SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A MIN 1.5 MAX 70 60 10 75 1.2 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 70 60 5 10 6 75 150 150 UNIT V V v A A W MAX 1.0 2.5 UNIT mA mA v V ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 4.0A; VCE = 4V IC = 0.5A; VCE = 10V VCB = 10V Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] MIN 60 20 5 1.2 100 350 MHz pF us us us