SHARP PT4120

PT4120
PT4120
Side View and Thin Flat Type
2-Phase Output Phototransistor
■ Features
■ Outline Dimensions
Gate burr
2-C0.5
0.7
4˚
3-0.45 +- 0.3
0.1
3. Encoders
1
1.0
4˚
4˚
0.15
2.0
(1.7)
Rugged resin 0.2 MAX.
1. Mouses
2. Track balls
4˚
MAX.0.1
4.0
1.4
3.9
0.8
2
16.5±1.0
18.0 +- 1.5
1.0
Rugged resin
0.8 MAX.
■ Applications
Transparent
epoxy resin
0.7
PT B
PT A
3.0
1.5
(Read pitch : 0.94 mm)
2. Compact, thin and flat package
(Unit : mm)
1.8
0.3 MAX.
1. 2-phase PT output type
56˚ ± 5.0
3-0.4 +- 0.3
0.1
3
(1.5)
(2.54)
Shape of detector portion
0.94
6˚
2.8
0.81
0.47
6˚
0.47
6˚
0.17
6˚
* Tolerance : ± 0.2 mm
1
3
1 Emitter (PT A)
2 Collector (common)
3 Emitter (PT B)
2
■ Absolute Maximum Ratings
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Tsol
Rating
35
6
20
75
- 25 to +85
- 40 to +85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
1.4mm
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
(Ta = 25˚C)
Soldering area
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT4120
■ Electro-optical Characteristics
Parameter
(Ta = 25˚C)
Symbol
*2
Collector current
IC
Dark current
ICEO
*2
*2
Collector-emitter saturation voltage
VCE(sat)
Collector-emitter breakdown voltage
BVCEO
*2
Emitter-collector breakdown voltage
BVECO
*2
λp
Peak sensitivity wavelength
Rise Time
Fall Time
Response time
Conditions
EV = 1 000 lx
VCE = 5V
Ee = 0,VCE= 20V
EV = 1 000 lx
IC = 0.1mA
IC = 0.1mA
Ee = 0
IE = 0.01mA
Ee = 0
2-element I C variation
tr
tf
VCE = 2V,IC = 2mA
RL = 100Ω
R
IC(a)/IC(b)
MIN.
TYP.
MAX.
Unit
0.45
-
1.8
mA
-
-
0.1
µA
-
0.1
0.4
V
35
-
-
V
6
-
-
V
-
800
-
nm
-
3.0
3.5
-
µs
µs
0.7
-
1.3
-
*2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
*3 Terminals other than test terminal shall be released.
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2 Dark Current vs. Ambient Temperature
10 -6
80
2
10 -7
60
Dark current I CEO (A)
Collector power dissipation P C (mW)
5 VCE = 20V
70
50
40
30
20
5
2
10 -8
5
2
10 -9
5
10
2
0
- 25
0
25
50
75 85
Ambient temperature Ta ( ˚C)
100
10 -10
0
25
50
75
Ambient temperature Ta ( ˚C)
100
PT4120
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Fig. 4 Collector Current vs. Illuminance
20.0
160
VCE = 5V
EV = 1 000 lx
10.0
Collector current Ic (mA)
Relative collector current (%)
140
120
100
80
60
40
VCE = 5V
Ta = 25˚C
5.0
2.0
1.0
0.5
0.0
20
0
0
10
20
30
40
50
60
0.1
10
70
20
50
Ambient temperature Ta (˚C)
100
200
500
1000 2000
Illuminance EV (lx)
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Fig. 6 Spectral Sensitivity
100
1.6
Ta = 25˚C
Ev = 1 000 lx
80
1.2
Relative sensitivity (%)
Collector current Ic (mA)
1.4
750 lx
1
0.8
500 lx
0.6
0.4
250 lx
0.2
100 lx
60
40
20
0
0
5
10
15
20
25
30
0
400
35
500
600
700
800
900
1000
Wavelength λ (nm)
Collector-emitter voltage V CE (V)
Fig. 7 Response Time vs. Load Resistance
Test Circuit for Response Time
100
Response time t r,tf (µ s)
50
VCE = 2V
Ic = 2mA
Ta = 25˚C
Output Input
20
tr
tf
10
Vcc
90%
RL
Output
10%
5 t
f
tr
tr
2
1
0.1
0.2
0.5
1
2
Load resistance RL (k Ω)
5
10
tf
1100
PT4120
Fig. 10 Relative Output vs. Distance
(Detector : GL4100)
100
2
Ta =25˚C
1.8
1.6
10
Relative output (%)
IC=0.4mA
IC=0.6mA
1.0
0.8
IC =0.2mA
1.2
IC =0.1mA
1.4
IC =0.05mA
Collector-emitter saturation voltage VCE(sat)(V)
Fig. 9 Collector-emitter Saturation Voltage
vs. Irradiance
0.6
1
0.1
0.4
0.2
0
10
100
1000
Irradiance E e (mW/cm2)
● Please refer to the chapter "Precautions for Use". (Page 78 to 93)
0.01
0.1
1
10
100
Distance between emitter and detector d (mm)