SHINDENGEN Switching Power Transistor OUTLINE DIMENSIONS 2SC4941 Case : ITO-3P Unit : mm 6A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT Vdis TOR ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector to Base Voltage VCBO Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Terminals to case, AC 1 minute (Recommended torque) Conditions IC = 0.2A ICB = 1mA VCB = 1200V rated VCEO rated VEBO VCE = 5V, IC = 1A VCE = 5V, IC = 1mA IC = 3A IB = 0.6A Junction to case VCE = 10V, IC = 0.6A IC = 3A IB1 = 0.6A, IB2 = 1.2A RL = 85Ω, VBB2 = 4V Ratings -55～150 150 1500 800 7 6 12 3 6 65 2 0.8(0.5) Unit ℃ ℃ V V V A Ratings Min 800 Min 1500 Max 0.1 Max 0.1 Max 0.1 Min 15 Min 7 Max 0.5 Max 1.5 Max 1.92 TYP 8 Max 0.5 Max 3.5 Max 0.3 Unit V A W kV N･m mA mA V V ℃/W MHz μs DC Current Gain hFE −55°C 0°C −25°C 50°C 25°C 100°C Tc = 150°C 1 0.001 10 100 0.01 0.1 hFE - I C Collector Current IC [A] 2SC4941 1 10 12 VCE = 5V Collector-Emitter Voltage VCE [V] 3.0A 3.0A 6.0A 6.0A 9.0A 9.0A 12A 6 2.5 0 0.01 0.5 1 Tc = 25°C 0.1 Base Current IB [A] 1 0 0.5 1 1.5 1.5A 1.5A 1.5 1A 3 2 IC = 0.75A IC = 0.75A Saturation Voltage 2 2.5 3 2SC4941 Base-Emitter Voltage VBE [V] 2SC4941 Switching Time - IC 10 ts Switching Time tSW [µs] 1 ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25°C 0.01 0 1 2 3 4 Collector Current IC [A] 5 6 2SC4941 Switching Time - Tc 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V R L = 85Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 2SC4941 Forward Bias SOA 12 10ms 10 1ms 150µs 50µs DC Collector Current IC [A] PT limit 1 IS/B limit 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 800 2SC4941 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC4941 Reverse Bias SOA 12 IB1 = 0.25IC IB2 = 0.9A VBB2 = 5V Tc < 150°C 10 Collector Current IC [A] 8 6 4 2 0 0 200 400 600 800 1000 Collector-Emitter Voltage VCE [V] 1200 0.01 0.1 1 10 0.001 Transient Thermal Impedance θjc(t) [°C/W] 10-4 10-3 10-2 2SC4941 Time t [s] 10-1 100 Transient Thermal Impedance 101 102