THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL560 ADVANCE INFORMATION DS3297 - 2.1 SL560 300MHz LOW NOISE AMPLIFIER This monolithic circuit contains three very high performance transistors and associated biasing components in an eightlead TO-5 package forming a 300MHz low noise amplifier. The configuration employed permits maximum flexibility with minimum use of external components. The SL560C is a general purpose low noise, high frequency gain block. The device is also available as the SL560AC which has guaranteed operation over the fully Military Temperatures Range and is screened to MIL-STD-883 Class B. Data is available separately. INPUT 50 APPLICATIONS INPUT COMMON BASE CONFIGURATION GROUND 8 7 INPUT COMMON EMITTER CONFIGURATION 1 SL560 6 5 2 OUTPUT CURRENT SET 3 4 OUTPUT GAIN SET Vcc FEATURES ■ ■ ■ ■ ■ Bottom view Gain up to 40dB Noise Figures less than 2dB (Rs 200 ohm) Bandwidth 300MHz GROUND 1 OUTPUT CURRENT SET 2 OUTPUT 3 Vcc 4 Supply Voltage 2-15V (Depending on Configuration) SL 560 CM8 8 INPUT 50 OHMS APPLICATIONS 7 INPUT COMMON BASE 6 INPUT COMMON EMITTER 5 GAIN SET Low Power Consumption Top view APPLICATIONS ■ Radar IF Preamplifiers ■ ■ ■ ■ ■ ■ ■ ■ DP8 Fig.1 Pin connections Infra-Red Sysems Head Amplifiers Amplifiers in Noise Measurement Systems Low Power Wideband Amplifiers GAIN SET Vcc 3 OUTPUT 5 Instrumentation Preamplifiers 10k 50 ohm Line Drivers INPUT (COMMON EMITTER CONFIGURATION) Wideband Power Amplifiers INPUT (COMMON BASE CONFIGURATION) Wideband Dynamic Range IF Amplifiers TR2 TR3 7 10k INPUT (50 APPLICATIONS) 240 TR1 6 Aerial Preamplifiers 30 500 1k 200 2 OUTPUT CURRENT SET 8 2k ABSOLUTE MAXIMUM RATINGS Supply voltage Storage temperature SL560C DP SL560C CM Junction temperature SL560C DP SL560C CM Operating temperature range SL560C DP SL560C CM Thermal resistance Chip-to-ambient SL560C CM SL560C DP Chip-to-case SL560C CM SL560C DP 4 560 1 +15V -55°C to +150°C -65°C to +150°C +150°C +175°C -30°C to +85°C -55°C to +125°C 225°C/W 111°C/W 65°C/W 71°C/W Fig.2 SL560C circuit diagram ORDERING INFORMATION SL560 C CM SL560 C DP 5962-90520 (SMD) GROUND SL560 SUPPLY DECOUPLING CAPACITOR 5 +VCC 6 7 4 8 3 2 1 I/P GROUND O/P SUBVIS/BNC SOCKET LINK Fig.3 PC layout for 50Ω line driver (see Fig.6) SL560 ELECTRICAL CHARACTERISTICS These characteristics are guaranteed over the following conditions (unless otherwise stated) Frequency = 30MHz; VCC=6V; RS = RL =50Ω; TAMB=22°C ± 2°C; Test Circuit: Fig.6 Characteristic Small signal voltage gain Gain flatness Upper cut-off frequency Output swing Min. Typ. Max. Units 11 14 ±1.5 250 +7 +11 1.8 3.5 20 17 dB dB MHz dBm dBm dB dB mA +5 Noise figure (common emitter) Supply current 30 Conditions 10MHz - 220MHz VCC6V VCC = 9V RS = 200Ω RS = 50Ω CIRCUIT DESCRIPTION Three high performance transistors of identical geometry are employed. Advanced design and processing techniques enable these devices to combine a low base resistance (Rbb') of 17Ω (for low noise operation) with a small physical size giving a transition frequency, fT, in excess of 1GHz. The input transistor (TR1) is normally operating in common base, giving a well defined low input impedance. The full voltage gain is produced by this transistor and the output voltage produced at its collector buffered by the two emitter followers (TR2 and TR3). To obtain maximum bandwidth the capacitance at the collector of TR1 must be minimised. Hence, to avoid bonding pad and can capacitances, this point is not brought out of the package. The collector load resistance of TR1 is split, the tapping being accessible via pin 5. If required, an external roll-off capacitor can be fixed to this point. The large number of circuit nodes accessible from the outside of the packages affords great flexibility, enabling the operating current and circuit configuration to be optimised for any application. In particular, the input transistor (TR1) can be operated in common emitter mode by decoupling pin 7 and using 6 as the input. In this configuration, a 2dB noise figure (RS = 200Ω) can be achieved. This configuration can give a gain of 35dB with a bandwidth of 300MHz (see figs. 10 and 11). Because the transistors used in the SL560C exhibit a high value of fT, care must be taken to avoid high frequency instability. Capacitors of small physical size should be used, the leads of which must be short as possible to avoid oscillation brought about by stray inductance. The use of a ground plane is recommended. 15 12 TA = +25°C VCC = 6V POUT = (a) +5dBm (b) 0dBm (b) 5 POUT (dBm) GAIN (dB) 10 10 8 6 4 (a) 2 0 10 30 50 100 200 300 FREQUENCY (MHz) Fig.4 Frequency response, small signal gain is of a typical device (b) 0 10 TA = +25°C VCC = a) 6V (b) 9V 30 100 FREQUENCY (MHz) (a) 200 300 Fig.5. Frequency response, output capability (loci of maximum output power with frequency for 1dB gain compression (typical) SL560 TYPICAL APPLICATIONS +6V 1.8 50 OUTPUT TA = +25°C VCC = (a) 3V (b) 6V (c) 9V 10n 1.6 5 6 1 8 10n 7 10n INPUT INPUT VSWR 4 3 2 (a) 1.4 (b) 1.2 (c) Gain 14dB Bandwidth 220MHz (POUT = 1mW, 50Ω) 200MHz (POUT = 5mW, 50Ω) Input SWR 1.5:1 Fig.6 50Ω lin driver. The response of this configuration is shown in Fig.4 10 100 200 400 300 FREQUENCY (MHz) Fig.7 Input standing wave ratio plot of circuit shown in Fig.6 (typical) V CC 10n OUTPUT 3 4 5 2 10n 6 1 INPUT 40 7 8 35 30 10k 0V Voltage gain 32dB at 6V 35dB at 10V Noise figure 1.8dB (Rs = 200Ω) Supply current 6mA at 6V 12mA at 10V Bandwidth 75MHz (see Fig.9) Fig.8 Low Noise preamplifier GAIN (dB) 10n 25 20 15 10 5 0 10 20 30 50 100 200300 500 FREQUENCY (MHz) 1000 Fig.9 Frequency response of circuit shown in Fig.8 (typical) 1n 470 15 VCC 1n (b) 3 4 5 2 10n 6 1 8 7 INPUT 1n 27p 15 56p 15 GAIN (dB) OUTPUT (a) 10 TA = +25°C VCC = (a) 6V (b) 9V 5 0V Gain 13dB at Vcc = 9V -1dB at 6MHz and 300MHz Fig.10 Wide bandwidth amplifier 10 100 200 300 400 FREQUENCY (MHz) Fig.11 Frequency response of circuit shown in Fig.10 (typical) SL560 0.1 µ 0.1µ 1n 47µ OUTPUT 3 4 5 2 3 6 1 8 4 5 2 7 3 6 1 1n 8 4 5 2 7 6 1 8 INPUT 7 1n 1n Fig.12 Three-stage directly-coupled high gain low noise amplifier +2V 10n OUTPUT 60 GAIN (dB) (b) 3 (c) TA = +25°C VCC = (a) 4V (b) 6V (c) 9V 20 10n 8 INPUT 7 (a) 10n 0V 20 0 5 6 1 40 4 2 50 70 100 FREQUENCY (MHz) Gain 13dB Power supply current 3mA Bandwidth 125MHz Noise figure 2.5dB (Rs = 200Ω) 200 300 Fig.13 Frequency response of circuit shown in Fig.12 (typical) Fig.14 Low power consumption amplifier DISSIPATION (mW) 700 600 500 400 300 TO5 200 100 DIP 40 50 60 70 80 90 100 110 120 130 140 150 TEMPERATURE (°C) Fig.15 Ambient operating temperature V. degrees centigrade (typical) SL560 HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: (0793) 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017, United States of America. Tel: (408) 438 2900 Fax: (408) 438 5576 CUSTOMER SERVICE CENTRES • FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax : (1) 64 46 06 07 • GERMANY Munich Tel: (089) 3609 06-0 Fax : (089) 3609 06-55 • ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993 • JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510 • NORTH AMERICA Scotts Valley, USA Tel (408) 438 2900 Fax: (408) 438 7023. • SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872 • SWEDEN Stockholm, Tel: 46 8 702 97 70 Fax: 46 8 640 47 36 • UK, EIRE, DENMARK, FINLAND & NORWAY Swindon Tel: (0793) 518510 Fax : (0793) 518582 These are supported by Agents and Distributors in major countries world-wide. 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