ZETEX ZXMP3A16G

ZXMP3A16G
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
· DC-DC converters
· Power management functions
· Relay and soleniod driving
PINOUT
· Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16GTA
7”
12mm
1000 units
ZXMP3A16GTC
13”
12mm
4000 units
Top View
DEVICE MARKING
· ZXMP
3A16
ISSUE 2 - JULY 2004
1
ZXMP3A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current (V GS = -10V; T A =25°C)(b)
(V GS = -10V; T A =70°C)(b)
(V GS = -10V; T A =25°C)(a)
ID
-7.5
-6.0
-5.4
A
Pulsed Drain Current (c)
I DM
-24.9
A
Continuous Source Current (Body Diode) (b)
IS
-3.2
A
Pulsed Source Current (Body Diode)(c)
I SM
-24.9
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
2.0
16
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
62.5
°C/W
Junction to Ambient (b)
R θJA
32.2
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 2 - JULY 2004
2
ZXMP3A16G
TYPICAL CHARACTERISTICS
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on)
10 Limited
1
DC
1s
100m
10m
100ms
10ms
Single Pulse
Tamb=25°C
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
Safe Operating Area
60
Tamb=25°C
MaximumPower (W)
Thermal Resistance (°C/W)
70
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ 1m
D=0.1
10m 100m
1
10
100
Single Pulse
Tamb=25°C
100
10
1
100µ 1m
1k
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2004
3
1k
ZXMP3A16G
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
9.2
Input Capacitance
C iss
970
pF
Output Capacitance
C oss
169
pF
Reverse Transfer Capacitance
C rss
116
pF
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
tr
6.1
ns
Turn-Off Delay Time
t d(off)
35
ns
Fall Time
tf
19
ns
Gate Charge
Qg
12.9
nC
Total Gate Charge
Qg
24.9
nC
Gate-Source Charge
Q gs
2.67
nC
Gate-Drain Charge
Q gd
3.86
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
21.2
ns
Reverse Recovery Charge (3)
Q rr
18.7
nC
STATIC
V
I D =-250µA, V GS =0V
-1
␮A
V DS =-30V, V GS =0V
100
nA
-1.0
V
V GS =⫾20V, V DS =0V
I =-250␮A, V DS = V GS
D
0.045 ⍀
0.070 ⍀
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
S
V DS =-15V,I D =-4.2A
DYNAMIC (3)
V DS =-15V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-1A
R G =6.0⍀, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
-0.95 V
T J =25⬚C, I S =-3.6A,
V GS =0V
T J =25⬚C, I F =-2A,
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Width ⱕ300µ s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2004
4
ZXMP3A16G
TYPICAL CHARACTERISTICS
-ID Drain Current (A)
4V
T = 150°C
3.5V
3V
2.5V
10
-ID Drain Current (A)
10V
T = 25°C
2V
1
-VGS
0.1
1.5V
0.01
0.1
1
4V
3.5V
3V
2.5V
2V
1
1.5V
-VGS
0.1
0.01
10
10V
10
-VDS Drain-Source Voltage (V)
0.1
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
T = 150°C
T = 25°C
1
-VDS = 10V
0.1
1
2
VGS = -10V
ID = -4.2A
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
3
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
100
1.5V
100
-VGS
2V
10
2.5V
3V
1
3.5V
4V
0.1
10V
0.01
0.01
0.1
1
T = 150°C
10
0.1
0.010.0
10
-ID Drain Current (A)
On-Resistance v Drain Current
T = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ISSUE 2 - JULY 2004
5
ZXMP3A16G
CHARACTERISTICS
C Capacitance (pF)
VGS = 0V
f = 1MHz
1200
1000
CISS
800
COSS
600
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
-VGS Gate-Source Voltage (V)
10
1400
Capacitance v Drain-Source Voltage
-ID = 4.2A
8
6
4
2
-VDS = 15V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Current
Regulator
Same as
D.U.T
50k
QG
12V
0.2µF
-10V
0.3µF
QGS
VDS
QGD
IG
D.U.T
VG
VGS
ID
Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
RD
VGS
10%
VGS
VDS
RG
90%
VDS
-10V
td(on)
tr
td(off)
Vcc
Pulse Width < 1µS
Duty Factor £ 0.1%
tf
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 2 - JULY 2004
6
ZXMP3A16G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2004
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United Kingdom
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Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
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Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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ISSUE 2 - JULY 2004
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