B
g
Electrical Characteristics
Symbol
Item
IRRM
Repetitive Peak Reverse Current, max.
at
VFM
Forward Voltage Drop, max.
Foward current 320A Tj 25
Junction to case
Rth j-c
77
Thermal Impedance, max.
VDRM,
Conditions
Ratings
Unit
single phase, half wave. Tj 150
30
mA
1.35
V
0.30
/W
Inst. measurement
DD(KD)100HB120/160
78