ZARLINK SL560

THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
SL560
ADVANCE INFORMATION
DS3297 - 2.1
SL560
300MHz LOW NOISE AMPLIFIER
This monolithic circuit contains three very high performance
transistors and associated biasing components in an eightlead TO-5 package forming a 300MHz low noise amplifier. The
configuration employed permits maximum flexibility with
minimum use of external components. The SL560C is a
general purpose low noise, high frequency gain block.
The device is also available as the SL560AC which has
guaranteed operation over the fully Military Temperatures
Range and is screened to MIL-STD-883 Class B. Data is
available separately.
INPUT
50 APPLICATIONS
INPUT
COMMON BASE
CONFIGURATION
GROUND
8
7
INPUT
COMMON EMITTER
CONFIGURATION
1
SL560
6
5
2
OUTPUT CURRENT SET
3
4
OUTPUT
GAIN SET
Vcc
FEATURES
■
■
■
■
■
Bottom view
Gain up to 40dB
Noise Figures less than 2dB (Rs 200 ohm)
Bandwidth 300MHz
GROUND
1
OUTPUT CURRENT SET
2
OUTPUT
3
Vcc
4
Supply Voltage 2-15V (Depending on Configuration)
SL
560
CM8
8
INPUT 50 OHMS APPLICATIONS
7
INPUT COMMON BASE
6
INPUT COMMON EMITTER
5
GAIN SET
Low Power Consumption
Top view
APPLICATIONS
■ Radar IF Preamplifiers
■
■
■
■
■
■
■
■
DP8
Fig.1 Pin connections
Infra-Red Sysems Head Amplifiers
Amplifiers in Noise Measurement Systems
Low Power Wideband Amplifiers
GAIN SET
Vcc
3
OUTPUT
5
Instrumentation Preamplifiers
10k
50 ohm Line Drivers
INPUT
(COMMON EMITTER
CONFIGURATION)
Wideband Power Amplifiers
INPUT
(COMMON BASE
CONFIGURATION)
Wideband Dynamic Range IF Amplifiers
TR2
TR3
7
10k
INPUT
(50 APPLICATIONS)
240
TR1
6
Aerial Preamplifiers
30
500
1k
200
2 OUTPUT CURRENT
SET
8
2k
ABSOLUTE MAXIMUM RATINGS
Supply voltage
Storage temperature
SL560C DP
SL560C CM
Junction temperature
SL560C DP
SL560C CM
Operating temperature range
SL560C DP
SL560C CM
Thermal resistance
Chip-to-ambient
SL560C CM
SL560C DP
Chip-to-case
SL560C CM
SL560C DP
4
560
1
+15V
-55°C to +150°C
-65°C to +150°C
+150°C
+175°C
-30°C to +85°C
-55°C to +125°C
225°C/W
111°C/W
65°C/W
71°C/W
Fig.2 SL560C circuit diagram
ORDERING INFORMATION
SL560 C CM
SL560 C DP
5962-90520 (SMD)
GROUND
SL560
SUPPLY DECOUPLING
CAPACITOR
5
+VCC
6
7
4
8
3
2
1
I/P
GROUND
O/P
SUBVIS/BNC
SOCKET
LINK
Fig.3 PC layout for 50Ω line driver (see Fig.6)
SL560
ELECTRICAL CHARACTERISTICS
These characteristics are guaranteed over the following conditions (unless otherwise stated)
Frequency = 30MHz; VCC=6V; RS = RL =50Ω; TAMB=22°C ± 2°C; Test Circuit: Fig.6
Characteristic
Small signal voltage gain
Gain flatness
Upper cut-off frequency
Output swing
Min.
Typ.
Max.
Units
11
14
±1.5
250
+7
+11
1.8
3.5
20
17
dB
dB
MHz
dBm
dBm
dB
dB
mA
+5
Noise figure (common emitter)
Supply current
30
Conditions
10MHz - 220MHz
VCC6V
VCC = 9V
RS = 200Ω
RS = 50Ω
CIRCUIT DESCRIPTION
Three high performance transistors of identical geometry
are employed. Advanced design and processing techniques
enable these devices to combine a low base resistance (Rbb')
of 17Ω (for low noise operation) with a small physical size giving a transition frequency, fT, in excess of 1GHz.
The input transistor (TR1) is normally operating in common
base, giving a well defined low input impedance. The full
voltage gain is produced by this transistor and the output
voltage produced at its collector buffered by the two emitter
followers (TR2 and TR3). To obtain maximum bandwidth the
capacitance at the collector of TR1 must be minimised. Hence,
to avoid bonding pad and can capacitances, this point is not
brought out of the package. The collector load resistance of
TR1 is split, the tapping being accessible via pin 5. If required,
an external roll-off capacitor can be fixed to this point.
The large number of circuit nodes accessible from the
outside of the packages affords great flexibility, enabling the
operating current and circuit configuration to be optimised for
any application. In particular, the input transistor (TR1) can be
operated in common emitter mode by decoupling pin 7 and
using 6 as the input. In this configuration, a 2dB noise figure
(RS = 200Ω) can be achieved. This configuration can give a
gain of 35dB with a bandwidth of 300MHz (see figs. 10 and 11).
Because the transistors used in the SL560C exhibit a high
value of fT, care must be taken to avoid high frequency
instability. Capacitors of small physical size should be used,
the leads of which must be short as possible to avoid oscillation
brought about by stray inductance. The use of a ground plane
is recommended.
15
12
TA = +25°C
VCC = 6V
POUT = (a) +5dBm
(b) 0dBm
(b)
5
POUT (dBm)
GAIN (dB)
10
10
8
6
4
(a)
2
0
10
30
50
100
200
300
FREQUENCY (MHz)
Fig.4 Frequency response, small signal gain is of a
typical device
(b)
0
10
TA = +25°C
VCC = a) 6V
(b) 9V
30
100
FREQUENCY (MHz)
(a)
200
300
Fig.5. Frequency response, output capability (loci of maximum
output power with frequency for 1dB gain compression (typical)
SL560
TYPICAL APPLICATIONS
+6V
1.8
50
OUTPUT
TA = +25°C
VCC = (a) 3V
(b) 6V
(c) 9V
10n
1.6
5
6
1
8
10n
7
10n
INPUT
INPUT VSWR
4
3
2
(a)
1.4
(b)
1.2
(c)
Gain 14dB
Bandwidth 220MHz (POUT = 1mW, 50Ω)
200MHz (POUT = 5mW, 50Ω)
Input SWR 1.5:1
Fig.6 50Ω lin driver. The response of this configuration is
shown in Fig.4
10
100 200
400
300
FREQUENCY (MHz)
Fig.7 Input standing wave ratio plot of circuit shown
in Fig.6 (typical)
V
CC
10n
OUTPUT
3
4
5
2
10n
6
1
INPUT
40
7
8
35
30
10k
0V
Voltage gain 32dB at 6V
35dB at 10V
Noise figure 1.8dB (Rs = 200Ω)
Supply current 6mA at 6V
12mA at 10V
Bandwidth 75MHz (see Fig.9)
Fig.8 Low Noise preamplifier
GAIN (dB)
10n
25
20
15
10
5
0
10
20 30
50 100
200300 500
FREQUENCY (MHz)
1000
Fig.9 Frequency response of circuit shown in Fig.8 (typical)
1n
470
15
VCC
1n
(b)
3
4
5
2
10n
6
1
8
7
INPUT
1n
27p
15
56p
15
GAIN (dB)
OUTPUT
(a)
10
TA = +25°C
VCC = (a) 6V
(b) 9V
5
0V
Gain 13dB at Vcc = 9V
-1dB at 6MHz and 300MHz
Fig.10 Wide bandwidth amplifier
10
100 200 300 400
FREQUENCY (MHz)
Fig.11 Frequency response of circuit shown in Fig.10 (typical)
SL560
0.1
µ
0.1µ
1n
47µ
OUTPUT
3
4
5
2
3
6
1
8
4
5
2
7
3
6
1
1n
8
4
5
2
7
6
1
8
INPUT
7
1n
1n
Fig.12 Three-stage directly-coupled high gain low noise amplifier
+2V
10n
OUTPUT
60
GAIN (dB)
(b)
3
(c)
TA = +25°C
VCC = (a) 4V
(b) 6V
(c) 9V
20
10n
8
INPUT
7
(a)
10n
0V
20
0
5
6
1
40
4
2
50 70 100
FREQUENCY (MHz)
Gain 13dB
Power supply current 3mA
Bandwidth 125MHz
Noise figure 2.5dB (Rs = 200Ω)
200 300
Fig.13 Frequency response of circuit shown in Fig.12
(typical)
Fig.14 Low power consumption amplifier
DISSIPATION (mW)
700
600
500
400
300
TO5
200
100
DIP
40 50 60 70 80
90 100 110 120 130 140 150
TEMPERATURE (°C)
Fig.15 Ambient operating temperature V. degrees centigrade
(typical)
SL560
HEADQUARTERS OPERATIONS
GEC PLESSEY SEMICONDUCTORS
Cheney Manor, Swindon,
Wiltshire SN2 2QW, United Kingdom.
Tel: (0793) 518000
Fax: (0793) 518411
GEC PLESSEY SEMICONDUCTORS
P.O. Box 660017
1500 Green Hills Road,
Scotts Valley, California 95067-0017,
United States of America.
Tel: (408) 438 2900
Fax: (408) 438 5576
CUSTOMER SERVICE CENTRES
• FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax : (1) 64 46 06 07
• GERMANY Munich Tel: (089) 3609 06-0 Fax : (089) 3609 06-55
• ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993
• JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510
• NORTH AMERICA Scotts Valley, USA Tel (408) 438 2900 Fax: (408) 438 7023.
• SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872
• SWEDEN Stockholm, Tel: 46 8 702 97 70 Fax: 46 8 640 47 36
• UK, EIRE, DENMARK, FINLAND & NORWAY
Swindon Tel: (0793) 518510 Fax : (0793) 518582
These are supported by Agents and Distributors in major countries world-wide.
 GEC Plessey Semiconductors 1994
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as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior knowledge the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute
any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information
and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
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of any order or contract nor to be regarded as a representation relating to the products or services concerned. The products, their specifications, services and other
information appearing in this publication are subject to change by Zarlink without notice. No warranty or guarantee express or implied is made regarding the capability,
performance or suitability of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any
equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. Manufacturing does not necessarily
include testing of all functions or parameters. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to Zarlink’s conditions of sale which are available on request.
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