ZVN2120A ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 0 0 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 0 0 4 0.5A 0.1A 0 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) ID= 1.0A 8 4 4 6 8 10 VDS= 25V 1.6 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C ID 180 mA Pulsed Drain Current I DM 2 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 1.0 10V 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 200 Gate-Source Threshold Voltage V GS(th) 1 ID= 1.0A 0.5A 0.1A 10 1 1 2 3 4 5 6 7 8 9 10 Normalised RDS(on) and VGS(th) 2.4 20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.2 2.0 1.8 1.6 rc ou -S in a Dr 1.4 1.2 ce an ist es R e 1.0 Gate Th reshold Voltage 0.8 0.6 -40 -20 0 VGS=10V ID=250mA VGS=VDS ID=1mA VGS(TH) 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 3-369 UNIT CONDITIONS. V I D=1mA, V GS=0V V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200V, V GS=0 V DS=160V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25V, V GS=10V 10 Ω V GS=10V,I D=250mA mS V DS=25V,I D=250mA Forward Transconductance (1)(2) ) on S( RD MAX. 3 500 Static Drain-Source On-State R DS(on) Resistance (1) 100 S 1.4 VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) 2 Saturation Characteristics 12 2 3V 0.2 VDS - Drain Source Voltage (Volts) 16 D G 4V 0.6 Output Characteristics 0 8V 7V 6V 5V 1.0 VDS - Drain Source Voltage (Volts) 20 ZVN2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)= 10Ω TYPICAL CHARACTERISTICS 2.0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET g fs 100 Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 12 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-368 ( 3 ZVN2120A ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 0 0 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 0 0 4 0.5A 0.1A 0 6 8 10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) ID= 1.0A 8 4 4 6 8 10 VDS= 25V 1.6 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb=25°C ID 180 mA Pulsed Drain Current I DM 2 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.2 1.0 10V 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 200 Gate-Source Threshold Voltage V GS(th) 1 ID= 1.0A 0.5A 0.1A 10 1 1 2 3 4 5 6 7 8 9 10 Normalised RDS(on) and VGS(th) 2.4 20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.2 2.0 1.8 1.6 rc ou -S in a Dr 1.4 1.2 ce an ist es R e 1.0 Gate Th reshold Voltage 0.8 0.6 -40 -20 0 VGS=10V ID=250mA VGS=VDS ID=1mA VGS(TH) 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 3-369 UNIT CONDITIONS. V I D=1mA, V GS=0V V ID=1mA, V DS= V GS Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200V, V GS=0 V DS=160V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25V, V GS=10V 10 Ω V GS=10V,I D=250mA mS V DS=25V,I D=250mA Forward Transconductance (1)(2) ) on S( RD MAX. 3 500 Static Drain-Source On-State R DS(on) Resistance (1) 100 S 1.4 VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) 2 Saturation Characteristics 12 2 3V 0.2 VDS - Drain Source Voltage (Volts) 16 D G 4V 0.6 Output Characteristics 0 8V 7V 6V 5V 1.0 VDS - Drain Source Voltage (Volts) 20 ZVN2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)= 10Ω TYPICAL CHARACTERISTICS 2.0 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET g fs 100 Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 12 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-368 ( 3 ZVN2120A TYPICAL CHARACTERISTICS 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 500 400 300 VDS=25V 200 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 400 VDS=25V 300 200 100 0 1.8 2.0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) ID(on)- Drain Current (Amps) Transconductance v drain current Transconductance v gate-source voltage C-Capacitance (pF) 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) 16 100 14 12 100V 10 150V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) VDS-Drain Source Voltage (Volts) Gate charge v gate-source voltage Capacitance v drain-source voltage 3-370 VDS= 50V ID=700mA