GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description MIE-114G1 Package Dimensions Unit: mm ( inches ) The MIE-114G1 is a GaAs infrared emitting diode 4.45±0.20 (.175±.008) molded in clear , lensed side looking package . 2.22 (.087) (.087) 0.76±0.10 (.030±.008) The MIE-114G1 provides a broad range of intensity selection . 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) CATHODE 5.72±0.20 (.225±.008) 12.70 MIN. (.500) Features l 0.50 TYP. (.020) Selected to specific on-line intensity and 1.00 MIN. (.040) 2.54 NOM. (.100) radiant intensity ranges l Low cost, plastic side looking package l Mechanically and spectrally matched to SEE NOTE 3 C The MID-11422 Phototransistor . A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Power Dissipation 75 mW Peak Forward Current 1 A Continuos Forward Current 50 mA Reverse Voltage 5 V o o Operating Temperature Range -55 C to + 100 C Storage Temperature Range -55oC to + 100oC Lead Soldering Temperature 260 C for 5 seconds o Unity Opto Technology Co., Ltd. 02/04/2002 MIE-114G1 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. Typ . Max. Unit Radiant Incidance IF=20mA Ee - 0.6 - mW/cm2 Forward Voltage IF=20mA VF - 1.25 1.40 V Reverse Current VR=5V IR - - 100 µA Peak Wavelength IF=20mA λ - 940 - nm Spectral Bandwidth IF=20mA ∆λ - 50 - nm View Angle IF=20mA 2θ1/2 - 80 - deg . Relative Radiant Intensity Typical Optical-Electrical Characteristic Curves 1 0.5 0 840 880 920 960 1000 Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Relative Radiant Intensity Forward Current (mA) 100 80 60 40 20 0 0 1.2 1.6 2.0 2.4 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.8 -40 -20 0 20 0° 10° Relative Radiant Intensity 5 4 3 2 1 0 0 20 40 60 80 100 Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT 40 60 Ambient Temperature TA(℃) FIG.3 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE Forward Voltage (V) FIG.2 FORWARD CURRENT VS. FORWARD VOLTAGE Relative Radiant Intensity 1040 20° 30° 40° 1.0 0.9 50° 60° 70° 80° 90° 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 RADIATION DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002