CXA2598M PDIC for CD-R/RW Description The CXA2598M is a PDIC (photodetector IC) developed as a photodetector for the optical pickup of CD-R/RW. The photodiode and I-V amplifier operate at high speed (100MHz). When the strong light is emitted during write, the delay or ringing is not occurred because the limiter circuit is included in the I-V amplifier. • Focus servo: astigmatic method • Tracking servo: differential push-pull method PD-S-12 (Plastic) Features • I-V amplifier (current-voltage conversion circuit) • RF output of addition of A to D signals • Wide band (100MHz typ.) • Output limiter circuit • Small transparent molded package (SOP) Applications Optical pickup for CD-R/RW Structure Bipolar silicon monolithic IC Absolute Maximum Ratings (Ta = 25°C) • Supply voltage VCC 5.5 • Operating temperature Topr –10 to +70 • Storage temperature Tstg –40 to +85 • Allowable power dissipation PD 300 Operating Condition Supply voltage VCC V °C °C mW 4.5 to 5.5 V Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E00342-PS CXA2598M Electrical and Optical Characteristics Item Symbol (VCC = 5.0V, VC = 2.5V, Ta = 25°C) Conditions Min. Typ. Max. Unit — 16 25 mA Current consumption ICC In the dark Output offset voltage (A to D) Voff In the dark, Vc reference –30 0 30 mV Output offset voltage (E to H) Voff In the dark, Vc reference –25 0 25 mV Output offset voltage (RF) Voff In the dark, Vc reference –100 0 100 mV (A + B) – (C + D), in the dark –20 0 20 mV (A + D) – (B + C), in the dark –20 0 20 mV (A + C) – (B + D), in the dark –20 0 20 mV (E + G) – (F + H), in the dark –20 0 20 mV Output offset voltage difference ∆Voff Offset temperature drift (A to H) ∆Voff/T In the dark –100 — 100 µV/°C Offset temperature drift (RF) ∆Voff/T In the dark –1.0 — 1.0 mV/°C Output voltage (A to D) VO λ = 780nm, Po = 10µW 82 110 138 mV Output voltage (E to H) VO λ = 780nm, Po = 10µW 338 450 563 mV Output voltage (RF) Vo λ = 780nm, Po = 10µW 165 220 275 mV Maximum output voltage (A to H, RF) VO λ = 780nm, Po = 500µW 3.9 4.0 — V Frequency response 1 (A to D) fc λ = 780nm Po = 10µWDC, 4µWp-p 100kHz reference, –3dB 60 100 — MHz Frequency response 1 (E to H) fc λ = 780nm Po = 10µWDC, 4µWp-p 100kHz reference, –3dB 12 20 — MHz Frequency response 1 (RF) fc λ = 780nm Po = 10µWDC, 4µWp-p 100kHz reference, –3dB 60 100 — MHz Frequency response 2 (A to D) ∆G λ = 780nm Po = 10µWDC, 4µWp-p 35MHz/100kHz –0.5 0 0.5 dB Frequency response 2 (RF) ∆G λ = 780nm Po = 10µWDC, 4µWp-p 35MHz/100kHz –1.0 0.5 1.0 dB Group delay difference (A to D) ∆Gd 100kHz to 35MHz — 0.5 2 ns Group delay difference (RF) ∆Gd 100kHz to 35MHz — 0.5 2 ns Settling time 1 (A to D) Tset1 Output 500mV → 5mV — — 40 ns Settling time 1 (E to H) Tset1 Output 500mV → 5mV — — 70 ns Settling time 2 (A to D) Tset2 Output 500mV → 0.5mV — — 70 ns Slew rate (A to D) SR — 200 — — V/µs Slew rate (E to H) SR — 40 — — V/µs Note 1) Output offset voltage: Vc is the reference. Note 2) Output voltage: Vc is the reference. However, the offset voltage is excluded. Note 3) Output voltage, offset temperature drift, frequency response, group delay difference, settling time, slew rate: Confirmation of design. Note 4) Measurement by the optical input: Measurement is made by emitting the light to the center of each –2– photodiode. CXA2598M Measurement Circuit Vcc GND 12 1 Vcc 2 Ho Go 11 3 Ao Do 10 4 Bo Co 9 5 Fo Eo 8 6 Vc RF 7 Vc ∗ All loads are 2.5kΩ//20pF. Photodetector Position Top view 12 7 A H G D B C F E 45 deg. Center of package 1 6 0.52 Deviation from the center of photodetector X, Y : ±0.2 Z : ±0.2 θ : ±2° Reference surface Surface that senses the indident light (Unit : mm) –3– CXA2598M H G 5 A 16 0 D B 5 40 5 C 16 0 F E 40 16 0 Photodetector Pattern Dimensions (Unit: µm) 16 0 5 45 deg. Circuit Block Diagram GND Go Do Co Eo RF 12 11 10 9 8 7 R2 R1 R1 R2 G D C E H A B F Ao Bo Co Do R2 R1 R1 R2 1 2 3 4 5 6 VCC Ho Ao Bo Fo Vc R1 = 29kΩ, R2 = 118kΩ A, B, C, D, E, F, G and H are the photodiodes. (Optical sensitivity: Approximately 0.40A/W) –4– CXA2598M Pin Description Pin No. 3 4 9 10 Symbol Ao Bo Co Do I/O Equivalent circuit 3 O Description Output of voltage signals converted from optical signals 4 9 10 2 5 8 11 Ho Fo Eo Go O 7 RF O 2 5 118k 8 Output of voltage signals converted from optical signals 11 Output of addition of Ao to Do signals 7 GND For dual power supply : negative power supply For a single power supply : GND 6 VC I For dual power supply : GND For a single power supply : center voltage input 1 VCC I 12 6 Positive power supply –5– CXA2598M Example of Representative Characteristics A to D I-V output frequency response 2 Gain [dB] 0 –2 –4 –6 –8 1 3 5 7 10 30 50 70 100 300 Frequency [MHz] RF output frequency response 2 Gain [dB] 0 –2 –4 –6 –8 1 3 5 7 10 30 50 70 100 300 Frequency [MHz] E to H I-V output frequency response 2 Gain [dB] 0 –2 –4 –6 –8 1 3 5 7 10 30 Frequency [MHz] –6– 50 70 100 300 CXA2598M Notes on Operation 1. Connection to RF amplifier The voltage input-type RF amplifier should be used because the CXA2598M is the voltage output type. The noise allowance is dramatically increased compared to the case where the conventional photodiode and the current input-type RF amplifier are used. 2. Power supply The CXA2598M can be used with a single power supply or dual power supply. However, this IC is not provided with a center voltage generating circuit, and so when used with a single power supply the center voltage must be supplied from the RF amplifier or some other device. (Pin 1) VCC (Pin 12) GND (Pin 6) VC Dual power supply Positive power supply Negative power supply GND Single power supply Positive power supply GND Center voltage The potential difference between the Vcc pin and the GND pin should be in the range of 4.5 to 5.5V in both of a single power supply and dual power supply. 3. Soldering The reflow soldering is not guaranteed for the CXA2598M. 4. Mechanical strength for package The mechanical strength for the package is not guaranteed for the CXA2598M. Do not employ the mounting method which gives much weight to the package. 5. Visual inspection standard Another specifications and limit samples must be exchanged regarding visual inspection standards for the photodetector. –7– CXA2598M Package Outline Unit: mm PD-S-12 + 0.4 5.0 – 0.1 1.5 ± 0.1 φ2.5 Mirror Surface + 0.1 0.15 – 0.05 0.9 ± 0.1 12 8.0 ± 0.4 + 0.3 4.0 – 0.1 10˚ 15˚ 7 Datum Plane 1 6 0.3 MIN 0.3 ± 0.1 0.8 0.16 M 10˚ 5˚ SONY CODE PD-S-12 PACKAGE MASS 0.05g EIAJ CODE JEDEC CODE –8– Sony Corporation