UOT MIE

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
MIE-534A4
Package Dimensions
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Unit: mm ( inches )
φ 5.05
(.199)
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
1.00
(.039)
SEE NOTE 2
l
High radiant power and high radiant intensity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30°
l
Peak wavelength λp = 940 nm
l
Good spectral matching to si-photodetector
FLAT DENOTES CATHODE
23.40 MIN.
(.921)
0.50 TYP.
(.020)
1.00MIN.
(.039)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
oo
@@TAT=25
A=25 C
Parameter
Maximum Rating
Unit
120
mW
1
A
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55oC to +100oC
Storage Temperature Range
-55oC to +100oC
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/20/2000
MIE-534A4
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
Typ .
2.0
3.5
Max.
Unit
Radiant Intensity
IF=20mA
Ie
mW/sr
Forward Voltage
IF=50mA
VF
Reverse Current
VR=5V
IR
Peak Wavelength
IF=20mA
λ
940
nm
Spectral Bandwidth
IF=20mA
∆λ
50
nm
View Angle
IF=20mA
2θ1/2
30
deg .
1.30
1.5
V
100
µA
1
0.5
0
840
940
1040
Forward Current IF (mA)
Relative Radiant Intensity
Typical Optical-Electrical Characteristic Curves
100
90
80
70
60
50
0
60
40
20
0
0.8
1.2
1.6
2.0
2.4
2.8
Output Power To Value
I =20mA
Forward Current (mA)
80
3
2
1
0
0
20
40
60
80
100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
50
75 100 125
3
2
1.5
1
0.5
0
-20
0
20
40
60
Ambient Temperature TA (oC)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Relative Radiant Intensity
Output Power Relative To
Value at IF=20mA
4
25
2.5
-40
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
0
Ambient Temperature TA(oC)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
100
-55 -25
0° 10°
20°
30°
40°
1.0
0.9
50°
60°
70°
80°
90°
0.8
0.5 0.3 0.1
0.2 0.4 0.6
FIG.6 RADIANTION DIAGRAM
Unity Opto Technology Co., Ltd.
11/20/2000