ZOWIE GBJ25B

GBJ25A THRU GBJ25M
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
TED
N
E
T
A
P
GBJ
1.193(30.3)
.165(4.2)
.096(2.3)
.094(2.4)
.078(2.0)
* Internal Constructure with GPRC (Glass Passivated Rectifier Chip)
inside
* High Case Dielectric Strength of 1500VRMS
* Low Reverse Leakage Current
* High Surge Current Capability
* Ideal for Printed Circuit Board Applications
* Plastic Material-UL Recognition Flammability
Classification 94V-0
.134 (3.4)
.122 (3.1)
.425 (10.8)
.697(17.7)
.150(3.8)
.134(3.4)
.114(2.9)
.098(2.5)
.669(17.0)
~ -
.150(3.8)
~
.800(20.3)
.119 (0.5)
+
.441 (11.2)
.189(4.80)
6 SCREW
.106(2.7)
FEATURES
.203(5.16)
1.169(29.7)
.708(18.0)
HOLE FOR NO.
Forward Current - 25.0 Amperes
.043(1.1)
.031(0.8)
.035(0.9)
.402
.303
.303
.386
(10.2)
.287
(7.7)
.287
(7.7)
(9.8)
(7.3)
(7.3)
.023(0.6)
MECHANICAL DATA
*Dimensions in inches and (millimeters)
Case : GBJ molded plastic
Terminals : Plated Leads, solderable per MIL-STD-750,
Method 2026
Polarity : Molded on body
Mounting : Through Hole for # 6 screw
Mounting torque : 5.0 in-lbs maximum
Weight : 6.6 grams
SuperBridge with GPRC inside
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature
SYMBOLS GBJ25A GBJ25B GBJ25D GBJ25G GBJ25J GBJ25K GBJ25M UNITS
unless otherwise specified.
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
VDC
50
100
200
400
600
800
1000
Volts
Maximum DC blocking voltage
Maximum average forward (with heatsink Note 2) rectified
o
I (AV)
25
Amps
IFSM
350
Amps
VF
1.05
Volts
current at TC=100 C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @ IF=12.5 A
o
Maximum DC reverse current
@TC=25 C
at rated DC blocking voltage
@TC=125 C
10
IR
o
500
uA
2
I2t rating for fusing ( t < 8.3ms )
I2t
510
A s
Typical junction capacitance per element (NOTE 1)
CJ
85
pF
0.6
K/W
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
R
JC
TJ,TSTG
-55 to +175
o
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
(2) Device mounted on 300 x 300 x 1.6mm Cu Plate Heatsink.
06/2003
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES GBJ25A THRU GBJ25M
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
350
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
25
20
15
10
5
Resistive or Inductive Load
Single half-sine-wave
(JEDEC Method)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
1
175
10
CASE TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100
NUMBER OF CYCLES AT 60Hz
o
10
1.0
0.1
o
TJ=125 C
100
o
TJ=100 C
10
o
TJ=50 C
1.0
o
TJ=25 C
PULSE WIDTH=300uS
0.01
0.1
0
0.4
0.8
1.2
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0
2.0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
100
o
TJ = 25 C
10
1.0
1.0
10
100
REVERSE VOLTAGE, VOLTS
06/2003
Zowie Technology Corporation