ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits. SOT89 SOT223 and SOT23-6 versions are also available. FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • Complementary N-channel Type ZVN4525Z • SOT89 package • Earth Recall and dialling switches • Electronic hook switches • High Voltage Power MOSFET Drivers • Telecom call routers • Solid state relays G Top View ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZVP4525ZTA 7 8mm embossed 1000 units ZVP4525ZTC 13 8mm embossed 4000 units DEVICE MARKING • S D D APPLICATIONS P52 ISSUE 1 - MARCH 2001 1 ZVP4525Z ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT UNIT 250 V Gate Source Voltage V GS ±40 V Continuous Drain Current (V GS =10V; TA=25°C)(a) (V GS =10V; TA=70°C)(a) ID ID -205 -164 mA mA Pulsed Drain Current (c) I DM -1 A Continuous Source Current (Body Diode) IS -0.75 A Pulsed Source Current (Body Diode) I SM -1 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.2 9.6 W mW/°C Operating and Storage Temperature Range T j : T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θ JA 103 °C/W Junction to Ambient (b) R θ JA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. ISSUE 1 - MARCH 2001 2 ZVP4525Z CHARACTERISTICS ISSUE 1 - MARCH 2001 3 ZVP4525Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =-1mA, V GS =0V Zero Gate Voltage Drain Current I DSS -30 -500 nA V DS =-250V, V GS =0V Gate-Body Leakage I GSS ±1 ±100 nA Gate-Source Threshold Voltage V GS(th) -1.5 -2.0 V I =-1mA, V DS = V GS Static Drain-Source On-State Resistance (1) R DS(on) 10 13 14 18 Ω Ω V GS =-10V, I D =-200mA V GS =-3.5V, I D =-100mA Forward Transconductance (3) g fs 200 mS V DS =-10V,I D =-0.15A -250 -0.8 80 -285 V GS =±40V, V DS =0V D DYNAMIC (3) Input Capacitance C iss 73 pF Output Capacitance C oss 12.8 pF Reverse Transfer Capacitance C rss 3.91 pF Turn-On Delay Time t d(on) 1.53 ns Rise Time tr 3.78 ns Turn-Off Delay Time t d(off) 17.5 ns Fall Time tf 7.85 ns Total Gate Charge Qg 2.45 3.45 nC Gate-Source Charge Q gs 0.22 0.31 nC Gate Drain Charge Q gd 0.45 0.63 nC 0.97 V T j =25°C, I S =-200mA, V GS =0V T j =25°C, I F =-200mA, di/dt=100A/µs V DS =-25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-30V, I D =-200mA R G =50Ω, V GS =-10V (refer to test circuit) V DS =-25V,V GS =-10V, I D =-200mA(refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD Reverse Recovery Time (3) t rr 205 290 ns Reverse Recovery Charge (3) Q rr 21 29 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2001 4 ZVP4525Z TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 5 ZVP4525Z CHARACTERISTICS ISSUE 1 - MARCH 2001 6 TEST CIRCUITS ISSUE 1 - MARCH 2001 7 ZVP4525Z ZVP4525Z PAD LAYOUT DETAILS PACKAGE DIMENSIONS DIM Millimetres 2.4 Inches Min Max Min Max A 4.40 4.60 0.173 0.181 B 3.75 4.25 0.150 0.167 C 1.40 1.60 0.550 0.630 D - 2.60 - 0.102 F 0.28 0.45 G 0.38 0.55 0.015 0.022 H 1.50 1.80 0.060 0.072 K 2.60 2.85 0.102 0.112 L 2.90 3.10 0.114 0.122 N 1.40 1.60 0.055 0.063 0.011 4.0 0.018 1.5 1.2 1.0 3.2 1.2 SOT89 pattern. Minimum Pad Size (dimensions in mm) A H C K D B G F N L Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 www.zetex.com Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - MARCH 2001 8