GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-544A4 Package Dimensions Unit: mm(inch) φ 5.05 (.199) The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. 5.47 (.215) It is molded in water clear plastic package. 7.62 (.300) 5.90 (.230) 1.00 (.039) SEE NOTE 2 FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity l Suitable for DC and high pulse current operation l Standard T-1 3/4 ( φ5mm) package, radiant angle : 40° 23.40 MIN. (.921) 0.50 TYP. (.020) 1.00MIN. (.039) l Peak wavelength λP =940 nm l Good spectral matching to si-photodetecto 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit 100 mW Peak Forward Current 1 A Continuous Forward Current 50 mA Reverse Voltage 5 Power Dissipation V o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544A4 Optical-Electrical Characteristics o @ TA=25 C Parameter Test Conditions Symbol Min. Typ . 1.0 2.0 Max. Unit Radiant Intensity IF=20mA Ie mW/sr Forward Voltage IF=50mA VF Reverse Current VR=5V IR Peak Wavelength IF=20mA λ 940 nm Spectral Bandwidth IF=20mA ∆λ 50 nm View Angle IF=20mA 2θ1/2 40 deg . 1.30 1.5 V 100 µA 0.5 0 840 940 1040 Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION Forward Current (mA) 100 80 60 40 20 0 0 1.2 1.6 2.0 2.4 2.8 Output Power To Value I F=20mA Relative Radiant Intensity 1 Forward Current I F (mA) Typical Optical-Electrical Characteristic Curves Forward Voltage (V) FIG.3 FORWARD CURRENT VS. FORWARD VOLTAGE 60 50 40 30 20 10 0 -55 -25 0 25 50 75 100 125 Ambient Temperature TA (oC) FIG.2 FORWARD CURRENT VS. AMBIENT TEMPERATURE 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 o Ambient Temperature TA( C) FIG.4 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 4 3 2 1 0 0 20 40 60 80 100 Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT Relative Radiant Intensity Output Power Relative To Value at I F=20mA 0° 10° 5 60 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.6 RADIATION DIAGRAM Unity Opto Technology Co., Ltd. 11/17/2000