NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS ( TA=25oC ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current Ic Collector Power Dissipation Pc V V A W (Tc=25 ) Junction Temperature Storage Temperature Range 150 Tj Tstg -55~+150 ELECTRICAL CHARACTERISTICS ( TA =25 oC ) CHARACTERISTIC Collector-Emitter Sustaining Voltage SYMBOL VCEO(sus) TEST CONDITION Ic=10m A, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IE=0 , Ic=1m A Emitter-Base Breakdown Voltage V(BR) EBO IE=1mA, IC=0 Collector Cut off current ICBO VCB=700V IE=0 Collector-Emitter Cut off Current ICEO VCE=400V IB=0 Emitter-Base Cut off Voltage IEBO DC Current Gain MIN. MAX. UNIT V 400 - V 9 - V - 10 A - 10 A VEB=7V Ic=0 - 10 A 700 hFE1 V CE =5V,Ic=2A, 8 50 - hFE2 VCE(sat1) V CE =5V,Ic=5A, Ic=2A, IB=0.4A 5 30 - 1 V VCE(sat2) Ic=5A, IB=1A - 2 V VCE(sat3) Ic=8A, IB=2A - 3 V Fall Time tf Ic=5A IB1 =-1 B2 =1A VCC=45V - 0.9 Freqency Characteristics fT V CE =10V, I C =0.5A, f=1MHz 4 - Collector-Emitter Saturation Voltage Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] S MHz