SSE RC10S04

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC10S01 THRU RC10S10
SILICON SILASTIC
CELL RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
• Low cost
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice in
package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(Ta=55oC)
(Note 2)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
Ta=25oC
(at rated DC blocking voltage)
Ta=150oC
VRRM
VRMS
VDC
RC10S RC10S RC10S RC10S RC10S RC10S
UNITS
01
02
04
06
08
10
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
IF(AV)
10
A
IFSM
400
A
VF
1.0
V
10
µA
500
µA
IR
CJ
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 3) Rθ(ja)
Storage and Operation Junction Temperature TSTG,TJ
Note:
1. Measured at 1 MHz and applied voltage of 4.0Vdc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
300
1
-50 to +150
pF
o
C/W
o
C
http://www.sse-diode.com