BUT56A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C C) Characteristic Collector-Base Voltage Collector-EmitterVoltage Emitter-Base voltage Collector Current (DC) Collector Peck Current Base Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 1000 450 6 8 10 4 100 150 -65~150 V V V A A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C C) Characterristic Collector Cutoff Current (VBE=0) Emitter Cutoff Current(IC=0) Collector Emitter Saturation Voltage Base- Emitter Saturation Voltage Current Gain Bandwith Product Turn-Off Time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Symbol ICES IEBO VCE(sat) VBE(sat) fT toff Test Condition VCE= 800V , VEB= 0 VEB= 6V , IC=0 IC=5A, IB=0.5A IC=5A, IB=1.2A VCE= 10V , IC=500mA IC=4A, IB=0.4A IC=4A, IB=0.6A IC=5A, IB=1.0A Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] Min Typ Max 5 1 2.5 2.5 10 0.75 0.5 0.5 Unit mA mA V V MHZ µS µS µS