MJE13005B NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS ( TA=25 C ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 Emitter-Base Voltage Collector Current Ic Collector Power Dissipation o Ptot Tamb=25 C Tcase=25oC Junction Temperature Storage Temperature Range V V A 1.5 W 75 Tj Tstg 150 -55~+150 ELECTRICAL CHARACTERISTICS (TA=25oC ) Collector-Emitter Sustaining Voltage V(BR)CEO TEST CONDITION Ic=1m A, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IE=0 , Ic=1m A 700 - V Emitter-Base Breakdown Voltage V(BR) EBO IE=1mA, IC=0 9 - V Collector Cut off current ICBO VCB=700V, IE=0 A Collector-Emitter Cut off Current ICEO VCE=400V, IB=0 - 10 00 - 1000 Emitter-Base Cut off Voltage IEBO VEB=9V, Ic=0 - A CHARACTERISTIC SYMBOL MIN. MAX. UNIT V 400 - DC Current Gain Collector-Emitter Saturation Voltage Base-emitter Voltage Base-Emitter Saturation Voltage Fall Time hFE VCE(sat) V BE V BE (sat) Ic=2A tf Storage Time ts Freqency Characteristics fT Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com V CE=5V, Ic=1A Ic=1A, IB=0.25A I E = 1A Ic=21A, IB =0.25A Ic=2A IB1=-IB2=0.4A 10 - _ V CE=10V, I C=0.5A, f=1MHz Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 1.0 1.25 V V 1.2 V 0.9 S 4 S - IB1=- IB2=0.4A 5 - 40 _ _ A 1000 - MHz