GBJ25A THRU GBJ25M SINTERED GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts TED N E T A P GBJ 1.193(30.3) .165(4.2) .096(2.3) .094(2.4) .078(2.0) * Internal Constructure with GPRC (Glass Passivated Rectifier Chip) inside * High Case Dielectric Strength of 1500VRMS * Low Reverse Leakage Current * High Surge Current Capability * Ideal for Printed Circuit Board Applications * Plastic Material-UL Recognition Flammability Classification 94V-0 .134 (3.4) .122 (3.1) .425 (10.8) .697(17.7) .150(3.8) .134(3.4) .114(2.9) .098(2.5) .669(17.0) ~ - .150(3.8) ~ .800(20.3) .119 (0.5) + .441 (11.2) .189(4.80) 6 SCREW .106(2.7) FEATURES .203(5.16) 1.169(29.7) .708(18.0) HOLE FOR NO. Forward Current - 25.0 Amperes .043(1.1) .031(0.8) .035(0.9) .402 .303 .303 .386 (10.2) .287 (7.7) .287 (7.7) (9.8) (7.3) (7.3) .023(0.6) MECHANICAL DATA *Dimensions in inches and (millimeters) Case : GBJ molded plastic Terminals : Plated Leads, solderable per MIL-STD-750, Method 2026 Polarity : Molded on body Mounting : Through Hole for # 6 screw Mounting torque : 5.0 in-lbs maximum Weight : 6.6 grams SuperBridge with GPRC inside TM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature SYMBOLS GBJ25A GBJ25B GBJ25D GBJ25G GBJ25J GBJ25K GBJ25M UNITS unless otherwise specified. Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts Maximum DC blocking voltage Maximum average forward (with heatsink Note 2) rectified o I (AV) 25 Amps IFSM 350 Amps VF 1.05 Volts current at TC=100 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage @ IF=12.5 A o Maximum DC reverse current @TC=25 C at rated DC blocking voltage @TC=125 C 10 IR o 500 uA 2 I2t rating for fusing ( t < 8.3ms ) I2t 510 A s Typical junction capacitance per element (NOTE 1) CJ 85 pF 0.6 K/W Typical thermal resistance (NOTE 2) Operating junction and storage temperature range R JC TJ,TSTG -55 to +175 o C NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. (2) Device mounted on 300 x 300 x 1.6mm Cu Plate Heatsink. 06/2003 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES GBJ25A THRU GBJ25M FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 350 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 25 20 15 10 5 Resistive or Inductive Load Single half-sine-wave (JEDEC Method) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 1 175 10 CASE TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 NUMBER OF CYCLES AT 60Hz o 10 1.0 0.1 o TJ=125 C 100 o TJ=100 C 10 o TJ=50 C 1.0 o TJ=25 C PULSE WIDTH=300uS 0.01 0.1 0 0.4 0.8 1.2 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 2.0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 100 o TJ = 25 C 10 1.0 1.0 10 100 REVERSE VOLTAGE, VOLTS 06/2003 Zowie Technology Corporation