SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4230 Case : TO-220 (T2V80HFX) Unit : mm 2A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO V CEO V EBO IC I CP IB IBP PT TOR ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current I CBO I CEO Emitter Cutoff Current IEBO DC Current Gain h FE h FEL Collector to Emitter Saturation Voltage V CE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Tc = 25℃ (Recommended torque : 0.3N･m) Conditions IC = 0.1A At rated Voltage At rated Voltage VCE = 5V, IC = 1A VCE = 5V, IC = 1mA IC = 1A IB = 0.2A Junction to case VCE = 10V, IC = 0.2A IC = 1A IB1 = 0.2A, IB2 = 0.4A RL = 250Ω, VBB2 = 4V Ratings -55∼150 150 1200 800 7 2 4 1 2 50 0.5 Unit ℃ ℃ V V V A Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 2.5 TYP 8 Max 0.5 Max 3.5 Max 0.3 Unit V mA A W N･m mA V V ℃/W MHz μs DC Current Gain hFE −55°C −25°C 0°C 50°C 25°C 100°C Tc = 150°C 1 0.001 10 100 0.01 0.1 hFE - I C Collector Current IC [A] 2SC4230 1 VCE = 5V 4 Collector-Emitter Voltage VCE [V] 2A 2A 1 4A 4A 2 2.5 Tc = 25°C 0 0.01 0.5 1 Base Current IB [A] 0.1 0 0.5 1 1.5 1A 1A 1.5 0.5A 0.5A 3 2 IC = 0.25A IC = 0.25A Saturation Voltage 2 2.5 3 2SC4230 Base-Emitter Voltage VBE [V] 2SC4230 Switching Time - IC 10 ts Switching Time tSW [µs] 1 ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25°C 0.01 0 0.5 1 Collector Current IC [A] 1.5 2 2SC4230 Switching Time - VCC 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V Tc = 25°C 0.01 0 50 100 150 200 Collector Voltage VCC [V] 250 300 2SC4230 Switching Time - Tc 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V R L = 250Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 2SC4230 L-Load Switching Time - IC 10 ts Switching Time tSW [µs] 1 tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25°C 0.01 0 0.5 1 Collector Current IC [A] 1.5 2 2SC4230 L-Load Switching Time - IC (At High Temperature) 10 ts Switching Time tSW [µs] 1 tf + tvs tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100°C 0.01 0 0.5 1 Collector Current IC [A] 1.5 2 0.01 0.1 1 10 0.001 Transient Thermal Impedance θjc(t) [°C/W] 10-4 10-3 10-2 2SC4230 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SC4230 4 Forward Bias SOA 10ms 1ms 150µs 50µs DC PT limit Collector Current IC [A] 1 IS/B limit 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 800 2SC4230 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC4230 Reverse Bias SOA 4 3.5 Collector Current IC [A] 3 2.5 2 1.5 1 IB1 = 0.25IC IB2 = 0.3A VBB2 = 5V Tc < 150°C 0.5 0 0 200 400 600 800 1000 Collector-Emitter Voltage VCE [V] 1200